Patents by Inventor Daniel Arthur Haeger

Daniel Arthur Haeger has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • LED with internally confined current injection area
    Patent number: 11978825
    Abstract: Methods and structures for forming arrays of LED devices are disclosed. The LED devices in accordance with embodiments of the invention may include an internally confined current injection area to reduce non-radiative recombination due to edge effects. Several manners for confining current may include etch removal of a current distribution layer, etch removal of a current distribution layer and active layer followed by mesa re-growth, isolation by ion implant or diffusion, quantum well intermixing, and oxide isolation.
    Type: Grant
    Filed: July 29, 2021
    Date of Patent: May 7, 2024
    Assignee: Apple Inc.
    Inventors: Kelly McGroddy, Hsin-Hua Hu, Andreas Bibl, Clayton Ka Tsun Chan, Daniel Arthur Haeger
  • LED WITH INTERNALLY CONFINED CURRENT INJECTION AREA
    Publication number: 20220013688
    Abstract: Methods and structures for forming arrays of LED devices are disclosed. The LED devices in accordance with embodiments of the invention may include an internally confined current injection area to reduce non-radiative recombination due to edge effects. Several manners for confining current may include etch removal of a current distribution layer, etch removal of a current distribution layer and active layer followed by mesa re-growth, isolation by ion implant or diffusion, quantum well intermixing, and oxide isolation.
    Type: Application
    Filed: July 29, 2021
    Publication date: January 13, 2022
    Inventors: Kelly McGroddy, Hsin-Hua Hu, Andreas Bibl, Clayton Ka Tsun Chan, Daniel Arthur Haeger
  • LED with internally confined current injection area
    Patent number: 11101405
    Abstract: Methods and structures for forming arrays of LED devices are disclosed. The LED devices in accordance with embodiments of the invention may include an internally confined current injection area to reduce non-radiative recombination due to edge effects. Several manners for confining current may include etch removal of a current distribution layer, etch removal of a current distribution layer and active layer followed by mesa re-growth, isolation by ion implant or diffusion, quantum well intermixing, and oxide isolation.
    Type: Grant
    Filed: February 6, 2020
    Date of Patent: August 24, 2021
    Assignee: Apple Inc.
    Inventors: Kelly McGroddy, Hsin-Hua Hu, Andreas Bibl, Clayton Ka Tsun Chan, Daniel Arthur Haeger
  • LED WITH INTERNALLY CONFINED CURRENT INJECTION AREA
    Publication number: 20200251614
    Abstract: Methods and structures for forming arrays of LED devices are disclosed. The LED devices in accordance with embodiments of the invention may include an internally confined current injection area to reduce non-radiative recombination due to edge effects. Several manners for confining current may include etch removal of a current distribution layer, etch removal of a current distribution layer and active layer followed by mesa re-growth, isolation by ion implant or diffusion, quantum well intermixing, and oxide isolation.
    Type: Application
    Filed: February 6, 2020
    Publication date: August 6, 2020
    Inventors: Kelly McGroddy, Hsin-Hua Hu, Andreas Bibl, Clayton Ka Tsun Chan, Daniel Arthur Haeger
  • LED structures for reduced non-radiative sidewall recombination
    Patent number: 10714655
    Abstract: LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.
    Type: Grant
    Filed: August 20, 2019
    Date of Patent: July 14, 2020
    Assignee: Apple Inc.
    Inventors: David P. Bour, Kelly McGroddy, Daniel Arthur Haeger, James Michael Perkins, Arpan Chakraborty, Jean-Jacques P. Drolet, Dmitry S. Sizov
  • LED with internally confined current injection area
    Patent number: 10593832
    Abstract: Methods and structures for forming arrays of LED devices are disclosed. The LED devices in accordance with embodiments of the invention may include an internally confined current injection area to reduce non-radiative recombination due to edge effects. Several manners for confining current may include etch removal of a current distribution layer, etch removal of a current distribution layer and active layer followed by mesa re-growth, isolation by ion implant or diffusion, quantum well intermixing, and oxide isolation.
    Type: Grant
    Filed: July 29, 2016
    Date of Patent: March 17, 2020
    Assignee: Apple Inc.
    Inventors: Kelly McGroddy, Hsin-Hua Hu, Andreas Bibl, Clayton Ka Tsun Chan, Daniel Arthur Haeger
  • LED STRUCTURES FOR REDUCED NON-RADIATIVE SIDEWALL RECOMBINATION
    Publication number: 20190371964
    Abstract: LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.
    Type: Application
    Filed: August 20, 2019
    Publication date: December 5, 2019
    Inventors: David P. Bour, Kelly McGroddy, Daniel Arthur Haeger, James Michael Perkins, Arpan Chakraborty, Jean-Jacques P. Drolet, Dmitry S. Sizov
  • LED structures for reduced non-radiative sidewall recombination
    Patent number: 10446712
    Abstract: LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.
    Type: Grant
    Filed: December 13, 2018
    Date of Patent: October 15, 2019
    Assignee: Apple Inc.
    Inventors: David P. Bour, Kelly McGroddy, Daniel Arthur Haeger, James Michael Perkins, Arpan Chakraborty, Jean-Jacques P. Drolet, Dmitry S. Sizov
  • LED STRUCTURES FOR REDUCED NON-RADIATIVE SIDEWALL RECOMBINATION
    Publication number: 20190115495
    Abstract: LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.
    Type: Application
    Filed: December 13, 2018
    Publication date: April 18, 2019
    Inventors: David P. Bour, Kelly McGroddy, Daniel Arthur Haeger, James Michael Perkins, Arpan Chakraborty, Jean-Jacques P. Drolet, Dmitry S. Sizov
  • LED structures for reduced non-radiative sidewall recombination
    Patent number: 10193013
    Abstract: LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.
    Type: Grant
    Filed: November 30, 2017
    Date of Patent: January 29, 2019
    Assignee: Apple Inc.
    Inventors: David P. Bour, Kelly McGroddy, Daniel Arthur Haeger, James Michael Perkins, Arpan Chakraborty, Jean-Jacques P. Drolet, Dmitry S. Sizov
  • LED STRUCTURES FOR REDUCED NON-RADIATIVE SIDEWALL RECOMBINATION
    Publication number: 20180097145
    Abstract: LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.
    Type: Application
    Filed: November 30, 2017
    Publication date: April 5, 2018
    Inventors: David P. Bour, Kelly McGroddy, Daniel Arthur Haeger, James Michael Perkins, Arpan Chakraborty, Jean-Jacques P. Drolet, Dmitry S. Sizov
  • LED structures for reduced non-radiative sidewall recombination
    Patent number: 9865772
    Abstract: LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.
    Type: Grant
    Filed: February 27, 2017
    Date of Patent: January 9, 2018
    Assignee: APPLE INC.
    Inventors: David P. Bour, Kelly McGroddy, Daniel Arthur Haeger, James Michael Perkins, Arpan Chakraborty, Jean-Jacques P. Drolet, Dmitry S. Sizov
  • LED STRUCTURES FOR REDUCED NON-RADIATIVE SIDEWALL RECOMBINATION
    Publication number: 20170170360
    Abstract: LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.
    Type: Application
    Filed: February 27, 2017
    Publication date: June 15, 2017
    Inventors: David P. Bour, Kelly McGroddy, Daniel Arthur Haeger, James Michael Perkins, Arpan Chakraborty, Jean-Jacques P. Drolet, Dmitry S. Sizov
  • LED structures for reduced non-radiative sidewall recombination
    Patent number: 9601659
    Abstract: LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.
    Type: Grant
    Filed: June 30, 2016
    Date of Patent: March 21, 2017
    Assignee: Apple Inc.
    Inventors: David P. Bour, Kelly McGroddy, Daniel Arthur Haeger, James Michael Perkins, Arpan Chakraborty, Jean-Jacques P. Drolet, Dmitry S. Sizov
  • LED WITH INTERNALLY CONFINED CURRENT INJECTION AREA
    Publication number: 20160336484
    Abstract: Methods and structures for forming arrays of LED devices are disclosed. The LED devices in accordance with embodiments of the invention may include an internally confined current injection area to reduce non-radiative recombination due to edge effects. Several manners for confining current may include etch removal of a current distribution layer, etch removal of a current distribution layer and active layer followed by mesa re-growth, isolation by ion implant or diffusion, quantum well intermixing, and oxide isolation.
    Type: Application
    Filed: July 29, 2016
    Publication date: November 17, 2016
    Inventors: Kelly McGroddy, Hsin-Hua Hu, Andreas Bibl, Clayton Ka Tsun Chan, Daniel Arthur Haeger
  • LED structures for reduced non-radiative sidewall recombination
    Patent number: 9484492
    Abstract: LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.
    Type: Grant
    Filed: September 14, 2015
    Date of Patent: November 1, 2016
    Assignee: Apple Inc.
    Inventors: David P. Bour, Kelly McGroddy, Daniel Arthur Haeger, James Michael Perkins, Arpan Chakraborty, Jean-Jacques P. Drolet
  • LED STRUCTURES FOR REDUCED NON-RADIATIVE SIDEWALL RECOMBINATION
    Publication number: 20160315218
    Abstract: LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.
    Type: Application
    Filed: June 30, 2016
    Publication date: October 27, 2016
    Inventors: David P. Bour, Kelly McGroddy, Daniel Arthur Haeger, James Michael Perkins, Arpan Chakraborty, Jean-Jacques P. Drolet, Dmitry S. Sizov
  • LED with internally confined current injection area
    Patent number: 9450147
    Abstract: Methods and structures for forming arrays of LED devices are disclosed. The LED devices in accordance with embodiments of the invention may include an internally confined current injection area to reduce non-radiative recombination due to edge effects. Several manners for confining current may include etch removal of a current distribution layer, etch removal of a current distribution layer and active layer followed by mesa re-growth, isolation by ion implant or diffusion, quantum well intermixing, and oxide isolation.
    Type: Grant
    Filed: February 28, 2014
    Date of Patent: September 20, 2016
    Assignee: Apple Inc.
    Inventors: Kelly McGroddy, Hsin-Hua Hu, Andreas Bibl, Clayton Ka Tsun Chan, Daniel Arthur Haeger
  • LED STRUCTURES FOR REDUCED NON-RADIATIVE SIDEWALL RECOMBINATION
    Publication number: 20160197232
    Abstract: LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.
    Type: Application
    Filed: September 14, 2015
    Publication date: July 7, 2016
    Inventors: David P. Bour, Kelly McGroddy, Daniel Arthur Haeger, James Michael Perkins, Arpan Chakraborty, Jean-Jacques P. Drolet
  • LED WITH INTERNALLY CONFINED CURRENT INJECTION AREA
    Publication number: 20150187991
    Abstract: Methods and structures for forming arrays of LED devices are disclosed. The LED devices in accordance with embodiments of the invention may include an internally confined current injection area to reduce non-radiative recombination due to edge effects. Several manners for confining current may include etch removal of a current distribution layer, etch removal of a current distribution layer and active layer followed by mesa re-growth, isolation by ion implant or diffusion, quantum well intermixing, and oxide isolation.
    Type: Application
    Filed: February 28, 2014
    Publication date: July 2, 2015
    Applicant: LuxVue Technology Corporation
    Inventors: Kelly McGroddy, Hsin-Hua Hu, Andreas Bibl, Clayton Ka Tsun Chan, Daniel Arthur Haeger