Abstract: A process for fabricating a micromechanical structure made of silicon carbide including a cavity, from a stack including a first silicon-carbide layer and a silicon layer on the first silicon-carbide layer, the process including shaping the silicon layer so as to form a discrete silicon structure on the first silicon-carbide layer. The process further includes, after the shaping of the silicon layer, a carbonization to initiate the removal of the discrete silicon structure; depositing a second silicon-carbide layer; and an annealing step, the discrete silicon structure being entirely removed at the end of the annealing.

Abstract: A process for fabricating a micromechanical structure made of silicon carbide including a cavity, from a stack including a first silicon-carbide layer and a silicon layer on the first silicon-carbide layer, the process including shaping the silicon layer so as to form a discrete silicon structure on the first silicon-carbide layer. The process further includes, after the shaping of the silicon layer, a carbonization to initiate the removal of the discrete silicon structure; depositing a second silicon-carbide layer; and an annealing step, the discrete silicon structure being entirely removed at the end of the annealing.

Abstract: An acoustic galvanic isolation device includes a substrate capable of transmitting an acoustic wave. A first network of vibrating membrane electroacoustic transducers is arranged on a first surface of the substrate. A second network of vibrating membrane electroacoustic transducers is arranged on a second opposite surface of the substrate. An effective thickness of the substrate exhibits a gradient between the first and second surfaces with respect to propagating the acoustic wave.

Abstract: A data transmission device includes a coder configured to code the data into a multifrequency signal. A first array of ultrasonic transducers with a vibrating membrane is disposed on a first surface of a wafer. The first array configured to convert the signal into a multifrequency acoustic signal propagating in the wafer. A second array of ultrasonic transducers is disposed on a second surface of the wafer. The second array includes at least two assemblies of vibrating membrane ultrasonic transducers having resonance frequencies equal to two different frequencies of the multifrequency signal.

Abstract: An acoustic galvanic isolation device includes a substrate capable of transmitting an acoustic wave. A first network of vibrating membrane electroacoustic transducers is arranged on a first surface of the substrate. A second network of vibrating membrane electroacoustic transducers is arranged on a second opposite surface of the substrate. An effective thickness of the substrate exhibits a gradient between the first and second surfaces with respect to propagating the acoustic wave.

Abstract: A Schottky diode may include a semiconductor substrate having first and second opposing surfaces, and a buffer layer over the first surface of the semiconductor substrate. The Schottky diode may include a first doped GaN layer over the buffer layer and having first and second opposing surfaces, the second surface of the first doped GaN layer being adjacent the buffer layer, and a second doped GaN layer over the second surface of the first doped GaN layer and having a dopant concentration level less than a dopant concentration level of the first doped GaN layer. The buffer layer, the first doped GaN layer, and the second doped GaN layer may define an opening. The Schottky diode may include a first metallization layer being coupled to the semiconductor substrate and to the first surface of the first doped GaN layer and being in the opening.

Abstract: An electroacoustic transducer including a first electrode formed on a substrate capable of transmitting ultrasounds, a membrane formed above the first electrode and separated therefrom by a cavity, a second electrode formed on the membrane, a first insulating layer on the second electrode, and a third electrode formed on the first insulating layer.

Abstract: An electroacoustic transducer including a first electrode formed on a substrate capable of transmitting ultrasounds, a membrane formed above the first electrode and separated therefrom by a cavity, a second electrode formed on the membrane, a first insulating layer on the second electrode, and a third electrode formed on the first insulating layer.