Abstract: Composite photodetection devices are described comprising layers with different photodetector embodiments, in connection through vias in bonded layers with electronic circuitry upon them. Standard photodetectors with isolation structures are defined as well as photodetectors with the capability for avalanche operation. Still further embodiments with micropixel embodiments comprising silicon photomultipliers are also described. Embodiments with incorporated transistors are also defined. Methods of using the attached electronics associated with each pixel element to define novel operational set points for the composite photodetector devices are also described.