Patents by Inventor Daniel C. Wack
Daniel C. Wack has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11968772Abstract: An optical characterization system is disclosed. The optical characterization system may comprise a synchrotron source, an optical characterization sub-system, and a sensor configured to receive a projected image from a set of imaging optics. The optical characterization sub-system may include at least the set of illumination optics, a set of imaging optics, and a diffractive optical element, a temporal modulator or an optical waveguide configured to match an etendue of a light beam output by the synchrotron source to the set of illumination optics. A method of matching the etendue of a light beam is also disclosed.Type: GrantFiled: April 29, 2020Date of Patent: April 23, 2024Assignee: KLA CorporationInventors: Zefram Marks, Larissa Juschkin, Daniel C. Wack
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Patent number: 11469571Abstract: An acousto-optic modulator (AOM) laser frequency shifter system includes a laser configured to generate an incident beam, a first optical splitter optically coupled to the laser and configured to split the incident beam into at least one portion of the incident beam, at least one phase-shift channel optically coupled to the first optical splitter and configured to generate at least one frequency-shifted beam with an acousto-optic modulator (AOM) from the at least one portion of the incident beam received from the first optical splitter, and a second optical splitter configured to receive the at least one frequency-shifted beam from the at least one phase-shift channel and configured to direct the at least one frequency-shifted beam to an interferometer configured to acquire an interferogram of a sample with the at least one frequency-shifted beam.Type: GrantFiled: November 5, 2020Date of Patent: October 11, 2022Assignee: KLA CorporationInventors: Haifeng Huang, Rui-Fang Shi, Daniel C. Wack
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Patent number: 11112691Abstract: An inspection system includes an illumination source configured to generate extreme ultraviolet (EUV) light, illumination optics to direct the EUV light to a sample within a range of off-axis incidence angles corresponding to an illumination pupil distribution, collection optics to collect light from the sample in response to the incident EUV light within a range of collection angles corresponding to an imaging pupil distribution, and a detector configured to receive at least a portion of the light collected by the collection optics. Further, a center of the illumination pupil distribution corresponds to an off-axis incidence angle along a first direction on the sample, and at least one of the illumination pupil distribution or the imaging pupil distribution is non-circular with a size along the first direction shorter than along a second direction perpendicular to the first direction.Type: GrantFiled: January 25, 2019Date of Patent: September 7, 2021Assignee: KLA CorporationInventors: Damon F. Kvamme, Rui-fang Shi, Daniel C. Wack, Sseunhyeun Jo, Xin Ye
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Publication number: 20210159667Abstract: An acousto-optic modulator (AOM) laser frequency shifter system includes a laser configured to generate an incident beam, a first optical splitter optically coupled to the laser and configured to split the incident beam into at least one portion of the incident beam, at least one phase-shift channel optically coupled to the first optical splitter and configured to generate at least one frequency-shifted beam with an acousto-optic modulator (AOM) from the at least one portion of the incident beam received from the first optical splitter, and a second optical splitter configured to receive the at least one frequency-shifted beam from the at least one phase-shift channel and configured to direct the at least one frequency-shifted beam to an interferometer configured to acquire an interferogram of a sample with the at least one frequency-shifted beam.Type: ApplicationFiled: November 5, 2020Publication date: May 27, 2021Applicant: KLA CorporationInventors: Haifeng Huang, Rui-Fang Shi, Daniel C. Wack
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Publication number: 20200383200Abstract: An optical characterization system is disclosed. The optical characterization system may comprise a synchrotron source, an optical characterization sub-system, and a sensor configured to receive a projected image from a set of imaging optics. The optical characterization sub-system may include at least the set of illumination optics, a set of imaging optics, and a diffractive optical element, a temporal modulator or an optical waveguide configured to match an etendue of a light beam output by the synchrotron source to the set of illumination optics. A method of matching the etendue of a light beam is also disclosed.Type: ApplicationFiled: April 29, 2020Publication date: December 3, 2020Inventors: Zefram Marks, Larissa Juschkin, Daniel C. Wack
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Publication number: 20200225574Abstract: An inspection system includes an illumination source configured to generate extreme ultraviolet (EUV) light, illumination optics to direct the EUV light to a sample within a range of off-axis incidence angles corresponding to an illumination pupil distribution, collection optics to collect light from the sample in response to the incident EUV light within a range of collection angles corresponding to an imaging pupil distribution, and a detector configured to receive at least a portion of the light collected by the collection optics. Further, a center of the illumination pupil distribution corresponds to an off-axis incidence angle along a first direction on the sample, and at least one of the illumination pupil distribution or the imaging pupil distribution is non-circular with a size along the first direction shorter than along a second direction perpendicular to the first direction.Type: ApplicationFiled: January 25, 2019Publication date: July 16, 2020Inventors: Damon F. Kvamme, Rui-fang Shi, Daniel C. Wack, Sseunhyeun Jo, Xin Ye
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Patent number: 9544984Abstract: An EUV light source includes a rotatable, cylindrically-symmetric element having a surface coated with a plasma-forming target material, a drive laser source configured to generate one or more laser pulses sufficient to generate EUV light via formation of a plasma by excitation of the plasma-forming target material, a set of focusing optics configured to focus the one or more laser pulses onto the surface of the rotatable, cylindrically-symmetric element, a set of collection optics configured to receive EUV light emanated from the generated plasma and further configured to direct the illumination to an intermediate focal point, and a gas management system including a gas supply subsystem configured to supply plasma-forming target material to the surface of the rotatable, cylindrically-symmetric element.Type: GrantFiled: July 18, 2014Date of Patent: January 10, 2017Assignee: KLA-Tencor CorporationInventors: Alexander Bykanov, Oleg Khodykin, Daniel C. Wack, Konstantin Tsigutkin, Layton Hale, Joseph Walsh, Frank Chilese, Rudy F. Garcia, Brian Ahr
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Publication number: 20150076359Abstract: An EUV light source includes a rotatable, cylindrically-symmetric element having a surface coated with a plasma-forming target material, a drive laser source configured to generate one or more laser pulses sufficient to generate EUV light via formation of a plasma by excitation of the plasma-forming target material, a set of focusing optics configured to focus the one or more laser pulses onto the surface of the rotatable, cylindrically-symmetric element, a set of collection optics configured to receive EUV light emanated from the generated plasma and further configured to direct the illumination to an intermediate focal point, and a gas management system including a gas supply subsystem configured to supply plasma-forming target material to the surface of the rotatable, cylindrically-symmetric element.Type: ApplicationFiled: July 18, 2014Publication date: March 19, 2015Inventors: Alexander Bykanov, Oleg Khodykin, Daniel C. Wack, Konstantin Tsigutkin, Layton Hale, Joseph Walsh, Frank Chilese
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Patent number: 8941336Abstract: A compact synchrotron radiation source includes an electron beam generator, an electron storage ring, one or more wiggler insertion devices disposed along one or more straight sections of the electron storage ring, the one or more wiggler insertion devices including a set of magnetic poles configured to generate a periodic alternating magnetic field suitable for producing synchrotron radiation emitted along the direction of travel of the electrons of the storage ring, wherein the one or more wiggler insertion devices are arranged to provide light to a set of illumination optics of a wafer optical characterization system or a mask optical characterization system, wherein the etendue of a light beam emitted by the one or more wiggler insertion devices is matched to the illumination optics of the at least one of a wafer optical characterization system and the mask optical characterization system.Type: GrantFiled: June 9, 2014Date of Patent: January 27, 2015Assignee: KLA-Tencor CorporationInventors: Yanwei Liu, Daniel C. Wack
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Patent number: 8842272Abstract: One embodiment relates to an apparatus that includes an illumination source (102) for illuminating a target substrate (106), objective optics (108) for projecting the EUV light which is reflected from the target substrate, and a sensor (110) for detecting the projected EUV light. The objective optics includes a first mirror (202,302, or 402) which is arranged to receive and reflect the EUV light which is reflected from the target substrate, a second mirror (204, 304, or 404) which is arranged to receive and reflect the EUV light which is reflected by the first mirror, a third mirror (206, 306, or 406) which is arranged to receive and reflect the EUV light which is reflected by the second mirror, and a fourth mirror (208, 308, or 408) which is arranged to receive and reflect the EUV light which is reflected by the third mirror.Type: GrantFiled: January 6, 2012Date of Patent: September 23, 2014Assignee: KLA-Tencor CorporationInventors: Daniel C. Wack, Damon F. Kvamme, John R. Rogers, James P. McGuire, Jr., John M. Rodgers
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Patent number: 8749179Abstract: A compact synchrotron radiation source includes an electron beam generator, an electron storage ring, one or more wiggler insertion devices disposed along one or more straight sections of the electron storage ring, the one or more wiggler insertion devices including a set of magnetic poles configured to generate a periodic alternating magnetic field suitable for producing synchrotron radiation emitted along the direction of travel of the electrons of the storage ring, wherein the one or more wiggler insertion devices are arranged to provide light to a set of illumination optics of a wafer optical characterization system or a mask optical characterization system, wherein the etendue of a light beam emitted by the one or more wiggler insertion devices is matched to the illumination optics of the at least one of a wafer optical characterization system and the mask optical characterization system.Type: GrantFiled: August 12, 2013Date of Patent: June 10, 2014Assignee: KLA-Tencor CorporationInventors: Yanwei Liu, Daniel C. Wack
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Publication number: 20140048707Abstract: A compact synchrotron radiation source includes an electron beam generator, an electron storage ring, one or more wiggler insertion devices disposed along one or more straight sections of the electron storage ring, the one or more wiggler insertion devices including a set of magnetic poles configured to generate a periodic alternating magnetic field suitable for producing synchrotron radiation emitted along the direction of travel of the electrons of the storage ring, wherein the one or more wiggler insertion devices are arranged to provide light to a set of illumination optics of a wafer optical characterization system or a mask optical characterization system, wherein the etendue of a light beam emitted by the one or more wiggler insertion devices is matched to the illumination optics of the at least one of a wafer optical characterization system and the mask optical characterization system.Type: ApplicationFiled: August 12, 2013Publication date: February 20, 2014Applicant: KLA-Tencor CorporationInventors: Yanwei Liu, Daniel C. Wack
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Publication number: 20130083321Abstract: One embodiment relates to an apparatus that includes an illumination source (102) for illuminating a target substrate (106), objective optics (108) for projecting the EUV light which is reflected from the target substrate, and a sensor (110) for detecting the projected EUV light. The objective optics includes a first mirror (202,302, or 402) which is arranged to receive and reflect the EUV light which is reflected from the target substrate, a second mirror (204, 304, or 404) which is arranged to receive and reflect the EUV light which is reflected by the first mirror, a third mirror (206, 306, or 406) which is arranged to receive and reflect the EUV light which is reflected by the second mirror, and a fourth mirror (208, 308, or 408) which is arranged to receive and reflect the EUV light which is reflected by the third mirror.Type: ApplicationFiled: January 6, 2012Publication date: April 4, 2013Applicant: KLA-TENCOR CORPORATIONInventors: Daniel C. Wack, Damon F. Kvamme, John R. Rogers, James P. McGuire, JR., John M. Rodgers
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Patent number: 8045179Abstract: Line edge roughness or line width roughness of a feature on a sample may be determined from incident radiation scattered from the feature. An amount of ordered scattered radiation characterized by a discrete diffraction order is determined and a diffuse scattered radiation signal is measured. A ratio between an intensity of the ordered scattered incident radiation and an intensity of the diffuse scattered radiation signal is determined. The line edge roughness or line width roughness is determined from the ratio.Type: GrantFiled: November 20, 2008Date of Patent: October 25, 2011Assignee: KLA-Tencor CorporationInventors: Guorong Vera Zhuang, Steven R. Spielman, Leonid Poslavsky, Daniel C. Wack, John Fielden
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Patent number: 7951672Abstract: A method that includes measuring stress on at least one of a monitor substrate, a production substrate, and a proxy device on a production substrate to produce stress data, measuring shape on at least one of a proxy device on a production substrate and a production device on a production substrate to produce shape data, and inputting the stress data and the shape data into an elastic deformation calculation to determine a stress value for a production device.Type: GrantFiled: October 14, 2010Date of Patent: May 31, 2011Assignee: KLA-Tencor CorporationInventors: Daniel C. Wack, Ady Levy, John Fielden
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Publication number: 20110027919Abstract: A method that includes measuring stress on at least one of a monitor substrate, a production substrate, and a proxy device on a production substrate to produce stress data, measuring shape on at least one of a proxy device on a production substrate and a production device on a production substrate to produce shape data, and inputting the stress data and the shape data into an elastic deformation calculation to determine a stress value for a production device.Type: ApplicationFiled: October 14, 2010Publication date: February 3, 2011Applicant: KLA-TENCOR CORPORATIONInventors: Daniel C. Wack, Ady Levy, John Fielden
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Patent number: 7838309Abstract: A method that includes measuring stress on at least one of a monitor substrate, a production substrate, and a proxy device on a production substrate to produce stress data, measuring shape on at least one of a proxy device on a production substrate and a production device on a production substrate to produce shape data, and inputting the stress data and the shape data into an elastic deformation calculation to determine a stress value for a production device.Type: GrantFiled: August 27, 2008Date of Patent: November 23, 2010Assignee: KLA-Tencor CorporationInventors: Daniel C. Wack, Ady Levy, John Fielden
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Patent number: 7826072Abstract: The present application discloses a method of model-based measurement of semiconductor device features using a scatterometer system. The method includes at least the following steps. A cost function is defined depending upon a plurality of variable parameters of the scatterometer system and upon a plurality of variable parameters for computer-implemented modeling to determine measurement results. Constraints are established for the plurality of variable parameters of the scatterometer system and for the plurality of variable parameters for the computer-implemented modeling. A computer-implemented optimization procedure is performed to determine an optimized global set of parameters, including both the variable parameters of the scatterometer system and the variable parameters for the computer-implemented modeling, which result in a minimal value of the cost function. Finally, the optimized global set of parameters is applied to configure the scatterometer system and the computer-implemented modeling.Type: GrantFiled: December 6, 2007Date of Patent: November 2, 2010Assignee: KLA-Tencor Technologies CorporationInventors: Daniel C. Wack, Andrei Veldman, Edward R. Ratner, John Hench, Noah Bareket
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Patent number: 7826071Abstract: A gallery of seed profiles is constructed and the initial parameter values associated with the profiles are selected using manufacturing process knowledge of semiconductor devices. Manufacturing process knowledge may also be used to select the best seed profile and the best set of initial parameter values as the starting point of an optimization process whereby data associated with parameter values of the profile predicted by a model is compared to measured data in order to arrive at values of the parameters. Film layers over or under the periodic structure may also be taken into account. Different radiation parameters such as the reflectivities Rs, Rp and ellipsometric parameters may be used in measuring the diffracting structures and the associated films. Some of the radiation parameters may be more sensitive to a change in the parameter value of the profile or of the films then other radiation parameters.Type: GrantFiled: October 8, 2007Date of Patent: November 2, 2010Assignee: KLA-Tencor CorporationInventors: Andrei V. Shchegrov, Anatoly Fabrikant, Mehrdad Nikoonahad, Ady Levy, Daniel C. Wack, Noah Bareket, Walter Mieher, Ted Dziura
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Patent number: 7821654Abstract: Instead of constructing a full multi-dimensional look-up-table as a model to find the critical dimension or other parameters in scatterometry, regression or other optimized estimation methods are employed starting from a “best guess” value of the parameter. Eigenvalues of models that are precalculated may be stored and reused later for other structures having certain common characteristics to save time. The scatterometric data that is used to find the value of the one or more parameter can be limited to those at wavelengths that are less sensitive to the underlying film characteristics. A model for a three-dimensional grating may be constructed by slicing a representative structure into a stack of slabs and creating an array of rectangular blocks to approximate each slab. One dimensional boundary problems may be solved for each block which are then matched to find a two-dimensional solution for the slab.Type: GrantFiled: March 24, 2009Date of Patent: October 26, 2010Assignee: KLA-Tencor CorporationInventors: Anatoly Fabrikant, Guoheng Zhao, Daniel C. Wack, Mehrdad Nikoonahad