Abstract: A pathogen detection method. A sample that potentially contains a pathogen is collected. A triangle wave form output is produced. A signal associated with the triangle wave form is transmitted from a voltage-controlled oscillator over a plurality of frequencies. The signal is transmitted through the sample to cause the pathogen in the sample to vibrate at a frequency. The vibrations from the sample are detected. A resonance profile of a pathogen in the sample is calculated based upon the vibrations. A database that includes a resonance profile signature of at least one pathogens is provided. The calculated resonance profile is compared to the resonance profile signature database to determine if the sample includes the pathogen.

Abstract: While a qubit control system (e.g., a laser system) is in a first configuration, it causes a qubit state (as represented as a point on the surface of a Bloch sphere) of a quantum state carrier (QSC), e.g., an atom, to rotate in a first direction from an initial qubit state to a first configuration qubit state. While the qubit control system is in a second configuration, it causes the QSC state to rotate in a second direction opposite the first direction from the first configuration qubit state to a second configuration qubit state. The second configuration qubit state is read out as a |0 or |1. Repeating these actions results in a distribution of |0s and |1s that can be used to determine which of the two configurations results in higher Rabi frequencies. Iterating the above for other pairs of configurations can identify a configuration that delivers the most power to the QSC and thus yields the highest Rabi frequency.

Abstract: A system for transmitting power and data between two circuit boards may include a fixed circuit board having a primary coil and a rotatable circuit board having a secondary coil. The system may further include a sensor in communication with the secondary coil of the rotatable circuit board. The fixed circuit board's primary coil may be inductively coupled to the secondary coil and may provide power and receive data from the sensor when inductively coupled to the secondary coil.

Abstract: While a qubit control system (e.g., a laser system) is in a first configuration, it causes a qubit state (as represented as a point on the surface of a Bloch sphere) of a quantum state carrier (QSC), e.g., an atom, to rotate in a first direction from an initial qubit state to a first configuration qubit state. While the qubit control system is in a second configuration, it causes the QSC state to rotate in a second direction opposite the first direction from the first configuration qubit state to a second configuration qubit state. The second configuration qubit state is read out as a |0? or |1?. Repeating these actions results in a distribution of |0?s and |1?s that can be used to determine which of the two configurations results in higher Rabi frequencies. Iterating the above for other pairs of configurations can identify a configuration that delivers the most power to the QSC and thus yields the highest Rabi frequency.

Abstract: A method and structure for creating a photomask data set includes inputting a design data set, creating a simulated printed data set by applying a lithography simulation model to chosen levels of the design data set, merging each chosen level of the design data set with each corresponding level of the simulated printed data set in order to produce a merged design data set, applying at least one test to the merged design data set, correcting the design data set based on results of the test to produce a corrected design data set, repeating the creating of the simulated printed data, merging, applying the test and correcting using the corrected design data set until the corrected design data set passes the test, and outputting the corrected design data set as the photomask data set.

Abstract: A method and structure for a photomask that includes a substrate having a first transmittance, a first pattern to be transferred to a photosensitive layer (the first pattern having a second transmittance lower than the first transmittance) and a second pattern having a third transmittance greater than the second transmittance and less than the first transmittance. The second pattern is adjacent at least a portion of the first pattern, and the substrate and the second pattern transmit light substantially in phase.

Abstract: A method and structure for a photomask that includes a substrate having a first transmittance, a first pattern to be transferred to a photosensitive layer (the first pattern having a second transmittance lower than the first transmittance) and a second pattern having a third transmittance greater than the second transmittance and less than the first transmittance. The second pattern is adjacent at least a portion of the first pattern, and the substrate and the second pattern transmit light substantially in phase.

Abstract: A method and structure for a photomask that includes a substrate having a first transmittance, a first pattern to be transferred to a photosensitive layer (the first pattern having a second transmittance lower than the first transmittance) and a second pattern having a third transmittance greater than the second transmittance and less than the first transmittance. The second pattern is adjacent at least a portion of the first pattern, and the substrate and the second pattern transmit light substantially in phase.

Abstract: A structure and method of designing an integrated circuit includes generating at least one device shape, altering the device shape to comply with predetermined rules, forming a first hierarchical level abstraction around the device shape (where the first hierarchical level abstraction represents a perimeter of the device shape), preparing a first hierarchical level arrangement of first hierarchical level abstractions, altering the first hierarchical level arrangement to comply with the predetermined rules, forming a second hierarchical level abstraction around the first hierarchical level arrangement (where the second hierarchical level abstraction represents a perimeter of the first hierarchical level arrangement), preparing a second hierarchical level arrangement of second hierarchical level abstractions, and altering the second hierarchical level arrangement to comply with the predetermined rules.

Abstract: A method and computer system are provided for checking integrated circuit designs for design rule violations. The method may include generating a working design data set, creating a wafer image data set, comparing the wafer image data set to the design rules to produce an error list and automatically altering the working design data set when the comparing indicates a design rule violation. The method further automatically repeats the creating, the comparing and the automatically altering until no design rule violations occur or no solution to the errors exists.

Abstract: The present invention provides a method of forming nested and isolated images in a photosensitive resist. In the disclosed method, the entire surface of the photosensitive resist or selected regions thereof is exposed to a first mask having a set of nested, i.e. repeating pattern or grid images thereon, and then exposed to a second mask in order to remove unwanted portions of the nested image, so as to provide regions of nested and regions of isolated images in said photosensitive resist. The method may also be used to form regions having images in proximity to one another and regions having isolated images by exposing the entire surface of the photosensitive resist to a first mask having repeating patterns, and then removing entire or portions of the repeating patterns by exposure of the photosensitive resist with a second mask.

Abstract: A structure and method for checking semiconductor designs for design rule violations includes generating a predicted printed structure (i.e., an ideal image) based on the semiconductor designs, altering the ideal image to include potential manufacturing variations, thereby producing at least two production images representing different manufacturing qualities, and comparing the production images to the design rules to produce an error list.

Abstract: A method and structure for a photomask that includes a substrate having a first transmittance, a first pattern to be transferred to a photosensitive layer (the first pattern having a second transmittance lower than the first transmittance) and a second pattern having a third transmittance greater than the second transmittance and less than the first transmittance. The second pattern is adjacent at least a portion of the first pattern, and the substrate and the second pattern transmit light substantially in phase.

Abstract: The present invention provides a method of forming nested and isolated images in a photosensitive resist. In the disclosed method, the entire surface of the photosensitive resist or selected regions thereof is exposed to a first mask having a set of nested, i.e. repeating pattern or grid images thereon, and then exposed to a second mask in order to remove unwanted portions of the nested image, so as to provide regions of nested and regions of isolated images in said photosensitive resist. The method may also be used to form regions having images in proximity to one another and regions having isolated images by exposing the entire surface of the photosensitive resist to a first mask having repeating patterns, and then removing entire or portions of the repeating patterns by exposure of the photosensitive resist with a second mask.

Abstract: The distribution of ultraviolet light irradiated from an illumination source to optical elements of a projection exposure device is varied by an illumination aperture. The illumination aperture is formed with a plurality of openings which may be opened or closed independently to the passage of irradiating light. The size and shape of the opening formed by the plurality of openings of the illumination aperture is determined according to the particular image to be projected.

Abstract: A method is presented here that enables one to improve the prediction for the printed structures of circuit patterns in a microchip, thereby potentially aiding in the design of the microchip circuitry. This method comprises the steps of determining, by applying process bias and corner curvature rules to a real mask image, a simulated structure for the mask used in optical projection lithography; and determining, by applying optical and process proximity correction rules to said simulated mask structure, a more accurate prediction for the structures printed on the wafer. Preferably the simulated mask structure is determined by applying a symmetric bias consistent with a mask build process to the real mask image, adjusting predetermined features of the real mask image such as corners or narrow lines, and applying a reverse symmetric bias to the adjusted real mask image.

Abstract: A transmission controlled mask (TCM) for providing effective and accurate printing of images on a semiconductor wafer is defined. The transmission controlled mask (TCM) of the present invention includes opaque regions, clear regions, and transmission controlled (TC) regions, each region have different transmittance for reducing and/or eliminating the foreshortening which occurs in image printing. By employing the TCM of the present invention and adjusting the exposure time, images of lines and holes may be printed correctly with the same mask. The TCM of the present invention comprises a quartz substrate having a carbon layer and a chrome layer deposited on its surface.