Abstract: A gas distribution port insert, and equipment for use therewith, capable of suppressing or at least reducing process gas interaction with and/or back diffusion into a gas distribution body including the gas distribution port insert in association with a semiconductor processing tool.

Abstract: An apparatus includes a stem body and interior flow paths. The stem body has proximal and distal ends. The proximal end includes inlets, each of which is distinct and configured to receive a corresponding gas(es). The distal end is opposite the proximal end along a longitudinal axis of the stem body and configured to interface with a gas distributor. The distal end includes outlets, at least one of which is distinct. The interior flow paths include first and second interior flow paths. Each of the interior flow paths extends between a corresponding inlet among the inlets and at least one corresponding outlet among the outlets such that the interior flow paths are distinct from one another. Each of the interior flow paths includes structure(s) configured to induce turbulent flow along the longitudinal axis in response to a flow of the corresponding gas(es) along that interior flow path.

Abstract: An apparatus includes a main body having a first surface including gas distribution ports (hereinafter, “ports”). The first surface is divided into zones. The ports include: first ports distributed across a first zone among the zones, each first port being fluidically connected to a first gas inlet(s) via a corresponding first gas distribution flow path; second ports distributed across a second zone among the zones, each second port being fluidica Hy connected to a second gas inlet(s) via a corresponding second gas distribution flow path; and third ports distributed across a third zone among the zones, each third port being fluidically connected to a third gas inlet(s) via a corresponding third gas distribution flow path. The first zone separates the second and third zones from one another. Within the main body, the first gas distribution flow paths are separated from each of the second and third gas distribution flow paths.

Abstract: The present disclosure relates to a system for a semiconductor processing. The system includes a semiconductor processing chamber having a plurality of processing stations, a plurality of manifold trunks, a plurality of valves, and a plurality of fluid manifolds. Each manifold trunk includes an outlet, a common flowpath, a plurality of trunk inlets, a plurality of orifices, and a plurality of valve interfaces.

Abstract: Various embodiments herein relate to apparatuses, systems, and methods for selective control of multi-station processing chamber components. In some embodiments, a method comprises: determining for a station of a plurality of stations, a number of deposition cycles to be performed; causing a first number of deposition cycles to be performed for each of the plurality of stations by causing a first plurality of control components associated with a first station and a second plurality of control components associated with a second station to be set to a first position; and responsive to determining that the first number of deposition cycles has been completed: causing at least one component of the first plurality of control components to be changed to a second position; and causing additional deposition cycles to be performed for the second station by causing the second plurality of control components to remain in the first position.

Abstract: A showerhead assembly includes a showerhead with an upper portion including a gas channel extending in a first direction and having a first width in a second direction. A lower portion is connected to the upper portion and includes a faceplate including a plurality of gas through holes extending vertically through the faceplate in the first direction and a baffle plate arranged on a plurality of posts above the faceplate and below an outlet of the gas channel. A gas plenum is defined between the upper portion and the lower portion, extends in the second direction, and is in fluid communication with the gas channel. The showerhead assembly includes a back side gas system to supply gas to a bellows volume defined by a bellows arranged around an upper portion of the showerhead. First and second annular gas flows are supplied across an outer surface of the showerhead.

Abstract: Semiconductor processing tools with wafer back-side processing capabilities are disclosed. Such tools may be configured to only contact wafers being processed through edge contact, as opposed to underside/planar contact. Such tools may also include wafer-centering features that may allow such wafers to be precisely centered with regard to a particular wafer processing station thereof.

Abstract: A system for a dry process tool comprises one or more processing chambers, two or more processing stations being positioned within the one or more processing chambers; and a first gas source. A common manifold is coupled to the first gas source via at least a first mass flow controller. The common manifold fluidly couples the first gas source to each processing station of the two or more processing stations via a corresponding flow path. Each corresponding flow path comprises an adjustable flow valve.

Abstract: The present disclosure relates to a system for a semiconductor processing. The system includes a semiconductor processing chamber having a plurality of processing stations, a plurality of manifold trunks, a plurality of valves, and a plurality of fluid manifolds. Each manifold trunk includes an outlet, a common flowpath, a plurality of trunk inlets, a plurality of orifices, and a plurality of valve interfaces.

Abstract: Various embodiments include methods and chemistries to etch metal-oxide films. In one embodiment, a method of etching tin oxide (SnO2) films includes using thionyl chloride (SOCl2) chemistry to produce an etch rate of the SnO2 films of up to 10-times higher as compared with Cl2 chemistry for similar flow-rates and process conditions, and gettering oxygen species from the SnO2 films by using the SOCl2, thereby forming volatile SO2 and volatile SnCl4 to provide human safety and machine safety and operations. Other methods, chemistries, and techniques are disclosed.

Abstract: Various embodiments include methods and chemistries to etch metal-oxide films. In one embodiment, a method of etching tin oxide (SnO2) films includes using thionyl chloride (SOCl2) chemistry to produce an etch rate of the SnO2 films of up to 10-times higher as compared with Cl2 chemistry for similar flow-rates and process conditions, and gettering oxygen species from the SnO2 films by using the SOCl2, thereby forming volatile SO2 and volatile SnCl4 to provide human safety and machine safety and operations. Other methods, chemistries, and techniques are disclosed.

Abstract: Various embodiments include methods and chemistries to etch metal-oxide films. In one embodiment, a method of etching tin oxide (SnO2) films includes using thionyl chloride (SOCl2) chemistry to produce an etch rate of the SnO2 films of up to 10-times higher as compared with Cl2 chemistry for similar flow-rates and process conditions, and gettering oxygen species from the SnO2 films by using the SOCl2, thereby forming volatile SO2 and volatile SnCl4 to provide human safety and machine safety and operations. Other methods, chemistries, and techniques are disclosed.