Patents by Inventor Daniel David Leffel

Daniel David Leffel has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for making an integrated circuit device with dielectrically isolated tubs and related circuit
    Patent number: 6989552
    Abstract: A method for making an integrated circuit includes forming spaced-apart trenches on a surface of a single crystal silicon substrate, lining the trenches with a silicon oxide layer, forming a first polysilicon layer over the silicon oxide layer, forming a second polysilicon layer over the first polysilicon layer, and removing a thickness of the single crystal silicon substrate to expose tubs of single crystal silicon in the second polysilicon layer.
    Type: Grant
    Filed: October 17, 2002
    Date of Patent: January 24, 2006
    Assignee: Agere Systems Inc.
    Inventors: Charles Arthur Goodwin, Daniel David Leffel, William Randolph Lewis
  • Method for making an integrated circuit device with dielectrically isolated tubs and related circuit
    Publication number: 20030034526
    Abstract: A method for making an integrated circuit includes forming spaced-apart trenches on a surface of a single crystal silicon substrate, lining the trenches with a silicon oxide layer, forming a first polysilicon layer over the silicon oxide layer, forming a second polysilicon layer over the first polysilicon layer, and removing a thickness of the single crystal silicon substrate to expose tubs of single crystal silicon in the second polysilicon layer.
    Type: Application
    Filed: October 17, 2002
    Publication date: February 20, 2003
    Inventors: Charles Arthur Goodwin, Daniel David Leffel, William Randolph Lewis
  • Method for making an integrated circuit device with dielectrically isolated tubs and related circuit
    Patent number: 6500717
    Abstract: A method for making an integrated circuit includes forming spaced-apart trenches on a surface of a single crystal silicon substrate, lining the trenches with a silicon oxide layer, forming a first polysilicon layer over the silicon oxide layer, forming a second polysilicon layer over the first polysilicon layer, and removing a thickness of the single crystal silicon substrate to expose tubs of single crystal silicon in the second polysilicon layer.
    Type: Grant
    Filed: December 1, 2000
    Date of Patent: December 31, 2002
    Assignee: Agere Systems Inc.
    Inventors: Charles Arthur Goodwin, Daniel David Leffel, William Randolph Lewis
  • Method for making an integrated circuit device with dielectrically isolated tubs and related circuit
    Publication number: 20020068420
    Abstract: A method for making an integrated circuit includes forming spaced-apart trenches on a surface of a single crystal silicon substrate, lining the trenches with a silicon oxide layer, forming a first polysilicon layer over the silicon oxide layer, forming a second polysilicon layer over the first polysilicon layer, and removing a thickness of the single crystal silicon substrate to expose tubs of single crystal silicon in the second polysilicon layer.
    Type: Application
    Filed: December 1, 2000
    Publication date: June 6, 2002
    Applicant: Lucent Technologies Inc.
    Inventors: Charles Arthur Goodwin, Daniel David Leffel, William Randolph Lewis