Abstract: In the method of manufacturing a vertical field effect transistor, the gate region situated on either side of the source region projecting from a main face of a semiconductive substrate consists in implanting ions on either side of the source region to form a junction, and in forming a metal silicide on the gate region made in this way. Such a transistor is particularly suitable for being integrated in various MOS technologies, and in particular in CMOS.

Abstract: A bipolar transistor comprising a semiconductor substrate, of a first conductivity type, a retrograde well serving as the collector and having a second conductivity type opposite to the first, a base active region having a first conductivity type, a region serving as an emitter of the second conductivity type, the regions being bordered on either side by insulating regions. According to the invention, the transistor includes at least one second conductivity type zone serving as the collector contact, located in a region of the retrograde well at a distance from the base zone and extending away from said base zone no further than level with the insulating zone. The invention is applicable to making BI-MOS or BI-CMOS circuits.

Abstract: This process consists of producing a mask on a silicon substrate for defining the locations of the isolation zones to be formed, doping the unmasked substrate regions, thermally oxidizing said substrate regions, forming a trench in each oxidized region of the substrate and in the regions of substrate located beneath said oxidized regions thermally oxidizing the edges of the trenches, filling the trenches with an isolating dielectric and eliminating the mask.

Abstract: Integrated opto-electronic relay of the type comprising a first semiconductor layer material having a persistent photoconductivity which is deposited on a major surface of an insulating substrate and is provided with two electrical contacts, a second semiconductor layer deposited on the opposite major surface of the insulating substrate provided with two electrical contacts and functioning as both an optical radiation source when forward biased and as a thermal radiation source when reversed biased, the radiation directed onto the first semiconductor layer to induce persistent photoconductivity in the first layer when optically exposed and to eliminate the conductivity when thermally exposed, and an enclosure enabling low temperature control of the first layer having persistent photoconductivity. The invention also relates to a switching matrix incorporating a plurality of these relays.

Abstract: A method and device for depositing through vacuum evaporation. In a first step of said method, and in order to deposit a material on the substrates, the latter is placed in a vacuum enclosure opposite a target of the said material then the target is bombarded by means of an electron-beam; in the subsequent steps, the said beam is modulated and a screen opaque to X-rays is moved between the target and the substrate in synchronism with said modulation, in such manner that said screen be permanently placed between said substrates and the target impact area, and that said substrates be directly seen only from those areas of the target that have just been bombarded.

Abstract: A tangential pick-up device for a gramophone turn-table comprises a pick-up head on a support connected by a floating articulation to a carriage which is driven along a radially-disposed arm by a servo-control device to hold the support in a reference position. The floating articulation of the support, e.g. by a guided pivot member, is arranged so that shocks or vibrations tend to cause pivoting of the support about two axes disposed radial and perpendicular to a disc and intersecting adjacent the pick-up needle, whereby jumping of the needle is avoided.

Abstract: A tangential pick-up device for a gramophone turn-table comprises a pick-up head on a support connected by a floating articulation to a carriage which is driven along a radially-disposed arm by a servo-control device to hold the support in a reference position. The floating articulation of the support, e.g. by flexible suspension wires, is arranged so that shocks or vibrations tend to cause pivoting of the support about two axes disposed radial and perpendicular to a disc and intersecting adjacent the pick-up needle, whereby jumping of the needle is avoided.