Abstract: A load control system may control an electrical load in a space of a building based on one or more parameters regarding the physical condition of an occupant. The parameters may be gathered by one or more sensing devices. The sensing devices may be included in a mobile device. A system controller may receive the parameters and may automatically control the electrical loads in response to the parameters. The system controller may control the electrical load to attempt to adjust the physical condition of the occupant in response to the sensed parameters. The system controller may control the electrical load to provide an alert, an alarm, and/or a warning in response to the sensed parameters.

Abstract: A bonded optical assembly comprising infrared-transparent materials. The assembly comprises two or more infrared transparent optical elements and a polymer comprising at least one chalcogenide element and crosslinking moieties between the infrared-transparent optical elements. The crosslinking moieties may be organic, inorganic, or both.

Abstract: In the manufacture of a semiconductor device, an arrangement for forming a layer on a semiconductor substrate compensates for variations in wafer substrate reflectivity. The arrangement includes providing substrate illumination and then adjusting the illumination on the substrate. The arrangement also includes controlling the dispensation of material over the substrate as a function of the adjusted illumination. By compensating for variations in wafer substrate reflectivity, manufacturing processes can realize more consistent photoresist coatings on wafer substrates from one wafer lot to another.

Abstract: In one example embodiment, a method of forming a pattern in a photoresist material includes illuminating a portion of the photoresist material according to the pattern and positioning a filter in a path of the light. The filter includes a number of regions upon which a filtering material has been. The filtering material has a variable characteristic that is independently adjustable for each region to enhance the uniformity of the intensity of the light. Such characteristics include the thickness of the filtering material, the size of the portion of the region that is covered by the filtering material, or a voltage, current, electric field, or magnetic field applied to the filtering material of each region.

Abstract: A system and method is disclosed for enhancing an optical lithography process by capturing light diffracted from a mask having features to be exposed onto a wafer. In one embodiment, a system of the present invention has in place a mask, a wafer and a reduction lens such that the reduction lens is placed between the mask and the wafer in order to direct and expose the mask's features onto the wafer. Furthermore, a reflective member is disposed proximate to the reduction lens. In order to achieve finer resolution of the mask image on the wafer, this reflective member captures diffracted light diffracting beyond the reduction lens and redirects the diffracted light to pass through the reduction lens such that the diffracted light is redirected onto the wafer. In so doing, the reflective member resolves the mask image on the wafer in more detail than is possible by an optical lithography process using no such reflective member.

Abstract: In the manufacture of a semiconductor device, an arrangement for forming a layer on a semiconductor substrate compensates for variations in wafer substrate reflectivity. The arrangement includes providing substrate illumination and then adjusting the illumination on the substrate. The arrangement also includes controlling the dispensation of material over the substrate as a function of the adjusted illumination. By compensating for variations in wafer substrate reflectivity, manufacturing processes can realize more consistent photoresist coatings on wafer substrates from one wafer lot to another.

Abstract: In the manufacture of a semiconductor device, a method for forming a layer on a semiconductor substrate compensates for variations in wafer substrate reflectivity. The method includes providing substrate illumination and then adjusting the illumination on the substrate. The method also includes controlling the dispensation of material over the substrate as a function of the adjusted illumination. By compensating for variations in wafer substrate reflectivity, manufacturing processes can realize more consistent photoresist coatings on wafer substrates from one wafer lot to another.

Abstract: The present invention is directed to a method and apparatus for detecting edges through one or more opaque, planarized layers of material. Exemplary embodiments can take full advantage of decreased size geometries associated, such as 0.25 micron technologies, without suffering inaccuracies due to wafer misalignment during processing (e.g., during a photolithographic process). The invention is applicable to any process where an edge is to be detected through a planarized layer which is opaque to visible light. In an exemplary embodiment, an edge of an alignment mark can be detected using an energy source having a wavelength and angle of incidence specifically selected with respect to the optical characteristics and thickness of particular material layers being processed.

Abstract: In one example embodiment, a method of forming a pattern in a photoresist material includes illuminating a portion of the photoresist material according to the pattern and positioning a filter in a path of the light. The filter includes a number of regions upon which a filtering material has been. The filtering material has a variable characteristic that is independently adjustable for each region to enhance the uniformity of the intensity of the light. Such characteristics include the thickness of the filtering material, the size of the portion of the region that is covered by the filtering material, or a voltage, current, electric field, or magnetic field applied to the filtering material of each region.

Abstract: An apparatus for forming a pattern in a photoresist material includes a light source to provide light for illuminating a portion of the photoresist material according to the pattern and a filter positioned in a path of the light. The filter includes a number of regions upon which a filtering material has been. The filtering material has a variable characteristic that is independently adjustable for each region to enhance the uniformity of the intensity of the light. Such characteristics include the thickness of the filtering material, the size of the portion of the region that is covered by the filtering material, or a voltage, current, electric field, or magnetic field applied to the filtering material of each region.

Abstract: Disclosed is a method for making a metallization layered stack over an oxide layer of a semiconductor substrate, and a metallization layered stack that assists in providing superior deep UV photolithography resolution. The method includes forming a bottom titanium nitride layer over the oxide layer, and forming an aluminum metallization layer over the bottom titanium nitride layer. The method further includes forming a top titanium nitride layer over the aluminum metallization layer, such that the forming of the top titanium nitride layer includes: (a) placing the semiconductor substrate in an ionized metal plasma chamber having an RF powered coil and a titanium target; (b) introducing an argon gas and a nitrogen gas into the ionized metal plasma chamber; (c) pressuring up the ionized metal plasma chamber to a pressure of between about 10 mTorr and about 50 mTorr, whereby the top titanium nitride layer is formed as a dense titanium nitride film.

Abstract: A method and apparatus for the alignment of a semiconductor device in preparation for patterning a layer of the device includes using an alignment apparatus which has one or more light sources for producing light at two or more alignment wavelengths. Typically, the semiconductor device will include alignment structures that are to be aligned with corresponding alignment markers on a photomask which contains the desired pattern. The alignment structures on the semiconductor device are often depressions or trenches in a layer of the device. The alignment apparatus determines the position of the alignment structures by observing the contrast in the intensity of light reflected off the region of the device containing the alignment structure and the region of the device adjacent to the alignment structure. This contrast in the intensity of light is wavelength dependent.

Abstract: The present invention is directed to a method and apparatus for detecting edges through one or more opaque, planarized layers of material. Exemplary embodiments can take full advantage of decreased size geometries associated, such as 0.25 micron technologies, without suffering inaccuracies due to wafer misalignment during processing (e.g., during a photolithographic process). The invention is applicable to any process where an edge is to be detected through a planarized layer which is opaque to visible light. In an exemplary embodiment, an edge of an alignment mark can be detected using an energy source having a wavelength and angle of incidence specifically selected with respect to the optical characteristics and thickness of particular material layers being processed.

Abstract: A process for the treatment of a gas stream derived from the gasification of coal is described, the process being characterized, in one embodimment, by stripping of the wash and cooling liquid used to cool and remove NH.sub.3 from the synthesis gas prior to reuse of the liquid in removal of residual solids from the product gas stream, thereby avoiding incompatibilities which may initiate or aggravate chemical precipitation, particularly that of CaCO.sub.3.

Abstract: A process for the treatment of flyslag from the gasification of coal is described, the process being characterized, in one embodiment, by mixing of the flyslag with a cementitious material and a residual waste stream from a coal gasification process, the waste stream containing particulate flyslag solids. A composition comprising flyslag and a cementitious material, in specified proportions is also disclosed.

Abstract: A process for the treatment of flyslag from the gasification of coal is described, the process being characterized, in one embodiment, by mixing of the flyslag with a residual waste stream from a coal gasification process, the wast stream containing particulate flyslag solids.

Abstract: A process for production of a flyash-slag composite is described in which, in one embodiment, slag particles are tumbled with an aqueous suspension of finely divided clay, flyash and a cementitious material are added, and the mixture is tumbled to produce the desired composite.

Abstract: Method and apparatus for clarifying bottled wine by riddling in which the bottles of wine are positioned in generally neck-down inverted position and are subjected to abrupt limited generally vertical force capable of dislodging sediment and solids from adherence to the interior surfaces of the bottles. The apparatus accomplishes the abrupt limited generally vertical force by either lifting and dropping a platform upon which cases of bottles are positioned, or bumping the platform from below. Control means automatically cycles the jouncing action, and supplementary vibratory action, through periods of timed duration and at desired frequencies and amplitudes, the bottles being allowed to remain quiescent for desired periods of time between jouncing actions.

Abstract: Hydrogen selenide is removed from a liquid stream by treatment with a disulfide or polysulfide to oxidize it to elemental selenium.

Abstract: Hydrogen selenide is removed from a liquid stream by precipitation as a heavy metal selenide.