Abstract: A susceptor for a CVD-reactor includes insertion openings arranged in a bearing surface of the susceptor. An insertion section of a positioning element is inserted into one of the insertion openings. The insertion section forms positioning flanks with a section projecting from the insertion opening for fixing the position of a substrate. The insertion openings each have side walls and a base. The insertion section comprises bearing areas adjacent to the side walls of the insertion openings and a lower side of the positioning element facing the base of the insertion opening. The base of the insertion opening is separated from the lower side of the positioning element by a first distance. An edge protruding section of the positioning element is separated from a section of the bearing surface of the susceptor by a second distance.

Abstract: In a CVD reactor, flushing gases of different heat conductivities are used to flush a gap between a substrate holder and a heating system. The lower side of the substrate holder is configured differently in a central region with respect to the heat transmission from the heating system to the substrate holder, than in a circumferential region that surrounds the central region. The gap has such a gap height that, upon a change of a first flushing gas with a first heat conductivity to a second flushing gas with a second heat conductivity, the heat supplied from the heating system to the substrate holder changes differently in the circumferential region than in the central region.

Abstract: A susceptor for a CVD-reactor includes insertion openings arranged in a bearing surface of the susceptor. An insertion section of a positioning element is inserted into one of the insertion openings. The insertion section forms positioning flanks with a section projecting from the insertion opening for fixing the position of a substrate. The insertion openings each have side walls and a base. The insertion section comprises bearing areas adjacent to the side walls of the insertion openings and a lower side of the positioning element facing the base of the insertion opening. The base of the insertion opening is separated from the lower side of the positioning element by a first distance. An edge protruding section of the positioning element is separated from a section of the bearing surface of the susceptor by a second distance.

Abstract: A CVD reactor includes a substrate holder with one or more pockets for holding one or more substrates. The CVD reactor also includes a heating system arranged below the substrate holder and spaced apart from the lower side of the substrate holder by a gap. The lower side of the substrate holder is configured differently in a central region with respect to the heat transmission from the heating system to the substrate holder, than in a circumferential region that surrounds the central region. A gas flushing device flushes the gap with flushing gases of different heat conductivity. The gap has such a gap height that, upon a change of a first flushing gas with a first heat conductivity to a second flushing gas with a second heat conductivity, the heat supplied from the heating system to the substrate holder changes differently in the circumferential region than in the central region.

Abstract: A device for holding at least one substrate in a process chamber of a CVD or PVD reactor includes a flat upper side on which at least one bearing area for the at least one substrate is located. An outline contour line corresponding to the outline contour of the substrate is flanked by positioning edges for positioning a respective section of an edge of the substrate. The device further includes carrying protrusions projecting from a bearing area base surface of the bearing area that is surrounded by the outline contour line. The carrying protrusions have contact surfaces that are raised in relation to the bearing area base surface, on which contact surfaces the substrate can be placed. In order to improve the temperature homogeneity of the surface of the substrate, each of the carrying protrusions originate from a recess of the bearing area base surface.

Abstract: A device for holding at least one substrate in a process chamber of a CVD or PVD reactor includes a flat upper side on which at least one bearing area for the at least one substrate is located. An outline contour line corresponding to the outline contour of the substrate is flanked by positioning edges for positioning a respective section of an edge of the substrate. The device further includes carrying protrusions projecting from a bearing area base surface of the bearing area that is surrounded by the outline contour line. The carrying protrusions have contact surfaces that are raised in relation to the bearing area base surface, on which contact surfaces the substrate can be placed. In order to improve the temperature homogeneity of the surface of the substrate, each of the carrying protrusions originate from a recess of the bearing area base surface.

Abstract: The invention relates to a CVD reactor, with a process chamber (4) which is arranged therein and into which a process gas can be fed by means of a gas inlet member (2), with a substrate holder (3) which, on the upper side (3?) thereof facing the process chamber (4), has one or more pockets (5) which are designed in such a manner that one substrate (7) in each case rests only on selected, raised support regions (6), and with a heating system (9) which is arranged below the substrate holder (3) and is spaced apart from the lower side (3?) of the substrate holder (3), wherein the lower side (3?) of the substrate holder (3) is configured differently in a central region (b) with respect to the heat transmission from the heating system (9) to the substrate holder (3), which central region is located under a central zone of the pocket (5), than in a surrounding region (a) which surrounds the central region (a) and is located below a zone close to the edge of the pocket (5).