Patents by Inventor Daniel B. Kaplan

Daniel B. Kaplan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for improved growth of two-dimensional transition metal dichalcogenides
    Patent number: 9620665
    Abstract: Processes for controlling the growth and thickness of two-dimensional transition metal dichalcogenides are provided. The process modifies an insulator substrate surface with an electron or ion beam to create charged areas on the substrate surface. The treated surface allows for hydroxylation of the charged species which serves as nucleation sites for the seed particles during chemical vapor deposition that promotes growth of thin layers of transition metal dichalcogenides.
    Type: Grant
    Filed: June 16, 2016
    Date of Patent: April 11, 2017
    Assignee: The United States of America as Represented by the Secretary of the Army
    Inventors: Stephen F. Bartolucci, Daniel B. Kaplan