Patents by Inventor Daniel A. Koos
Daniel A. Koos has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10216613Abstract: A system debugs software code and performs a method of debugging software code. The method includes starting execution of an instantiation of a process within the software code and determining whether the instantiation of the process corresponds with any entry in a database of reserved process identifiers (PIDs) and thread identifiers (TIDs). The system also includes assigning the PID and the TID from among the reserved PIDs and the TIDs in the database to the instantiation of the process based on the instantiation of the process corresponding with any entry in the database.Type: GrantFiled: November 9, 2016Date of Patent: February 26, 2019Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Kurosh Khan-Afshar Mohammadi, Daniel A. Koo Mo Shan, Geert Oost, Robert W. Thompson
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Publication number: 20180052760Abstract: A system debugs software code and performs a method of debugging software code. The method includes starting execution of an instantiation of a process within the software code and determining whether the instantiation of the process corresponds with any entry in a database of reserved process identifiers (PIDs) and thread identifiers (TIDs). The system also includes assigning the PID and the TID from among the reserved PIDs and the TIDs in the database to the instantiation of the process based on the instantiation of the process corresponding with any entry in the database.Type: ApplicationFiled: November 9, 2016Publication date: February 22, 2018Inventors: Kurosh Khan-Afshar Mohammadi, Daniel A. Koo Mo Shan, Geert Oost, Robert W. Thompson
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Patent number: 8481432Abstract: An etching process for selectively etching exposed metal surfaces of a substrate and forming a conductive capping layer over the metal surfaces is described. In some embodiments, the etching process involves oxidation of the exposed metal to form a metal oxide that is subsequently removed from the surface of the substrate. The exposed metal may be oxidized by using solutions containing oxidizing agents such as peroxides or by using oxidizing gases such as those containing oxygen or ozone. The metal oxide produced is then removed using suitable metal oxide etching agents such as glycine. The oxidation and etching may occur in the same solution. In other embodiments, the exposed metal is directly etched without forming a metal oxide. Suitable direct metal etching agents include any number of acidic solutions. The process allows for controlled oxidation and/or etching with reduced pitting.Type: GrantFiled: May 26, 2011Date of Patent: July 9, 2013Assignee: Novellus Systems, Inc.Inventors: Steven T. Mayer, Daniel A. Koos, Eric Webb
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Publication number: 20110223772Abstract: An etching process for selectively etching exposed metal surfaces of a substrate and forming a conductive capping layer over the metal surfaces is described. In some embodiments, the etching process involves oxidation of the exposed metal to form a metal oxide that is subsequently removed from the surface of the substrate. The exposed metal may be oxidized by using solutions containing oxidizing agents such as peroxides or by using oxidizing gases such as those containing oxygen or ozone. The metal oxide produced is then removed using suitable metal oxide etching agents such as glycine. The oxidation and etching may occur in the same solution. In other embodiments, the exposed metal is directly etched without forming a metal oxide. Suitable direct metal etching agents include any number of acidic solutions. The process allows for controlled oxidation and/or etching with reduced pitting.Type: ApplicationFiled: May 26, 2011Publication date: September 15, 2011Inventors: Steven T. Mayer, Daniel A. Koos, Eric Webb
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Patent number: 7972970Abstract: An etching process for selectively etching exposed metal surfaces of a substrate and forming a conductive capping layer over the metal surfaces is described. In some embodiments, the etching process involves oxidation of the exposed metal to form a metal oxide that is subsequently removed from the surface of the substrate. The exposed metal may be oxidized by using solutions containing oxidizing agents such as peroxides or by using oxidizing gases such as those containing oxygen or ozone. The metal oxide produced is then removed using suitable metal oxide etching agents such as glycine. The oxidation and etching may occur in the same solution. In other embodiments, the exposed metal is directly etched without forming a metal oxide. Suitable direct metal etching agents include any number of acidic solutions. The process allows for controlled oxidation and/or etching with reduced pitting.Type: GrantFiled: July 30, 2007Date of Patent: July 5, 2011Assignee: Novellus Systems, Inc.Inventors: Steven T. Mayer, Daniel A. Koos, Eric Webb
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Publication number: 20090283499Abstract: An etching process for selectively etching exposed metal surfaces of a substrate and forming a conductive capping layer over the metal surfaces is described. In some embodiments, the etching process involves oxidation of the exposed metal to form a metal oxide that is subsequently removed from the surface of the substrate. The exposed metal may be oxidized by using solutions containing oxidizing agents such as peroxides or by using oxidizing gases such as those containing oxygen or ozone. The metal oxide produced is then removed using suitable metal oxide etching agents such as glycine. The oxidation and etching may occur in the same solution. In other embodiments, the exposed metal is directly etched without forming a metal oxide. Suitable direct metal etching agents include any number of acidic solutions. The process allows for controlled oxidation and/or etching with reduced pitting.Type: ApplicationFiled: July 30, 2007Publication date: November 19, 2009Inventors: Steven T. Mayer, Daniel A. Koos, Eric Webb
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Patent number: 7531463Abstract: An etching process for selectively etching exposed metal surfaces of a substrate and forming a conductive capping layer over the metal surfaces is described. In some embodiments, the etching process involves oxidation of the exposed metal to form a metal oxide that is subsequently removed from the surface of the substrate. The exposed metal may be oxidized by using solutions containing oxidizing agents such as peroxides or by using oxidizing gases such as those containing oxygen or ozone. The metal oxide produced is then removed using suitable metal oxide etching agents such as glycine. The oxidation and etching may occur in the same solution. In other embodiments, the exposed metal is directly etched without forming a metal oxide. Suitable direct metal etching agents include any number of acidic solutions. The process allows for controlled oxidation and/or etching with reduced pitting.Type: GrantFiled: October 24, 2006Date of Patent: May 12, 2009Assignee: Novellus Systems, Inc.Inventors: Daniel A. Koos, Steven T. Mayer, Heung L. Park, Timothy Patrick Cleary, Thomas Mountsier
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Patent number: 7338908Abstract: An etching process for selectively etching exposed metal surfaces of a substrate and forming a conductive capping layer over the metal surfaces is described. In some embodiments, the etching process involves oxidation of the exposed metal to form a metal oxide that is subsequently removed from the surface of the substrate. The exposed metal may be oxidized by using solutions containing oxidizing agents such as peroxides or by using oxidizing gases such as those containing oxygen or ozone. The metal oxide produced is then removed using suitable metal oxide etching agents such as glycine. The oxidation and etching may occur in the same solution. In other embodiments, the exposed metal is directly etched without forming a metal oxide. Suitable direct metal etching agents include any number of acidic solutions. The process allows for controlled oxidation and/or etching with reduced pitting.Type: GrantFiled: October 20, 2003Date of Patent: March 4, 2008Assignee: Novellus Systems, Inc.Inventors: Daniel A. Koos, Steven T. Mayer, Heung L. Park, Timothy Patrick Cleary, Thomas Mountsier
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Publication number: 20070105377Abstract: An etching process for selectively etching exposed metal surfaces of a substrate and forming a conductive capping layer over the metal surfaces is described. In some embodiments, the etching process involves oxidation of the exposed metal to form a metal oxide that is subsequently removed from the surface of the substrate. The exposed metal may be oxidized by using solutions containing oxidizing agents such as peroxides or by using oxidizing gases such as those containing oxygen or ozone. The metal oxide produced is then removed using suitable metal oxide etching agents such as glycine. The oxidation and etching may occur in the same solution. In other embodiments, the exposed metal is directly etched without forming a metal oxide. Suitable direct metal etching agents include any number of acidic solutions. The process allows for controlled oxidation and/or etching with reduced pitting.Type: ApplicationFiled: October 24, 2006Publication date: May 10, 2007Inventors: Daniel Koos, Steven Mayer, Heung Park, Timothy Cleary, Thomas Mountsier
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Publication number: 20010055941Abstract: A method of planarizing a substrate employs two separate chemical mechanical polishing (CMP) steps. In the first CMP step, the substrate is polished using a first CMP slurry solution and a polishing pad. A diluting solution is then applied to the polishing pad to remove slurry of the first CMP step. In the second CMP step, after applying the diluting solution to the polishing pad to remove the first slurry, second CMP slurry solution is applied to the polishing pad to facilitate additional planarization of the substrate. In a particular embodiment of this invention, the diluting solution comprises a buffer solution having a pH level corresponding to a pH level of one of the first or second CMP slurry solution. In accordance with another aspect of this embodiment, a plurality of different diluting solutions are applied to the polishing pad intermediate the respective first and second CMP steps.Type: ApplicationFiled: May 29, 2001Publication date: December 27, 2001Applicant: Micron Technology, Inc.Inventors: Daniel A. Koos, Sung C. Kim, Gurtej S. Sandhu
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Patent number: 6312486Abstract: A slurry composition enhances the removal of polish-resistant surface moieties from the surface of a semiconductor wafer during chemical-mechanical polishing. The slurry composition is a mixture including a solvent, a plurality of abrasive particles, and a chelating agent. The abrasive particles abrade the surface of the wafer to remove surface moieties and underlying material. The chelating agent is selected to react with polish-resistant surface moieties on the surface of the wafer surface, to thereby render the surface moieties easier to remove from the surface layer with substantially non-aggressive chemical-mechanical polishing techniques. In operation, the surface moieties and the underlying bulk material are removed by a combination of the chemical effects of the chelating agent and the mechanical effects of the abrasive particles.Type: GrantFiled: June 27, 2000Date of Patent: November 6, 2001Assignee: Micron Technology, Inc.Inventors: Gurtej Singh Sandhu, Donald Westmoreland, Daniel Koos
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Patent number: 6234877Abstract: A method of planarizing a substrate employs two separate chemical mechanical polishing (CMP) steps. In the first CMP step, the substrate is polished using a first CMP slurry solution and a polishing pad. A diluting solution is then applied to the polishing pad to remove slurry of the first CMP step. In the second CMP step, after applying the diluting solution to the polishing pad to remove the first slurry, second CMP slurry solution is applied to the polishing pad to facilitate additional planarization of the substrate. In a particular embodiment of this invention, the diluting solution comprises a buffer solution having a pH level corresponding to a pH level of one of the first or second CMP slurry solution. In accordance with another aspect of this embodiment, a plurality of different diluting solutions are applied to the polishing pad intermediate the respective first and second CMP steps.Type: GrantFiled: June 7, 2000Date of Patent: May 22, 2001Assignee: Micron Technology, Inc.Inventors: Daniel A. Koos, Sung C. Kim, Gurtej S. Sandhu
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Patent number: 6120354Abstract: A method of planarizing a substrate employs two separate chemical mechanical polishing (CMP) steps. In the first CMP step, the substrate is polished using a first CMP slurry solution and a polishing pad. A diluting solution is then applied to the polishing pad to remove slurry of the first CMP step. In the second CMP step, after applying the diluting solution to the polishing pad to remove the first slurry, second CMP slurry solution is applied to the polishing pad to facilitate additional planarization of the substrate. In a particular embodiment of this invention, the diluting solution comprises a buffer solution having a pH level corresponding to a pH level of one of the first or second CMP slurry solution. In accordance with another aspect of this embodiment, a plurality of different diluting solutions are applied to the polishing pad intermediate the respective first and second CMP steps.Type: GrantFiled: July 12, 1999Date of Patent: September 19, 2000Assignee: Micron Technology, Inc.Inventors: Daniel A. Koos, Sung C. Kim, Gurtej S. Sandhu
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Patent number: 6099604Abstract: A slurry composition enhances the removal of polish-resistant surface moieties from the surface of a semiconductor wafer during chemical-mechanical polishing. The slurry composition is a mixture including a solvent, a plurality of abrasive particles, and a chelating agent. The abrasive particles abrade the surface of the wafer to remove surface moieties and underlying material. The chelating agent is selected to react with polish-resistant surface moieties on the surface of the wafer surface, to thereby render the surface moieties easier to remove from the surface layer with substantially non-aggressive chemical-mechanical polishing techniques. In operation, the surface moieties and the underlying bulk material are removed by a combination of the chemical effects of the chelating agent and the mechanical effects of the abrasive particles.Type: GrantFiled: August 21, 1997Date of Patent: August 8, 2000Assignee: Micron Technology, Inc.Inventors: Gurtej Singh Sandhu, Donald Westmoreland, Daniel Koos
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Patent number: D473231Type: GrantFiled: May 14, 2002Date of Patent: April 15, 2003Assignee: HannStar Display Corp.Inventors: Daniel Koo, Jenn Yeu Weng, Meng Tse Tsai, Chen Cheng Wang, Ching Lang Chen
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Patent number: D474469Type: GrantFiled: April 15, 2002Date of Patent: May 13, 2003Assignee: HannStar Display Corp.Inventors: Daniel Koo, Jenn Yeu Weng, Meng Tse Tsai, Chen Cheng Wang, Ching Lang Chen
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Patent number: D476334Type: GrantFiled: May 9, 2002Date of Patent: June 24, 2003Inventors: Daniel Koo, Jenn Yeu Weng, Meng Tse Tsai, Chen Cheng Wang, Ching Lan Chen
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Patent number: D478904Type: GrantFiled: January 22, 2003Date of Patent: August 26, 2003Assignee: HannStar Display Corp.Inventors: Daniel Koo, Jenn Yeu Weng, Meng Tse Tsai, Chen Cheng Wang, Ching Lang Chen
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Patent number: D685026Type: GrantFiled: February 9, 2012Date of Patent: June 25, 2013Assignee: Ecoverte, LLCInventor: Daniel Koo
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Patent number: D740362Type: GrantFiled: February 9, 2012Date of Patent: October 6, 2015Assignee: ECOVERTE, LLC.Inventor: Daniel Koo