Abstract: A semiconductor microcooler is fabricated by forming fins in a semiconductor substrate and forming a metal layer upon the fins. A stacked microcooler may be formed by stacking a plurality of semiconductor microcoolers. The microcoolers may be positioned such that the fins of each microcooler are aligned. One or more microcoolers may be thermally connected to a surface of a coolant conduit that is thermally connected to an electronic device heat generating device, such as an integrated circuit (IC) chip, or the like. Heat from the electronic device heat generating device may transfer to the one or more microcoolers. A flow of cooled liquid may be introduced through the conduit and heat from the one or more microcoolers may transfer to the liquid coolant.

Abstract: Techniques that facilitate a copper microcooler structure are provided. In one example, a device includes a first copper microcooler structure and a second copper microcooler structure. The first copper microcooler structure includes a first copper plate and a first set of copper channels attached to the first copper plate. The second copper microcooler structure includes a second copper plate and a second set of copper channels attached to the second copper plate. A surface of the second copper plate associated with the second copper microcooler structure is bonded to one or more surfaces of the first set of copper channels associated with the first copper microcooler structure via a fusion bond.

Abstract: Techniques that facilitate a copper microcooler structure are provided. In one example, a device includes a first copper microcooler structure and a second copper microcooler structure. The first copper microcooler structure includes a first copper plate and a first set of copper channels attached to the first copper plate. The second copper microcooler structure includes a second copper plate and a second set of copper channels attached to the second copper plate. A surface of the second copper plate associated with the second copper microcooler structure is bonded to one or more surfaces of the first set of copper channels associated with the first copper microcooler structure via a fusion bond.

Abstract: An embodiment of the invention may include a semiconductor structure for ensuring semiconductor design integrity. The semiconductor structure may include an electrical circuit necessary for the operation of the semiconductor circuit and white space having no electrical circuit. The semiconductor structure may include an optical pattern used for validating the semiconductor circuit design formed in the white space of the electrical circuit. In an embodiment of the invention, the optical pattern may include one or more deposition layers. In an embodiment of the invention, the optical pattern may include covershapes. In an embodiment of the invention, the optical pattern may be physically isolated from the electrical circuit. The optical pattern may include a Moiré pattern.

Abstract: An embodiment of the invention may include a method for ensuring semiconductor design integrity. The method may include analyzing a photomask design for a semiconductor circuit. The photomask may include an electrical design necessary for the operation of the semiconductor circuit, and white space, which has no electrical design. The method may include inserting an optical design into the white space of the photomask design for the semiconductor circuit. The optical design may have known optical patterns for validating the semiconductor circuit design. In an embodiment of the invention, the optical design may be physically isolated from the electrical design. In another embodiment of the invention, the optical design may comprise one or more photomask layers and overlay the electrical design. In another embodiment of the invention, the optical design may comprise covershapes.

Abstract: A lithographic patterning method includes forming a multi-layer patterning material film stack on a semiconductor substrate, the patterning material film stack including a resist layer formed over one or more additional layers, and forming a metal-containing top coat over the resist layer. The method further includes exposing the multi-layer patterning material film stack to patterning radiation through the metal-containing top coat to form a desired pattern in the resist layer, removing the metal-containing top coat, developing the pattern formed in the resist layer, etching at least one underlying layer in accordance with the developed pattern, and removing remaining portions of the resist layer. The metal-containing top coat can be formed, for example, by atomic layer deposition or spin-on deposition over the resist layer, or by self-segregation from the resist layer.

Abstract: A semiconductor structure includes a semiconductor substrate and a multi-layer patterning material film stack formed on the semiconductor substrate. The patterning material film stack includes a resist layer formed over one or more additional layers. The semiconductor structure further includes a metal-containing top coat formed over the resist layer. The metal-containing top coat can be formed, for example, by atomic layer deposition or spin-on deposition over the resist layer, or by self-segregation from the resist layer.

Abstract: A lithographic patterning method includes forming a multi-layer patterning material film stack on a semiconductor substrate, the patterning material film stack including a resist layer formed over one or more additional layers, and forming a metal-containing top coat over the resist layer. The method further includes exposing the multi-layer patterning material film stack to patterning radiation through the metal-containing top coat to form a desired pattern in the resist layer, removing the metal-containing top coat, developing the pattern formed in the resist layer, etching at least one underlying layer in accordance with the developed pattern, and removing remaining portions of the resist layer. The metal-containing top coat can be formed, for example, by atomic layer deposition or spin-on deposition over the resist layer, or by self-segregation from the resist layer.

Abstract: A lithographic patterning method includes forming a multi-layer patterning material film stack on a semiconductor substrate, the patterning material film stack including a resist layer formed over one or more additional layers, and forming a metal-containing top coat over the resist layer. The method further includes exposing the multi-layer patterning material film stack to patterning radiation through the metal-containing top coat to form a desired pattern in the resist layer, removing the metal-containing top coat, developing the pattern formed in the resist layer, etching at least one underlying layer in accordance with the developed pattern, and removing remaining portions of the resist layer. The metal-containing top coat can be formed, for example, by atomic layer deposition or spin-on deposition over the resist layer, or by self-segregation from the resist layer.

Abstract: An embodiment of the invention may include a method for ensuring semiconductor design integrity. The method may include analyzing a photomask design for a semiconductor circuit. The photomask may include an electrical design necessary for the operation of the semiconductor circuit, and white space, which has no electrical design. The method may include inserting an optical design into the white space of the photomask design for the semiconductor circuit. The optical design may have known optical patterns for validating the semiconductor circuit design. In an embodiment of the invention, the optical design may be physically isolated from the electrical design. In another embodiment of the invention, the optical design may comprise one or more photomask layers and overlay the electrical design. In another embodiment of the invention, the optical design may comprise covershapes.

Abstract: An embodiment of the invention may include a method for ensuring semiconductor design integrity. The method may include analyzing a photomask design for a semiconductor circuit. The photomask may include a primary electrical design necessary for the operation of the semiconductor circuit, and white space, which has no primary electrical design. The method may include inserting a secondary electrical design into the white space of the photomask design for the semiconductor circuit. The secondary electrical design may have known electrical properties for validating the semiconductor circuit design.

Abstract: Embodiments are directed to a method and system for determining effective dose of a lithography tool. The method includes performing a series of open frame exposures with the lithography tool on a substrate to produce a set of controlled exposure dose blocks in resist, and then baking and developing the exposed substrate. The method further includes scanning the resultant open frame images with oblique light and capturing the light scattered from the substrate surface. The method further includes creating a haze map from the background signal of the scattered light data, converting the haze map to a graphical image file, and analyzing the graphical image file to determine effective dose of the lithography tool, wherein a brightness of the graphical image file is related to effective dose of the lithography tool.

Abstract: Embodiments are directed to a method and system for determining effective dose of a lithography tool. The method includes performing a series of open frame exposures with the lithography tool on a substrate to produce a set of controlled exposure dose blocks in resist, and then baking and developing the exposed substrate. The method further includes scanning the resultant open frame images with oblique light and capturing the light scattered from the substrate surface. The method further includes creating a haze map from the background signal of the scattered light data, converting the haze map to a graphical image file, and analyzing the graphical image file to determine effective dose of the lithography tool, wherein a brightness of the graphical image file is related to effective dose of the lithography tool.

Abstract: Embodiments are directed to a method and system for determining effective dose of a lithography tool. The method includes performing a series of open frame exposures with the lithography tool on a substrate to produce a set of controlled exposure dose blocks in resist, and then baking and developing the exposed substrate. The method further includes scanning the resultant open frame images with oblique light and capturing the light scattered from the substrate surface. The method further includes creating a haze map from the background signal of the scattered light data, converting the haze map to a graphical image file, and analyzing the graphical image file to determine effective dose of the lithography tool, wherein a brightness of the graphical image file is related to effective dose of the lithography tool.

Abstract: Embodiments are directed to a method and system for determining effective dose of a lithography tool. The method includes performing a series of open frame exposures with the lithography tool on a substrate to produce a set of controlled exposure dose blocks in resist, and then baking and developing the exposed substrate. The method further includes scanning the resultant open frame images with oblique light and capturing the light scattered from the substrate surface. The method further includes creating a haze map from the background signal of the scattered light data, converting the haze map to a graphical image file, and analyzing the graphical image file to determine effective dose of the lithography tool, wherein a brightness of the graphical image file is related to effective dose of the lithography tool.

Abstract: An electrical field is applied through an extreme ultraviolet (EUV) photoresist layer along a direction perpendicular to an interface between the EUV photoresist layer and an underlying layer. Secondary electrons and thermal electrons are accelerated along the direction of the electrical field, and travel with directionality before interacting with the photoresist material for a chemical reaction. The directionality increases the efficiency of electron photoacid capture, reducing the required EUV dose for exposure. Furthermore, this directionality reduces lateral diffusion of the secondary and thermal electrons, and thereby reduces blurring of the image and improves the image resolution of feature edges formed in the EUV photoresist layer. The electrical field may be generated by applying a direct current (DC) and/or alternating current (AC) bias voltage across an electrostatic chuck and a conductive plate placed over the EUV photoresist layer with a hole for passing the EUV radiation through.

Abstract: An extreme ultraviolet (EUV) radiation source pellet includes at least one metal particle embedded within a heavy noble gas cluster contained within a noble gas shell cluster. The EUV radiation source assembly can be activated by a sequential irradiation of at least one first laser pulse and at least one second laser pulse. Each first laser pulse generates plasma by detaching outer orbital electrons from the at least one metal particle and releasing the electrons into the heavy noble gas cluster. Each second laser pulse amplifies the plasma embedded in the heavy noble gas cluster triggering a laser-driven self-amplifying process. The amplified plasma induces inter-orbital electron transitions in heavy noble gas and other constitute atoms leading to emission of EUV radiation. The laser pulsing units can be combined with a source pellet generation unit to form an integrated EUV source system.

Abstract: An extreme ultraviolet (EUV) radiation source pellet includes at least one metal particle embedded within a heavy noble gas cluster contained within a noble gas shell cluster. The EUV radiation source assembly can be activated by a sequential irradiation of at least one first laser pulse and at least one second laser pulse. Each first laser pulse generates plasma by detaching outer orbital electrons from the at least one metal particle and releasing the electrons into the heavy noble gas cluster. Each second laser pulse amplifies the plasma embedded in the heavy noble gas cluster triggering a laser-driven self-amplifying process. The amplified plasma induces inter-orbital electron transitions in heavy noble gas and other constitute atoms leading to emission of EUV radiation. The laser pulsing units can be combined with a source pellet generation unit to form an integrated EUV source system.

Abstract: An extreme ultraviolet (EUV) radiation source pellet includes at least one metal particle embedded within a heavy noble gas cluster contained within a noble gas shell cluster. The EUV radiation source assembly can be activated by a sequential irradiation of at least one first laser pulse and at least one second laser pulse. Each first laser pulse generates plasma by detaching outer orbital electrons from the at least one metal particle and releasing the electrons into the heavy noble gas cluster. Each second laser pulse amplifies the plasma embedded in the heavy noble gas cluster triggering a laser-driven self-amplifying process. The amplified plasma induces inter-orbital electron transitions in heavy noble gas and other constitute atoms leading to emission of EUV radiation. The laser pulsing units can be combined with a source pellet generation unit to form an integrated EUV source system.

Abstract: An extreme ultraviolet (EUV) radiation source pellet includes at least one metal particle embedded within a heavy noble gas cluster contained within a noble gas shell cluster. The EUV radiation source assembly can be activated by a sequential irradiation of at least one first laser pulse and at least one second laser pulse. Each first laser pulse generates plasma by detaching outer orbital electrons from the at least one metal particle and releasing the electrons into the heavy noble gas cluster. Each second laser pulse amplifies the plasma embedded in the heavy noble gas cluster triggering a laser-driven self-amplifying process. The amplified plasma induces inter-orbital electron transitions in heavy noble gas and other constitute atoms leading to emission of EUV radiation. The laser pulsing units can be combined with a source pellet generation unit to form an integrated EUV source system.