Patents by Inventor Daniel DECHENE

Daniel DECHENE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Substantially defect-free polysilicon gate arrays
    Patent number: 10217633
    Abstract: A single critical mask process flow and associated structure eliminate the formation of narrow polysilicon defects at the ends of polysilicon gate arrays, and obviate the need to implement complicated ground rules and post-design fill methods to avoid generation of the defects.
    Type: Grant
    Filed: March 13, 2017
    Date of Patent: February 26, 2019
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: Heng Yang, Ahmed Hassan, Daniel Dechene
  • SUBSTANTIALLY DEFECT-FREE POLYSILICON GATE ARRAYS
    Publication number: 20180261456
    Abstract: A single critical mask process flow and associated structure eliminate the formation of narrow polysilicon defects at the ends of polysilicon gate arrays, and obviate the need to implement complicated ground rules and post-design fill methods to avoid generation of the defects.
    Type: Application
    Filed: March 13, 2017
    Publication date: September 13, 2018
    Applicant: GLOBALFOUNDRIES INC.
    Inventors: Heng YANG, Ahmed HASSAN, Daniel DECHENE