Abstract: An optoelectronic module includes at least one light emitting diode that emits light with a luminous intensity during operation. The optoelectronic module also includes an integrated circuit which sets an operating current of the light emitting diode and measures a value of the forward voltage of the light emitting diode during operation. The integrated circuit determines a degradation of the light emitting diode by measuring the value of the forward voltage and increases or decreases the electrical operating current as a function of the measured value of the forward voltage, such that a change in the luminous intensity due to the degradation is at least partially compensated. The integrated circuit or a measurement-control-unit for controlling the integrated circuit includes a memory in which calibration data is stored. The calibration data comprises a value of the forward voltage of the light emitting diode as a reference value for determining the degradation.

Abstract: An integrated semiconductor optoelectronic component for sensing ambient light levels includes a silicon photomultiplier configured to deliver an output signal indicative of the intensity of the light that irradiates the component. The silicon photomultiplier has an active surface area for light detection. The component also includes an optical filter covering the active surface area of the silicon photomultiplier. The optical filter is adapted to selectively transmit light onto the active surface area as a function of wavelength. The optical filter is a scotopic filter and has a spectral transmission curve that mimics the spectral response of the human eye under low-light conditions. The component further includes readout electronics for processing the output signal of the silicon photomultiplier.

Abstract: A method for producing an optoelectronic component comprises the following steps arranging a first optoelectronic semiconductor structure, which comprises a first structure carrier and an epitaxially grown first semiconductor layer sequence, on a bottom of a glass pane, the first semiconductor layer sequence being oriented with respect to the glass pane, arranging a moldable material on the bottom of the glass pane, the first optoelectronic semiconductor structure being embedded into the moldable material, removing part of the moldable material and removing the first structure carrier in order to expose the first semiconductor layer sequence, forming electrical contacts on the first semiconductor layer sequence, connecting a semiconductor element having a circuit integrated on a front face to the first semiconductor layer sequence, forming electrical component contacts on a rear face of the semiconductor element, and separating the optoelectronic component by dividing the glass pane.

Abstract: In an embodiment, an optoelectronic measuring device includes a first detector configured to provide a first detector signal, a second detector configured to provide a second detector signal, wherein each of the first detector and the second detector is configured to detect electromagnetic radiation, a signal difference determiner configured to generate a difference signal by subtracting the second detector signal from the first detector signal and a spectral filter arranged in a beam path upstream of the second detector, wherein the spectral filter is configured to filter the electromagnetic radiation before detection by the second detector, wherein the optoelectronic measuring device is configured to measure an intensity of the electromagnetic radiation impinging on the optoelectronic measuring device.

Abstract: In one embodiment, the substrate is configured for a semiconductor laser diode and comprises a plurality of substrate layers. The substrate layers include insulating layers and carrier layers, which are thicker. A plurality of electrical contact surfaces, which are configured for the semiconductor laser diode, a laser capacitor and a control chip, are located on an assembling side of a first, uppermost substrate layer, which is an insulating layer. Electrical conductor tracks, which electrically interconnect the contact surfaces, are located on the one hand between the first insulating layer and a second insulating layer, and on the other hand between the second insulating layer and a third substrate layer, which is preferably an insulating layer.

Abstract: An integrated semiconductor optoelectronic component for sensing ambient light levels includes a silicon photomultiplier configured to deliver an output signal indicative of the intensity of the light that irradiates the component. The silicon photomultiplier has an active surface area for light detection. The component also includes an optical filter covering the active surface area of the silicon photomultiplier. The optical filter is adapted to selectively transmit light onto the active surface area as a function of wavelength. The optical filter is a scotopic filter and has a spectral transmission curve that mimics the spectral response of the human eye under low-light conditions. The component further includes readout electronics for processing the output signal of the silicon photomultiplier.

Abstract: A sensor and a 3-D position detection system are disclosed. In an embodiment a sensor includes at least one sensor chip configured to detect radiation, at least one carrier on which the sensor chip is mounted and a cast body that is transmissive for the radiation and that completely covers the sensor chip, wherein a centroid shift of the sensor chip amounts to at most 0.04 mrad at an angle of incidence of up to at least 60°, wherein the cast body comprises a light inlet side that faces away from the sensor chip, and the light inlet side comprises side walls bounding it on all sides, wherein the side walls are smooth, planar and transmissive for the radiation, wherein a free field-of-view on the light inlet side has an aperture angle of at least 140°, and wherein the cast body protrudes in a direction away from the sensor chip beyond a bond wire.

Abstract: A sensor including at least one sensor chip for detecting a radiation; and an electronics unit with a digital, bidirectional connection line and with a standby control circuit, as well as with an active status line; wherein the connection line is configured to be connected to an external activation unit; and the standby control circuit is configured to determine whether the connection line is externally addressed by the activation unit when the connection line is not addressed by the active status line, and precisely then to place the sensor in a standby mode.

Abstract: In an embodiment, an optoelectronic measuring device 1ncludes a first detector configured to provide a first detector signal, a second detector configured to provide a second detector signal, wherein each of the first detector and the second detector is configured to detect electromagnetic radiation, a signal difference determiner configured to generate a difference signal by subtracting the second detector signal from the first detector signal and a spectral filter arranged in a beam path upstream of the second detector, wherein the spectral filter is configured to filter the electromagnetic radiation before detection by the second detector, wherein the optoelectronic measuring device is configured to measure an intensity of the electromagnetic radiation impinging on the optoelectronic measuring device.

Abstract: A semiconductor light source configured for a spectrometer may include at least one multipixel chip, at least one color setting component disposed optically downstream of at least one of emission region, and a drive unit. The color setting component may be configured for altering a spectral emission behavior of assigned emission regions. The drive unit may be configured to operate a plurality of mutually independently drivable emission regions successively, such that during operation thereof at least three spectrally narrowband individual spectra are emitted successively by the plurality of mutually independently drivable emission regions together with the associated color setting component from which individual spectra a total spectrum emitted by the semiconductor light source is constituted.

Abstract: A semiconductor sensor includes a detector chip that detects green light and an interference filter that optically precedes the detector chip and is permeable to green light and impermeable and reflective to red light and near-infrared radiation. A color filter optically precedes the interference filter. The color filter has a transparency of at least 60% for green light and has an absorbing effect for red light and near-infrared radiation. The semiconductor sensor appears gray or black in the region of the interference filter independently of the angle.

Abstract: A semiconductor light source configured for a spectrometer may include at least one multipixel chip, at least one color setting component disposed optically downstream of at least one of emission region, and a drive unit. The color setting component may be configured for altering a spectral emission behavior of assigned emission regions. The drive unit may be configured to operate a plurality of mutually independently drivable emission regions successively, such that during operation thereof at least three spectrally narrowband individual spectra are emitted successively by the plurality of mutually independently drivable emission regions together with the associated color setting component from which individual spectra a total spectrum emitted by the semiconductor light source is constituted.

Abstract: A sensor including at least one sensor chip for detecting a radiation; and an electronics unit with a digital, bidirectional connection line and with a standby control circuit, as well as with an active status line; wherein the connection line is configured to be connected to an external activation unit; and the standby control circuit is configured to determine whether the connection line is externally addressed by the activation unit when the connection line is not addressed by the active status line, and precisely then to place the sensor in a standby mode.

Abstract: A sensor and a 3-D position detection system are disclosed. In an embodiment a sensor includes at least one sensor chip configured to detect radiation, at least one carrier on which the sensor chip is mounted and a cast body that is transmissive for the radiation and that completely covers the sensor chip, wherein a centroid shift of the sensor chip amounts to at most 0.04 mrad at an angle of incidence of up to at least 60°, wherein the cast body comprises a light inlet side that faces away from the sensor chip, and the light inlet side comprises side walls bounding it on all sides, wherein the side walls are smooth, planar and transmissive for the radiation, wherein a free field-of-view on the light inlet side has an aperture angle of at least 140°, and wherein the cast body protrudes in a direction away from the sensor chip beyond a bond wire.

Abstract: A semiconductor sensor includes a detector chip that detects green light and an interference filter that optically precedes the detector chip and is permeable to green light and impermeable and reflective to red light and near-infrared radiation. A color filter optically precedes the interference filter. The color filter has a transparency of at least 60% for green light and has an absorbing effect for red light and near-infrared radiation. The semiconductor sensor appears gray or black in the region of the interference filter independently of the angle.