Abstract: A digitizer and processor device for a swept-source optical coherence tomography (SS-OCT) imaging system, comprising: an input configured to receive an OCT signal; a control input configured to receive a k-clock signal; a combiner unit (130) receiving the OCT signal and the k-clock signal configured to output a composite signal; a digitizing unit (60) arranged to convert the composite signal into a digital composite signal (69); a data processing unit (70) arranged to determine a profile of optical density in a sample that generated the OCT signal based on the digital composite signal (69).

Abstract: A digitizer and processor device for a swept-source optical coherence tomography (SS-OCT) imaging system, comprising: an input configured to receive an OCT signal; a control input configured to receive a k-clock signal; a combiner unit (130) receiving the OCT signal and the k-clock signal configured to output a composite signal; a digitizing unit (60) arranged to convert the composite signal into a digital composite signal (69); a data processing unit (70) arranged to determine a profile of optical density in a sample that generated the OCT signal based on the digital composite signal (69).

Abstract: A charge pump circuit includes a substrate and first well region formed in the substrate. A first transistor includes first and second conduction regions disposed in the first well region. A second well region is formed in the substrate. A third well region is formed within the second well region. A second transistor includes first and second conduction regions disposed in the third well region. The second well region and third well region are coupled to a common terminal. The common terminal receives a local potential and the first well region and second well region are commonly maintained at the local potential. The first transistor and second transistor operate within the charge pump cell. A plurality of charge pump cells can be cascaded together with an output of a first charge pump cell coupled to an input of a second charge pump cell.

Abstract: The final cell or cells in a cascade or ladder of voltage elevator cells may be exposed to significant overvoltages from electrostatic discharge originating in off-chip loads. In such conditions, the final cell or cells may be damaged or destroyed by such overvoltages. Protective circuitry may be added to one or more of the final voltage elevator cells to reduce or eliminate such damage or destruction by distributing the overvoltage among two or more cells. Such protective circuitry may include a capacitor coupled in parallel with the input and output node of one or more of the final voltage elevator cells. The protective circuitry may also include a resistor coupled in series between the final voltage elevator cell and the load.

Abstract: A measuring circuit for a proximity sensor, comprising a charge amplifier in a floating voltage domain that is driven by a square waveform. The output signal is sampled synchronously with the voltage of the floating domain, and demodulated by measuring the voltage steps amplitude. This approach is compatible with a switched capacitor implementation and allows discriminating the capacity signal from the ambient noise; the latter can be evaluated independently.

Abstract: A charge pump circuit includes a substrate and first well region formed in the substrate. A first transistor includes first and second conduction regions disposed in the first well region. A second well region is formed in the substrate. A third well region is formed within the second well region. A second transistor includes first and second conduction regions disposed in the third well region. The second well region and third well region are coupled to a common terminal. The common terminal receives a local potential and the first well region and second well region are commonly maintained at the local potential. The first transistor and second transistor operate within the charge pump cell. A plurality of charge pump cells can be cascaded together with an output of a first charge pump cell coupled to an input of a second charge pump cell.

Abstract: The final cell or cells in a cascade or ladder of voltage elevator cells may be exposed to significant overvoltages from electrostatic discharge originating in off-chip loads. In such conditions, the final cell or cells may be damaged or destroyed by such overvoltages. Protective circuitry may be added to one or more of the final voltage elevator cells to reduce or eliminate such damage or destruction by distributing the overvoltage among two or more cells. Such protective circuitry may include a capacitor coupled in parallel with the input and output node of one or more of the final voltage elevator cells. The protective circuitry may also include a resistor coupled in series between the final voltage elevator cell and the load.

Abstract: The voltage distribution in a cascade or ladder of voltage elevator cells may become irregular in certain conditions. In such conditions, one or more cells may become overstressed. Corrective circuitry may be added to one or more of the voltage elevator cells to reduce or eliminate such stresses. Such corrective circuitry may include a capacitor, a long-channel PMOS transistor, both a capacitor and a long-channel PMOS transistor in parallel, or other electrically equivalent components coupled in parallel with the input and output node of one or more of the voltage elevator cells.

Abstract: A circuit that includes a series arrangement of a capacitive element (C) and an active component (M10) forming an equivalent resistor. A DC current source (120 is connected to the active component, and a transistor (M11, 11) is provided for altering the conductance of the active component and fixing the mean level of a AC voltage (U.sub.ac). Such a voltage is applied to the terminals of the series arrangement, and the biased voltage having the desired mean level (U.sub.out) is tapped off the node (10) between the capacitive element (C) and the active component. A capacitive voltage divider (13) is also provided for modulating the DC current (i) passing through the active component (M10), with a fraction of the AC voltage to be biased. The circuit is particularly applicable to the determination of the mean level of the voltage produced by a quartz oscillator.