Abstract: A method of forming a conductive plug in a contact hole comprising: providing a wafer having a conductive layer comprising silicon adjacent a dielectric layer comprising silicon oxide, and a contact hole disposed in the dielectric layer, the contact hole having surfaces that include sidewalls formed in the dielectric layer and a bottom defined by the conductive layer, a contaminant material being disposed over at least a portion of the conductive layer defining the bottom of the contact hole, the dielectric layer having a surface in which the contact hole terminates in an opening opposing the bottom; depositing a layer of a barrier material on the work object, the layer having a substantially uniform thickness from the surface at the opening of the contact hole to the bottom of the contact hole; and depositing a layer of a protective material barrier around at least opening of the contact hole; etching the material at the bottom of the contact hole to expose the contaminant material while retaining protective

Abstract: A method of forming a conductive plug in a contact hole comprising: providing a wafer having a conductive layer comprising silicon adjacent a dielectric layer comprising silicon oxide, and a contact hole disposed in the dielectric layer, the contact hole having surfaces that include sidewalls formed in the dielectric layer and a bottom defined by the conductive layer, a contaminant material being disposed over at least a portion of the conductive layer defining the bottom of the contact hole, the dielectric layer having a surface in which the contact hole terminates in an opening opposing the bottom; depositing a layer of a barrier material on the work object, the layer having a substantially uniform thickness from the surface at the opening of the contact hole to the bottom of the contact hole; and depositing a layer of a protective material barrier around at least opening of the contact hole; etching the material at the bottom of the contact hole to expose the contaminant material while retaining protective

Abstract: Methods and apparatuses for removing material from discrete areas on a semiconductor wafer are described. In one implementation, an etchant applicator is provided having a tip portion. Liquid etchant material is suspended proximate the tip portion and the etchant applicator is moved, together with the suspended liquid, sufficiently close to a discrete area on a wafer to transfer liquid etchant onto the discrete area. In various embodiments the tip portion can comprise fluid permeable materials, fluid-absorbent materials, and/or wick assemblies. An exhaust outlet can be provided operably proximate the tip portion for removing material from over the wafer. The tip portion can be moved to touch the discrete area.

Abstract: Methods and apparatuses for removing material from discrete areas on a semiconductor wafer are described. In one implementation, an etchant applicator is provided having a tip portion. Liquid etchant material is suspended proximate the tip portion and the etchant applicator is moved, together with the suspended liquid, sufficiently close to a discrete area on a wafer to transfer liquid etchant onto the discrete area. In various embodiments the tip portion can comprise fluid permeable materials, fluid-absorbent materials, and/or wick assemblies. An exhaust outlet can be provided operably proximate the tip portion for removing material from over the wafer. The tip portion can be moved to touch the discrete area.

Abstract: Devices and methods for releasably attaching substrate assemblies to carrier heads of planarizing machines in mechanical and/or chemical-mechanical planarization of microelectronic-device substrate assemblies. One aspect of the invention is directed toward a backing member for use in a carrier head to selectively couple a substrate assembly to the carrier head via a vacuum force before, during and after planarizing the substrate assembly. The backing member can include a body having a first section with a first surface configured to be received by the carrier head and a second section with a second surface configured to support a backside of the substrate assembly. The first and second sections of the body are preferably composed of flexible, incompressible materials. The backing member also includes a first vacuum passageway extending, through the body and a plurality of second vacuum passageways coupled to the first passageway.

Abstract: A method and apparatus for endpointing a planarization process of a microelectronic substrate. The apparatus can include a source of electrical power having first and second electrical contacts coupled to the microelectronic substrate to form a conductive path through the substrate. An impedance of the conductive path changes as conductive material is removed from the substrate during planarization. In one embodiment, one contact can be attached to an upper surface of the substrate and the other contact can be attached to an intermediate surface between the upper surface and a lower surface of the substrate. In another embodiment, both contacts are connected to the intermediate surface and in still another embodiment, one contact can be connected to a retainer adjacent the substrate. In yet another embodiment, the power source induces a current in the conductive material, and the endpoint is detected by detecting a change in the induced current as the conductive material is removed.

Abstract: Devices and methods for releasably attaching substrate assemblies to carrier heads of planarizing machines in mechanical and/or chemical-mechanical planarization of microelectronic-device substrate assemblies. One aspect of the invention is directed toward a backing member for use in a carrier head to selectively couple a substrate assembly to the carrier head via a vacuum force before, during and after planarizing the substrate assembly. The backing member can include a body having a first section with a first surface configured to be received by the carrier head and a second section with a second surface configured to support a backside of the substrate assembly. The first and second sections of the body are preferably composed of flexible, incompressible materials. The backing member also includes a first vacuum passageway extending through the body and a plurality of second vacuum passageways coupled to the first passageway.

Abstract: A method and apparatus for endpointing a planarization process of a microelectronic substrate. The apparatus can include a source of electrical power having first and second electrical contacts coupled to the microelectronic substrate to form a conductive path through the substrate. An impedance of the conductive path changes as conductive material is removed from the substrate during planarization. In one embodiment, one contact can be attached to an upper surface of the substrate and the other contact can be attached to an intermediate surface between the upper surface and a lower surface of the substrate. In another embodiment, both contacts are connected to the intermediate surface and in still another embodiment, one contact can be connected to a retainer adjacent the substrate. In yet another embodiment, the power source induces a current in the conductive material, and the endpoint is detected by detecting a change in the induced current as the conductive material is removed.

Abstract: Methods and apparatuses for removing material from discrete areas on a semiconductor wafer are described. In one implementation, an etchant applicator is provided having a tip portion. Liquid etchant material is suspended proximate the tip portion and the etchant applicator is moved, together with the suspended liquid, sufficiently close to a discrete area on a wafer to transfer liquid etchant onto the discrete area. In various embodiments the tip portion can comprise fluid permeable materials, fluid-absorbent materials, and/or wick assemblies. An exhaust outlet can be provided operably proximate the tip portion for removing material from over the wafer. The tip portion can be moved to touch the discrete area.