Abstract: A device for contactlessly determining the straightness of at least one long product, where punctiform or linear measuring radiation is moved by a radiation source module over the long product at least transversely to the longitudinal direction of the long product during a measuring cycle. The intensity of detection radiation coming from an area of incidence of the measuring radiation is recorded by a radiation detection module in a time-resolved manner and is supplied to a control and evaluation unit. The spatial position of the areas of incidence and thus the straightness of a long product can be determined from location information regarding the areas of incidence in the longitudinal direction and from characteristic intensity values of the detection radiation. For a calibration, a reference straightness can be determined by carrying out multiple measuring cycles by rotating a long product of unknown straightness.

Abstract: A device for contactlessly determining the straightness of at least one long product, where punctiform or linear measuring radiation is moved by a radiation source module over the long product at least transversely to the longitudinal direction of the long product during a measuring cycle. The intensity of detection radiation coming from an area of incidence of the measuring radiation is recorded by a radiation detection module in a time-resolved manner and is supplied to a control and evaluation unit. The spatial position of the areas of incidence and thus the straightness of a long product can be determined from location information regarding the areas of incidence in the longitudinal direction and from characteristic intensity values of the detection radiation. For a calibration, a reference straightness can be determined by carrying out multiple measuring cycles by rotating a long product of unknown straightness.

Abstract: System and methods are provided for identifying, searching, collecting, locking, executing deleting, comparing and/or analyzing data from a plurality of computer devices and environments from a centralized interface. The endpoint computer devices utilize an agent to index data contained on each device and that allows for a distributed action model using simple or advanced analytics by authenticated users. The agent can be embedded in an integrated circuit of the endpoint computing device or otherwise stored in permanent read only memory (i.e., firmware). The system allows for one or more users to conduct actions via device indexes utilizing a centralized computing device for comparison and analyzation purposes.

Abstract: System and methods are provided for identifying, searching, collecting, locking, executing deleting, comparing and/or analyzing data from a plurality of computer devices and environments from a centralized interface. The endpoint computer devices utilize an agent to index data contained on each device and that allows for a distributed action model using simple or advanced analytics by authenticated users. The agent can be embedded in an integrated circuit of the endpoint computing device or otherwise stored in permanent read only memory (i.e., firmware). The system allows for one or more users to conduct actions via device indexes utilizing a centralized computing device for comparison and analyzation purposes.

Abstract: System and methods are provided for identifying, searching, collecting, locking, executing deleting, comparing and/or analyzing data from a plurality of computer devices and environments from a centralized interface. The endpoint computer devices utilize an agent to index data contained on each device and that allows for a distributed action model using simple or advanced analytics by authenticated users. The agent can be embedded in an integrated circuit of the endpoint computing device or otherwise stored in permanent read only memory (i.e., firmware). The system allows for one or more users to conduct actions via device indexes utilizing a centralized computing device for comparison and analyzation purposes.

Abstract: System and methods are provided for identifying, searching, collecting, locking, executing deleting, comparing and/or analyzing data from a plurality of computer devices and environments from a centralized interface. The endpoint computer devices utilize an agent to index data contained on each device and that allows for a distributed action model using simple or advanced analytics by authenticated users. The system allows for one or more users to conduct actions via device indexes utilizing a centralized computing device for comparison and analyzation purposes.

Abstract: An article of manufacture and apparatus are provided for processing a substrate surface. In one aspect, an article of manufacture is provided for polishing a substrate including polishing article comprising a body having at least a partially conductive polishing surface. An electrode is disposed below the polishing surface having a dielectric material therebetween. A plurality of apertures may be formed in the polishing surface and the dielectric material to at least partially expose the electrode to the polishing surface. A membrane may be disposed between the electrode and the polishing surface that is permeable to ions and current to promote continuity between the electrode and the polishing surface.

Abstract: An article of manufacture and apparatus are provided for planarizing a substrate surface. In one aspect, an article of manufacture is provided for polishing a substrate including polishing article comprising a body having at least a partially conductive surface adapted to polish the substrate. A plurality of perforations may be formed in the polishing article for flow of material therethrough. An electrode is also exposed to the polishing surface by at least a portion of the plurality of perforations. The article of manufacture may also include a polishing surface having a plurality of grooves, wherein a portion of the plurality of grooves intersect with a portion of the plurality of perforations.

Abstract: A method of layer formation on a substrate with high aspect ratio features is disclosed. The layer is formed from a gas mixture comprising one or more process gases and one or more etch species. The one or more process gases react to deposit a material layer on the substrate. In conjunction with the material layer deposition, the etch species selectively remove portions of the deposited material layer adjacent to high aspect ratio feature openings, filling such features in a void-free and/or seam-free manner. The material layer may be deposited on the substrate using physical vapor deposition (PVD) and/or chemical vapor deposition (CVD) techniques.

Abstract: A method of layer formation on a substrate with high aspect ratio features is disclosed. The layer is formed from a gas mixture comprising one or more process gases and one or more etch species. The one or more process gases react to deposit a material layer on the substrate. In conjunction with the material layer deposition, the etch species selectively remove portions of the deposited material layer adjacent to high aspect ratio feature openings, filling such features in a void-free and/or seam-free manner. The material layer may be deposited on the substrate using physical vapor deposition (PVD) and/or chemical vapor deposition (CVD) techniques.

Abstract: An article of manufacture and apparatus are provided for planarizing a substrate surface. In one aspect, an article of manufacture is provided for polishing a substrate including polishing article comprising a body having at least a partially conductive surface adapted to polish the substrate and a mounting surface. A plurality of perforations may be formed in the polishing article for flow of material therethrough. In another aspect, a polishing article for polishing a substrate includes a body having a polishing surface and a conductive element disposed therein. The conductive element may have a contact surface that extends beyond a plane defined by the polishing surface. The polishing surface may have one or more pockets formed therein. The conductive element may be disposed in each of the polishing pockets.

Abstract: Methods and apparatus for processing substrates to improve polishing uniformity, improve planarization, remove residual material and minimize defect formation are provided. In one aspect, a method is provided for processing a substrate having a conductive material and a low dielectric constant material disposed thereon including polishing a substrate at a polishing pressures of about 2 psi or less and at platen rotational speeds of about 200 cps or greater. The polishing process may use an abrasive-containing polishing composition having up to about 1 wt. % of abrasives. The polishing process may be integrated into a multi-step polishing process.

Abstract: Methods and apparatus for processing substrates to improve polishing uniformity, improve planarization, remove residual material and minimize defect formation are provided. In one aspect, a method is provided for processing a substrate having a conductive material and a low dielectric constant material disposed thereon including polishing a substrate at a polishing pressures of about 2 psi or less and at platen rotational speeds of about 200 cps or greater. The polishing process may use an abrasive-containing polishing composition having up to about 1 wt. % of abrasives. The polishing process may be integrated into a multi-step polishing process.

Abstract: Methods and apparatus for planarizing a substrate surface are provided. In one aspect, a method is provided for planarizing a substrate surface including polishing a first conductive material to a barrier layer material, depositing a second conductive material on the first conductive material by an electrochemical deposition technique, and polishing the second conductive material and the barrier layer material to a dielectric layer. In another aspect, a processing system is provided for forming a planarized layer on a substrate, the processing system including a computer based controller configured to cause the system to polish a first conductive material to a barrier layer material, deposit a second conductive material on the first conductive material by an electrochemical deposition technique, and polish the second conductive material and the barrier layer material to a dielectric layer.

Abstract: A method and apparatus are provided for planarizing a material layer on a substrate. In one aspect, a method is provided for processing a substrate including forming a passivation layer on a substrate surface, polishing the substrate in an electrolyte solution, applying an anodic bias to the substrate surface, and removing material from at least a portion of the substrate surface. In another aspect, an apparatus is provided which includes a partial enclosure, polishing article, a cathode, a power source, a substrate carrier movably disposed above the polishing article, and a computer based controller to position a substrate in an electrolyte solution to form a passivation layer on a substrate surface, to polish the substrate in the electrolyte solution with the polishing article, and to apply an anodic bias to the substrate surface or polishing article to remove material from at least a portion of the substrate surface.

Abstract: A gas jet deposition method and apparatus includes a plurality of ports to supply plasma to the substrate on which deposition is to occur. A reagent gas is introduced either into the ports or into the expansion chamber. The use of multiple ports results in a much more uniform deposition of material on the substrate. In preferred embodiments, a carrier gas plasma is created using an excitation source such as a microwave power supply.

Abstract: The present invention provides a method for improving the adhesion of copper and other metal-comprising conductive metals to a barrier layer. A barrier is provided that has a first surface that is substantially unoxidized, wherein at least a portion of the surface is free from the presence of oxygen atoms. A conductive layer is then deposited onto the first surface of the barrier layer. The substantially unoxidized state of the first surface enhances the adhesion of the metal-comprising layer to the barrier layer. The method is particularly useful in obtaining excellent adhesion of a copper nucleation layer to an underlying barrier layer surface.

Abstract: The present invention provides a method and apparatus for forming reliable interconnects in which the overlap of the line over the plug or via is minimized or eliminated. In one aspect, a barrier plug comprised of a conductive material, such as tungsten, is deposited over the via to provide an etch stop during line etching and to prevent diffusion of the metal, such as copper, into the surrounding dielectric material if the line is misaligned over the via. Additionally, the barrier plug prevents an overall reduction in resistance of the interconnect and enables reactive ion etching to be employed to form the metal line. In another aspect, reactive ion etching techniques are employed to selectively etch the metal line and the barrier layer to provide a controlled etching process which exhibits selectivity for the metal line, then the barrier and then the via or plug.

Abstract: The present invention provides a method and apparatus for forming reliable interconnects in which the overlap of the line over the plug or via is minimized or eliminated. In one aspect, a barrier plug comprised of a conductive material, such as tungsten, is deposited over the via to provide an etch stop during line etching and to prevent diffusion of the metal, such as copper, into the surrounding dielectric material if the line is misaligned over the via. Additionally, the barrier plug prevents an overall reduction in resistance of the interconnect and enables reactive ion etching to be employed to form the metal line. In another aspect, reactive ion etching techniques are employed to selectively etch the metal line and the barrier layer to provide a controlled etching process which exhibits selectivity for the metal line, then the barrier and then the via or plug.

Abstract: The present invention provides a method for improving the adhesion of copper and other metal-comprising conductive metals to a barrier layer. A barrier layer is provided that has a first surface that is substantially unoxidized, wherein at least a portion of the first surface is free from the presence of oxygen atoms. A conductive layer is then deposited onto the first surface of the barrier layer. The substantially unoxidized state of the first surface enhances the adhesion of the metal-comprising layer to the barrier layer. The method is particularly useful in obtaining excellent adhesion of a copper nucleation layer to an underlying barrier layer surface.