Abstract: A method for applying stress conditions to integrated circuit device samples during accelerated stress testing may include partitioning each of the integrated circuit device samples into a first region having a first functional element, partitioning each of the integrated circuit device samples into at least one second region having at least one second functional element, applying a first stress condition to the first region having the first element, applying a second stress condition to the at least one second region having the at least one second element, determining a first portion of the integrated circuit device samples that functionally failed based on the first stress condition, and determining a second portion of the integrated circuit device samples that functionally failed based on the second stress condition. An acceleration model parameter is derived based on the determining of the first and second portion of the integrated circuit samples that functionally failed.

Abstract: A method for applying stress conditions to integrated circuit device samples during accelerated stress testing may include partitioning each of the integrated circuit device samples into a first region having a first functional element, partitioning each of the integrated circuit device samples into at least one second region having at least one second functional element, applying a first stress condition to the first region having the first element, applying a second stress condition to the at least one second region having the at least one second element, determining a first portion of the integrated circuit device samples that functionally failed based on the first stress condition, and determining a second portion of the integrated circuit device samples that functionally failed based on the second stress condition. An acceleration model parameter is derived based on the determining of the first and second portion of the integrated circuit samples that functionally failed.

Abstract: A method for applying stress conditions to integrated circuit device samples during accelerated stress testing may include partitioning each of the integrated circuit device samples into a first region having a first functional element, partitioning each of the integrated circuit device samples into at least one second region having at least one second functional element, applying a first stress condition to the first region having the first element, applying a second stress condition to the at least one second region having the at least one second element, determining a first portion of the integrated circuit device samples that functionally failed based on the first stress condition, and determining a second portion of the integrated circuit device samples that functionally failed based on the second stress condition. An acceleration model parameter is derived based on the determining of the first and second portion of the integrated circuit samples that functionally failed.

Abstract: A method for applying stress conditions to integrated circuit device samples during accelerated stress testing may include partitioning each of the integrated circuit device samples into a first region having a first functional element, partitioning each of the integrated circuit device samples into at least one second region having at least one second functional element, applying a first stress condition to the first region having the first element, applying a second stress condition to the at least one second region having the at least one second element, determining a first portion of the integrated circuit device samples that functionally failed based on the first stress condition, and determining a second portion of the integrated circuit device samples that functionally failed based on the second stress condition. An acceleration model parameter is derived based on the determining of the first and second portion of the integrated circuit samples that functionally failed.

Abstract: A method for applying stress conditions to integrated circuit device samples during accelerated stress testing may include partitioning each of the integrated circuit device samples into a first region having a first functional element, partitioning each of the integrated circuit device samples into at least one second region having at least one second functional element, applying a first stress condition to the first region having the first element, applying a second stress condition to the at least one second region having the at least one second element, determining a first portion of the integrated circuit device samples that functionally failed based on the first stress condition, and determining a second portion of the integrated circuit device samples that functionally failed based on the second stress condition. An acceleration model parameter is derived based on the determining of the first and second portion of the integrated circuit samples that functionally failed.

Abstract: A method for applying stress conditions to integrated circuit device samples during accelerated stress testing may include partitioning each of the integrated circuit device samples into a first region having a first functional element, partitioning each of the integrated circuit device samples into at least one second region having at least one second functional element, applying a first stress condition to the first region having the first element, applying a second stress condition to the at least one second region having the at least one second element, determining a first portion of the integrated circuit device samples that functionally failed based on the first stress condition, and determining a second portion of the integrated circuit device samples that functionally failed based on the second stress condition. An acceleration model parameter is derived based on the determining of the first and second portion of the integrated circuit samples that functionally failed.

Abstract: A method and device comprising an easily reworkable alpha particle barrier is provided. The easily reworkable alpha particle barrier is applied in the space between the surface of the chip and the surface of the substrate, and reduces soft error rate (SER). Further, the easily reworkable alpha particle barrier material is chosen from the group of an organic material, a hydrocarbon, more specifically a polyalphaolefin (PAO) oil, and a polymer or filled polymer; wherein the polyalphaolefin oil has a viscosity below 1000 cSt (at 100° C.). The easily reworkable alpha particle barrier material can be used with multichip modules (MCM's) allowing easy device rework of one or more dies without affecting other dies on the same substrate.

Abstract: A method and device comprising an easily reworkable alpha particle barrier is provided. The easily reworkable alpha particle barrier is applied in the space between the surface of the chip and the surface of the substrate, and reduces soft error rate (SER). Further, the easily reworkable alpha particle barrier material is chosen from the group of an organic material, a hydrocarbon, more specifically a polyalphaolefin (PAO) oil, and a polymer or filled polymer; wherein the polyalphaolefin oil has a viscosity below 1000 cSt (at 100° C.). The easily reworkable alpha particle barrier material can be used with multichip modules (MCM's) allowing easy device rework of one or more dies without affecting other dies on the same substrate.

Abstract: A method and device comprising an easily reworkable alpha particle barrier is provided. The easily reworkable alpha particle barrier is applied in the space between the surface of the chip and the surface of the substrate, and reduces soft error rate (SER). Further, the easily reworkable alpha particle barrier material is chosen from the group of an organic material, a hydrocarbon, more specifically a polyalphaolefin (PAO) oil, and a polymer or filled polymer; wherein the polyalphaolefin oil has a viscosity below 1000 cSt (at 100° C.). The easily reworkable alpha particle barrier material can be used with multichip modules (MCM's) allowing easy device rework of one or more dies without affecting other dies on the same substrate.