Patents by Inventor Daniel Amingual

Daniel Amingual has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5332899
    Abstract: A system for the conversion of an infrared image into a visible or near infrared image includes optical input and output devices, an infrared detector on which is formed an infrared image of a scene, a circuit for reading the signal supplied by the detector, a circuit for processing the signals from the reading circuit, a visible or near infrared light emitter for supplying the image in the form of visible or near infrared light from signals of the processing circuit, a circuit for addressing the emitter, and a substrate. One face of the substrate forms a focal plane common to the optical input and output devices. The detector, the reading, processing, and addressing circuits, as well as the emitter, are integrated in this focal plane.
    Type: Grant
    Filed: May 19, 1993
    Date of Patent: July 26, 1994
    Assignee: Commissariat a l'Energie Atomique
    Inventors: Michel Wolny, Daniel Amingual
  • Patent number: 5216510
    Abstract: Optoelectronic detectors (10) are arranged in matrix form. Integrated synchronous detectors (22) are connected to each column of the detectors (10). The detection is modulated and the detection signals demodulated by the synchronous detectors (22) making it possible to considerably improve the signal/noise (S/N) ratio of the apparatus.
    Type: Grant
    Filed: September 23, 1991
    Date of Patent: June 1, 1993
    Assignee: Commissariat a l'Energie Atomique
    Inventors: Daniel Amingual, Luc Audaire, Michel Rieux
  • Patent number: 4791467
    Abstract: Heterojunction HgCdTe detector has in order, a first type P Hg.sub.1-x.sbsb.1 Cd.sub.x.sbsb.i Te monocrystalline semiconductor layer, x.sub.1 being a number between 0 and 1, containing a first type P region, a second type P Hg.sub.1-x.sbsb.2 Cd.sub.x.sbsb.2 Te monocrystalline semiconductor layer, x.sub.2 being a number higher than x.sub.1 between 0 and 1, containing a second type N region which faces and is in contact with the first region, an electrical insulant located above the first semiconductor layer and an electric contact element located on the insulant for collecting the electric signal produced in said first region, said contact element having a part traversing the second region and partly penetrating the first region with application to infrared radiation detection.
    Type: Grant
    Filed: December 18, 1986
    Date of Patent: December 13, 1988
    Assignee: Commissariat A L'Energie Atomique
    Inventors: Daniel Amingual, Pierre Felix
  • Patent number: 4675525
    Abstract: The invention relates to a matrix device for the detection of light radiation with individual cold screens integrated into a substrate and to its production process. This device comprises detectors arranged in matrix-like manner and defined in a detection material, a substrate which is transparent to the radiation to be detected and on which is epitaxied the detection material and provided in its upper part with blind holes distributed in matrix-like manner, each hole being positioned facing a detector, a layer of anti-reflecting transparent material covering the bottom of the holes and a layer of a material absorbing the radiation covering the upper face of the substrate and the walls of the holes.The invention more particularly applies to an infrared imaging system.
    Type: Grant
    Filed: January 21, 1986
    Date of Patent: June 23, 1987
    Assignee: Commissariat a l'Energie Atomique
    Inventors: Daniel Amingual, Pierre Felix