Abstract: One example discloses an on-chip shielded device, including: a planar structure including a substrate and a passivation layer; an electrical component formed within the substrate and coupled to an input signal path and an output signal path; a first shielding element positioned above the electrical component and the passivation layer; and a second shielding element positioned above the electrical component, the passivation layer and the first shielding element.

Abstract: An output-impedance in a power amplifier is provided. A first transistor QBUF of a buffer stage is connected to a first side of a resistor RF and a second transistor QAMP to a second opposite side of the resistor RF. The first transistor feeds a current IRF to the second resistor QAMP. The current IRF at the second transistor is copied and multiplied by a factor (n) to form an output current IOUT, as (1+n)*IRF. The current IRF is fed back to the first transistor and the output current IOUT is fed to a load resistor R.

Abstract: An output-impedance in a power amplifier is provided. A first transistor QBUF of a buffer stage is connected to a first side of a resistor RF and a second transistor QAMP to a second opposite side of the resistor RF. The first transistor feeds a current IRF to the second resistor QAMP. The current IRF at the second transistor is copied and multiplied by a factor (n) to form an output current IOUT, as (1+n)* IRF. The current IRF is fed back to the first transistor and the output current IOUT is fed to a load resistor R.

Abstract: Briefly, in accordance with one or more embodiments, a dual mode power amplifier is capable of operating in either linear mode such as class A operation, or a non-linear mode such as class F operation. The power amplifier may be utilized in an RFID interrogator. The power amplifier may be biased to operate in a linear mode if the power amplifier is operating in a higher linearity mode, or may be biased to operate in a non-linear mode if the power amplifier is operating in a higher efficiency, lower power mode. The power amplifier may comprise two or more amplifiers coupled in parallel. A current mirror circuit may turn on more amplifiers if the power amplifier is operating in a higher power mode, and may turn on fewer amplifiers if the power amplifier is operating a lower power mode.

Abstract: Briefly, in accordance with one or more embodiments, a dual mode power amplifier is capable of operating in either linear mode such as class A operation, or a non-linear mode such as class F operation. The power amplifier may be utilized in an RFID interrogator. The power amplifier may be biased to operate in a linear mode if the power amplifier is operating in a higher linearity mode, or may be biased to operate in a non-linear mode if the power amplifier is operating in a higher efficiency, lower power mode. The power amplifier may comprise two or more amplifiers coupled in parallel. A current mirror circuit may turn on more amplifiers if the power amplifier is operating in a higher power mode, and may turn on fewer amplifiers if the power amplifier is operating a lower power mode.

Abstract: Automotive heat exchanger assemblies that can withstand high environmental temperature and pressures conditions are described. By providing for a strengthened fin in contact with the tubes at the areas of highest stress, the heat exchanger assembly is strengthened to be efficient under actual operating conditions.

Abstract: This invention relates to an envelope elimination and restoration device having an input terminal for processing an input signal comprising an inphase signal and a quadrature signal.