Abstract: Circuits and methods for performing search operations in a content addressable memory (CAM) array are provided. A system for searching a CAM includes a circuit that selectively activates a main-search of a two stage CAM search while a pre-search of the two stage CAM search is still active.

Abstract: Disclosed are a memory system and an associated operating method. In the system, a first memory array comprises first memory cells requiring a range of time delays between wordline activating and bitline sensing. A delay signal generator delays an input signal by a selected time delay (i.e., a long time delay corresponding to statistically slow memory cells) and outputs a delay signal for read operation timing to ensure read functionality for statistically slow and faster memory cells. To accomplish this, the delay signal generator comprises a second memory array having second memory cells with the same design as the first memory cells. Transistors within the second memory cells are controlled by a lower gate voltage than transistors within the first memory cells in order to mimic the effect of higher threshold voltages, which result in longer time delays and which can be associated with the statistically slow first memory cells.

Abstract: Disclosed are a memory system and an associated operating method. In the system, a first memory array comprises first memory cells requiring a range of time delays between wordline activating and bitline sensing. A delay signal generator delays an input signal by a selected time delay (i.e., a long time delay corresponding to statistically slow memory cells) and outputs a delay signal for read operation timing to ensure read functionality for statistically slow and faster memory cells. To accomplish this, the delay signal generator comprises a second memory array having second memory cells with the same design as the first memory cells. Transistors within the second memory cells are controlled by a lower gate voltage than transistors within the first memory cells in order to mimic the effect of higher threshold voltages, which result in longer time delays and which can be associated with the statistically slow first memory cells.

Abstract: Circuits and methods for performing search operations in a content addressable memory (CAM) array are provided. A system for searching a CAM includes a circuit that selectively activates a main-search of a two stage CAM search while a pre-search of the two stage CAM search is still active.