Patents by Inventor Daniel B. Thompson

Daniel B. Thompson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Flexible map with application data identifiers for PLC communications
    Patent number: 12181852
    Abstract: A flexible map with application data identifiers for PLC communications is described. An example method comprises receiving a first user input indicative of a selection of a parameter from a plurality of parameters associated with an adhesive dispensing system (614). The parameter is subject to data exchange between a controller (616) of the adhesive dispensing system (614) and an associated programmable logic controller (610). A second user input is received that is indicative of a memory space location in a memory space of the controller (616). A custom data map is generated that is indicative of an association between the selected parameter and the memory space location.
    Type: Grant
    Filed: September 18, 2020
    Date of Patent: December 31, 2024
    Assignee: Nordson Corporation
    Inventors: Wei Wang, Michael J. Palmer, Daniel B. Thompson, Andreas Ehlers
  • FLEXIBLE MAP WITH APPLICATION DATA IDENTIFIERS FOR PLC COMMUNICATIONS
    Publication number: 20220326675
    Abstract: A flexible map with application data identifiers for PLC communications is described. An example method comprises receiving a first user input indicative of a selection of a parameter from a plurality of parameters associated with an adhesive dispensing system (614). The parameter is subject to data exchange between a controller (616) of the adhesive dispensing system (614) and an associated programmable logic controller (610). A second user input is received that is indicative of a memory space location in a memory space of the controller (616). A custom data map is generated that is indicative of an association between the selected parameter and the memory space location.
    Type: Application
    Filed: September 9, 2020
    Publication date: October 13, 2022
    Inventors: Wei WANG, Michael J. PALMER, Daniel B. THOMPSON, Andreas EHLERS
  • Light emitting diodes with zinc oxide current spreading and light extraction layers deposited from low temperature aqueous solution
    Patent number: 9653655
    Abstract: A method for fabricating a Light Emitting Diode (LED) with increased light extraction efficiency, comprising providing a III-Nitride based LED structure comprising a light emitting active layer between a p-type layer and an n-type layer; growing a Zinc Oxide (ZnO) layer epitaxially on the p-type layer by submerging a surface of the p-type layer in a low temperature aqueous solution, wherein the ZnO layer is a transparent current spreading layer; and depositing a p-type contact on the ZnO layer. The increase in efficiency may be more than 93% with very little or no increase in cost.
    Type: Grant
    Filed: November 3, 2010
    Date of Patent: May 16, 2017
    Assignee: The Regents of the University of California
    Inventors: Daniel B. Thompson, Jacob J. Richardson, Steven P. DenBaars, Jin Hyeok Kim, MaryAnn E. Lange
  • Light emitting diode structure utilizing zinc oxide nanorod arrays on one or more surfaces, and a low cost method of producing such zinc oxide nanorod arrays
    Patent number: 8841691
    Abstract: A method of fabricating a Light Emitting Diode with improved light extraction efficiency, comprising depositing a plurality of Zinc Oxide (ZnO) nanorods on one or more surfaces of a III-Nitride based LED, by growing the ZnO nanorods from an aqueous solution, wherein the surfaces are different from c-plane surfaces of III-Nitride and transmit light generated by the LED.
    Type: Grant
    Filed: August 19, 2013
    Date of Patent: September 23, 2014
    Assignee: The Regents of the University of California
    Inventors: Jacob J. Richardson, Daniel B. Thompson, Ingrid Koslow, Jun-Seok Ha, Frederick F. Lange, Steven P. DenBaars, Shuji Nakamura
  • HIGH BRIGHTNESS LIGHT EMITTING DIODE COVERED BY ZINC OXIDE LAYERS ON MULTIPLE SURFACES GROWN IN LOW TEMPERATURE AQUEOUS SOLUTION
    Publication number: 20140103361
    Abstract: A high brightness III-Nitride based Light Emitting Diode (LED), comprising multiple surfaces covered by Zinc Oxide (ZnO) layers, wherein the ZnO layers are grown in a low temperature aqueous solution and each have a (0001) c-orientation and a top surface that is a (0001) plane.
    Type: Application
    Filed: December 19, 2013
    Publication date: April 17, 2014
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Daniel B. Thompson, Jacob J. Richardson, Ingrid Koslow, Jun Seok Ha, Frederick F. Lange, Steven P. DenBaars, Shuji Nakamura
  • High brightness light emitting diode covered by zinc oxide layers on multiple surfaces grown in low temperature aqueous solution
    Patent number: 8637334
    Abstract: A high brightness III-Nitride based Light Emitting Diode (LED), comprising multiple surfaces covered by Zinc Oxide (ZnO) layers, wherein the ZnO layers are grown in a low temperature aqueous solution and each have a (0001) c-orientation and a top surface that is a (0001) plane.
    Type: Grant
    Filed: November 3, 2010
    Date of Patent: January 28, 2014
    Assignee: The Regents of the University of California
    Inventors: Daniel B. Thompson, Jacob J. Richardson, Ingrid Koslow, Jun Seok Ha, Steven P. DenBaars, Shuji Nakamura, Maryann E. Lange
  • LIGHT EMITTING DIODE STRUCTURE UTILIZING ZINC OXIDE NANOROD ARRAYS ON ONE OR MORE SURFACES, AND A LOW COST METHOD OF PRODUCING SUCH ZINC OXIDE NANOROD ARRAYS
    Publication number: 20130328012
    Abstract: A method of fabricating a Light Emitting Diode with improved light extraction efficiency, comprising depositing a plurality of Zinc Oxide (ZnO) nanorods on one or more surfaces of a III-Nitride based LED, by growing the ZnO nanorods from an aqueous solution, wherein the surfaces are different from c-plane surfaces of III-Nitride and transmit light generated by the LED.
    Type: Application
    Filed: August 19, 2013
    Publication date: December 12, 2013
    Applicant: The Regents of the University of California
    Inventors: Jacob J. Richardson, Daniel B. Thompson, Ingrid Koslow, Jun-Seok Ha, Frederick F. Lange, Steven P. DenBaars, Shuji Nakamura
  • Light emitting diode structure utilizing zinc oxide nanorod arrays on one or more surfaces, and a low cost method of producing such zinc oxide nanorod arrays
    Patent number: 8536618
    Abstract: A method of fabricating a Light Emitting Diode with improved light extraction efficiency, comprising depositing a plurality of Zinc Oxide (ZnO) nanorods on one or more surfaces of a III-Nitride based LED, by growing the ZnO nanorods from an aqueous solution, wherein the surfaces are different from c-plane surfaces of III-Nitride and transmit light generated by the LED.
    Type: Grant
    Filed: November 3, 2010
    Date of Patent: September 17, 2013
    Assignee: The Regents of the University of California
    Inventors: Jacob J. Richardson, Daniel B. Thompson, Ingrid Koslow, Jun Seok Ha, Steven P. DenBaars, Shuji Nakamura, Maryann E. Lange
  • Method for fabricating a direct wafer bonded optoelectronic device
    Patent number: 8334151
    Abstract: An (Al, Ga, In)N and ZnO direct wafer bonded light emitting diode (LED), wherein light passes through electrically conductive ZnO. Flat and clean surfaces are prepared for both the (Al, Ga, In)N and ZnO wafers. A wafer bonding process is then performed between the (Al, Ga, In)N and ZnO wafers, wherein the (Al, Ga, In)N and ZnO wafers are joined together and then wafer bonded in a nitrogen ambient under uniaxial pressure at a set temperature for a set duration. After the wafer bonding process, ZnO is shaped for increasing light extraction from inside of LED.
    Type: Grant
    Filed: April 1, 2010
    Date of Patent: December 18, 2012
    Assignee: The Regents of the University of California
    Inventors: Akihiko Murai, Christina Ye Chen, Daniel B. Thompson, Lee S. McCarthy, Steven P. DenBaars, Shuji Nakamura, Umesh K. Mishra
  • HIGH BRIGHTNESS LIGHT EMITTING DIODE COVERED BY ZINC OXIDE LAYERS ON MULTIPLE SURFACES GROWN IN LOW TEMPERATURE AQUEOUS SOLUTION
    Publication number: 20110266551
    Abstract: A high brightness III-Nitride based Light Emitting Diode (LED), comprising multiple surfaces covered by Zinc Oxide (ZnO) layers, wherein the ZnO layers are grown in a low temperature aqueous solution and each have a (0001) c-orientation and a top surface that is a (0001) plane.
    Type: Application
    Filed: November 3, 2010
    Publication date: November 3, 2011
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Daniel B. Thompson, Jacob J. Richardson, Ingrid Koslow, Jun Seok Ha, Frederick F. Lange, Steven P. DenBaars, Shuji Nakamura, Maryann E. Lange
  • LIGHT EMITTING DIODE STRUCTURE UTILIZING ZINC OXIDE NANOROD ARRAYS ON ONE OR MORE SURFACES, AND A LOW COST METHOD OF PRODUCING SUCH ZINC OXIDE NANOROD ARRAYS
    Publication number: 20110108873
    Abstract: A method of fabricating a Light Emitting Diode with improved light extraction efficiency, comprising depositing a plurality of Zinc Oxide (ZnO) nanorods on one or more surfaces of a III-Nitride based LED, by growing the ZnO nanorods from an aqueous solution, wherein the surfaces are different from c-plane surfaces of III-Nitride and transmit light generated by the LED.
    Type: Application
    Filed: November 3, 2010
    Publication date: May 12, 2011
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Jacob J. Richardson, Daniel B. Thompson, Ingrid Koslow, Jun Seok Ha, Frederick F. Lange, Steven P. DenBaars, Shuji Nakamura
  • LIGHT EMITTING DIODES WITH ZINC OXIDE CURRENT SPREADING AND LIGHT EXTRACTION LAYERS DEPOSITED FROM LOW TEMPERATURE AQUEOUS SOLUTION
    Publication number: 20110101414
    Abstract: A method for fabricating a Light Emitting Diode (LED) with increased light extraction efficiency, comprising providing a III-Nitride based LED structure comprising a light emitting active layer between a p-type layer and an n-type layer; growing a Zinc Oxide (ZnO) layer epitaxially on the p-type layer by submerging a surface of the p-type layer in a low temperature aqueous solution, wherein the ZnO layer is a transparent current spreading layer; and depositing a p-type contact on the ZnO layer. The increase in efficiency may be more than 93% with very little or no increase in cost.
    Type: Application
    Filed: November 3, 2010
    Publication date: May 5, 2011
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Daniel B. Thompson, Jacob J. Richardson, Steven P. DenBaars, Frederick F. Lange, MaryAnn E. Lange, Jin Hyeok Kim
  • (Al,Ga,In)N AND ZnO DIRECT WAFER BONDED STRUCTURE FOR OPTOELECTRONIC APPLICATIONS, AND ITS FABRICATION METHOD
    Publication number: 20100187555
    Abstract: An (Al, Ga, In)N and ZnO direct wafer bonded light emitting diode (LED), wherein light passes through electrically conductive ZnO. Flat and clean surfaces are prepared for both the (Al, Ga, In)N and ZnO wafers. A wafer bonding process is then performed between the (Al, Ga, In)N and ZnO wafers, wherein the (Al, Ga, In)N and ZnO wafers are joined together and then wafer bonded in a nitrogen ambient under uniaxial pressure at a set temperature for a set duration. After the wafer bonding process, ZnO is shaped for increasing light extraction from inside of LED.
    Type: Application
    Filed: April 1, 2010
    Publication date: July 29, 2010
    Applicants: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA, JAPAN SCIENCE AND TECHNOLOGY AGENCY
    Inventors: Akihiko Murai, Christina Ye Chen, Daniel B. Thompson, Lee S. McCarthy, Steven P. DenBaars, Shuji Nakamura, Umesh K. Mishra
  • (Al,Ga,In)N and ZnO direct wafer bonded structure for optoelectronic applications, and its fabrication method
    Patent number: 7719020
    Abstract: An (Al, Ga, In)N and ZnO direct wafer bonded light emitting diode (LED), wherein light passes through electrically conductive ZnO. Flat and clean surfaces are prepared for both the (Al, Ga, In)N and ZnO wafers. A wafer bonding process is then performed between the (Al, Ga, In)N and ZnO wafers, wherein the (Al, Ga, In)N and ZnO wafers are joined together and then wafer bonded in a nitrogen ambient under uniaxial pressure at a set temperature for a set duration. After the wafer bonding process, ZnO is shaped for increasing light extraction from inside of LED.
    Type: Grant
    Filed: June 16, 2006
    Date of Patent: May 18, 2010
    Assignees: The Regents of the University of California, Japan Science and Technology Agency
    Inventors: Akihiko Murai, Christina Ye Chen, Daniel B. Thompson, Lee S. McCarthy, Steven P. DenBaars, Shuji Nakamura, Umesh K. Mishra