Abstract: Embodiments of the present invention describe a epitaxial region on a semiconductor device. In one embodiment, the epitaxial region is deposited onto a substrate via cyclical deposition-etch process. Cavities created underneath the spacer during the cyclical deposition-etch process are backfilled by an epitaxial cap layer. The epitaxial region and epitaxial cap layer improves electron mobility at the channel region, reduces short channel effects and decreases parasitic resistance.

Abstract: Embodiments of the present invention describe a epitaxial region on a semiconductor device. In one embodiment, the epitaxial region is deposited onto a substrate via cyclical deposition-etch process. Cavities created underneath the spacer during the cyclical deposition-etch process are backfilled by an epitaxial cap layer. The epitaxial region and epitaxial cap layer improves electron mobility at the channel region, reduces short channel effects and decreases parasitic resistance.

Abstract: Embodiments of the present invention describe a epitaxial region on a semiconductor device. In one embodiment, the epitaxial region is deposited onto a substrate via cyclical deposition-etch process. Cavities created underneath the spacer during the cyclical deposition-etch process are backfilled by an epitaxial cap layer. The epitaxial region and epitaxial cap layer improves electron mobility at the channel region, reduces short channel effects and decreases parasitic resistance.

Abstract: Embodiments of the present invention describe a epitaxial region on a semiconductor device. In one embodiment, the epitaxial region is deposited onto a substrate via cyclical deposition-etch process. Cavities created underneath the spacer during the cyclical deposition-etch process are backfilled by an epitaxial cap layer. The epitaxial region and epitaxial cap layer improves electron mobility at the channel region, reduces short channel effects and decreases parasitic resistance.

Abstract: Embodiments of the present invention describe a epitaxial region on a semiconductor device. In one embodiment, the epitaxial region is deposited onto a substrate via cyclical deposition-etch process. Cavities created underneath the spacer during the cyclical deposition-etch process are backfilled by an epitaxial cap layer. The epitaxial region and epitaxial cap layer improves electron mobility at the channel region, reduces short channel effects and decreases parasitic resistance.

Abstract: The present invention is directed towards the synthesis and/or use of a mixture of analyte capture reagents comprising antibodies and a non-immunological reagent provided on a solid phase assay, selected to screen for very high and low levels of an analyte. The non-immunological reagent comprising a PC-conjugate that contains multiple copies of covalently coupled phosphorylcholine (PC) moieties, particularly towards a phosphorylcholine-thyroglobulin conjugate assaying for C-reactive protein (CRP), a known inflammatory marker. The mixture of capture reagents function to eliminate hook effect (i.e. false negatives) when CRP is present in sample at high concentrations.

Abstract: The present invention includes methods of determining the volume of liquid dispensed by a dispenser. Initially, a refractive index analysis is preformed on a first liquid that has been dispensed from the dispenser in question. From the refractive index analysis, information is obtained about the volume of first liquid dispensed. The invention also includes methods for verifying the volumetric accuracy of a dispenser. The methods include dispensing a first liquid having a known refractive index into a vessel having a second liquid with a known volume and a known refractive index to form a test mixture. The refractive index of the test mixture is measured and then correlated with the refractive index of the first liquid to obtain information about the volume of first liquid dispensed. The dispensed volume is then compared to the theoretical volume of liquid dispensed by the dispenser.