Abstract: An apparatus and method to produce a waveform. The apparatus includes a first node, at least one switch that couples a second node to the first node, and responsive to the at least one switch being closed, a peak voltage is produced at the first node before a voltage at the first node drops by a voltage step. A power supply is coupled to the first node to produce, after the voltage step, a ramped voltage at the first node.

Abstract: A bias supply configured for predicting behavior of one or more aspects of a plasma load by measuring a current waveform is disclosed. The bias supply applies an asymmetric periodic voltage waveform and a corresponding current waveform. The asymmetric periodic voltage waveform includes a first section comprising a positive pulse peak and a second section comprising a negative voltage ramp. The bias supply receives data about the current waveform during the first section, and based upon the received data, provides information about a plasma load.

Abstract: An apparatus and method to produce a waveform. The apparatus includes a first node, at least one switch that couples a second node to the first node, and responsive to the at least one switch being closed, a peak voltage is produced at the first node before a voltage at the first node drops by a voltage step. A power supply is coupled to the first node to produce, after the voltage step, a ramped voltage at the first node.

Abstract: This disclosure describes systems, methods, and apparatus for controlling ion energy in a plasma processing chamber. In particular, a system for plasma processing includes a plasma processing chamber, a plasma source coupled to the plasma processing chamber, a plasma power supply coupled to the plasma source that is configured to apply power to the plasma processing chamber in periodic pulse envelopes to control a density of a plasma in the plasma processing chamber, and a support within the plasma processing chamber to support a substrate. A bias supply is configured to provide a modified periodic voltage function to the substrate support within each of the periodic pulse envelopes to control an energy of ions impacting the substrate support in the plasma processing chamber.

Abstract: Bias supply power control based on an impedance indicator. In one embodiment, a bias supply includes a first node and circuitry configured to apply a waveform to the first node, wherein the waveform includes a peak voltage and a ramp voltage. The bias supply also includes a controller configured to receive an impedance indicator of a load coupled to the first node, and to direct the circuitry to control the ramp voltage based on the impedance indicator.

Abstract: A generator to provide a source waveform, and a controller configured to receive a signal indicative of power reflected to the generator, receive timing information from a bias supply, and provide a report of the impedance based upon the bias waveform information.

Abstract: Systems and methods for plasma processing are disclosed. An exemplary system may include a plasma processing chamber including a source to produce a plasma in the processing chamber and at least two bias electrodes arranged within the plasma processing chamber to control plasma sheaths proximate to the bias electrodes. A chuck is disposed to support a substrate, and a source generator is coupled to the plasma electrode. At least one bias supply is coupled to the at least two bias electrodes, and a controller is included to control the at least one bias supply to control the plasma sheath(s) proximate to the bias electrodes.

Abstract: A bias supply comprising power circuitry configured to apply an asymmetric periodic voltage waveform at the output node wherein the asymmetric periodic voltage waveform comprises a first section that begins with a first negative voltage and changes during a first transition to a peak voltage before changing during a second transition to a second negative voltage and a second section that begins with the second negative voltage and comprises a voltage ramp between the second negative voltage and a third negative voltage. Transition circuitry is configured to adjust a slope of one, or both, of the first and second transitions.

Abstract: Systems, methods and apparatus for applying a periodic voltage function are disclosed. An exemplary method comprises applying a modified periodic voltage function to an electrical node and monitoring the modified periodic voltage function over multiple cycles to monitor a relationship dV 0 dt - I c C 1 = D to represent a status of a plasma process or the plasma processing chamber, where Ic represents a controllable ion compensation current, D is a unitless value, dV0/dT represents a portion of the modified periodic voltage function that includes a negative voltage ramp, and C1 is an effective capacitance including a capacitance of a substrate support.

Abstract: Systems, methods and apparatus for regulating ion energies in a plasma chamber and avoiding excessive and damaging charge buildup on the substrate surface and within capacitive structures being built on the surface. An exemplary method includes placing a substrate in a plasma chamber, forming a plasma in the plasma chamber, controllably switching power to the substrate so as to apply a periodic voltage function (or a modified periodic voltage function) to the substrate, and modulating, over multiple cycles of the periodic voltage function, the periodic voltage function responsive to a defined distribution of energies of ions at the surface of the substrate so as to effectuate the defined distribution of ion energies on a time-averaged basis, and to maintain surface charge buildup below a threshold.

Abstract: Systems and methods for plasma processing are disclosed. An exemplary system may include a plasma processing chamber including a source to produce a plasma in the processing chamber and at least two bias electrodes arranged within the plasma processing chamber to control plasma sheaths proximate to the bias electrodes. A chuck is disposed to support a substrate, and a source generator is coupled to the plasma electrode. At least one bias supply is coupled to the at least two bias electrodes, and a controller is included to control the at least one bias supply to control the plasma sheaths proximate to the bias electrodes.

Abstract: A bias supply configured for predicting behavior of one or more aspects of a plasma load by measuring a current waveform is disclosed. The bias supply applies an asymmetric periodic voltage waveform and a corresponding current waveform. The asymmetric periodic voltage waveform includes a first section comprising a positive pulse peak and a second section comprising a negative voltage ramp. The bias supply receives data about the current waveform during the first section, and based upon the received data, provides information about a plasma load.

Abstract: Systems and methods for plasma processing are disclosed. An exemplary system may include a plasma processing chamber comprising a source to produce a plasma in the processing chamber and at least two bias electrodes arranged within the plasma processing chamber to control plasma sheaths proximate to the bias electrodes. A chuck is disposed to support a substrate, and a source generator is coupled to the plasma electrode. At least one bias supply is coupled to the at least two bias electrodes, and a controller is included to control the at least one bias supply to control the plasma sheaths proximate to the bias electrodes.

Abstract: An apparatus and method to produce a waveform. The apparatus includes a first node, at least one switch that couples a second node to the first node, and responsive to the at least one switch being closed, a peak voltage is produced at the first node before a voltage at the first node drops by a voltage step. A power supply is coupled to the first node to produce, after the voltage step, a ramped voltage at the first node.

Abstract: Systems and methods for plasma processing are disclosed. An exemplary system may include a plasma processing chamber including a source to produce a plasma in the processing chamber and at least two bias electrodes arranged within the plasma processing chamber to control plasma sheaths proximate to the bias electrodes. A chuck is disposed to support a substrate, and a source generator is coupled to the plasma electrode. At least one bias supply is coupled to the at least two bias electrodes, and a controller is included to control the at least one bias supply to control the plasma sheaths proximate to the bias electrodes.

Abstract: Systems, methods and apparatus for applying a periodic voltage function are disclosed. An exemplary method comprises applying a modified periodic voltage function to an electrical node and monitoring the modified periodic voltage function over multiple cycles to monitor a relationship d ? V 0 dt - I c C 1 = D to represent a status of a plasma process or the plasma processing chamber, where Ic represents a controllable ion compensation current, D is a unitless value, d ? V 0 dT represents a portion of the modified periodic voltage function that includes a negative voltage ramp, and C1 is an effective capacitance including a capacitance of a substrate support.

Abstract: Bias scores can be generated from articles. A bias score generator can be configured to aggregate and process articles to identify entities and policies that appear in the articles and to generate sentiment values for the entities and policies. Aspect-based targeted sentiment analysis may be employed to generate the sentiment values. The bias score generator can process the sentiment values to generate a bias score for each article. Bias scores for multiple articles can be combined to generate a media bias score for a source of the articles. Bias loaded words and bias loaded snippets may also be used to generate a media bias score.

Abstract: Systems, methods and apparatus for regulating ion energies in a plasma chamber and avoiding excessive and damaging charge buildup on the substrate surface and within capacitive structures being built on the surface. An exemplary method includes placing a substrate in a plasma chamber, forming a plasma in the plasma chamber, controllably switching power to the substrate so as to apply a periodic voltage function (or a modified periodic voltage function) to the substrate, and modulating, over multiple cycles of the periodic voltage function, the periodic voltage function responsive to a defined distribution of energies of ions at the surface of the substrate so as to effectuate the defined distribution of ion energies on a time-averaged basis, and to maintain surface charge buildup below a threshold.

Abstract: A bias supply system and methods are disclosed. The bias supply system comprises an output node, a return node, and a bias supply configured to apply an asymmetric periodic voltage waveform between the output node and the return node. A variable capacitance is coupled between the output node and the return node, and a controller is coupled to the variable capacitance. The controller is configured to receive a setting that defines a slope of a workpiece voltage, monitor electrical parameters at the output node to obtain an indication of an actual slope of the workpiece voltage, and control the variable capacitance so the actual slope of the workpiece voltage approaches the slope defined by the setting.

Abstract: An apparatus and method to produce a waveform. The apparatus includes a first node, a first power supply coupled to a second node, a first switch that couples the second node to the first node, and responsive to the first switch being closed, a peak voltage is applied at the first node. The apparatus also includes a second switch that couples a third node to the first node, and responsive to the second switch being closed, a voltage step is applied at the first node. In addition, a second power supply is coupled to the first node to produce a ramped voltage at the first node.