Patents by Inventor Daniel Diguet

Daniel Diguet has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of forming a contact on the surface of a semiconductor body by serigraphy and body obtained by means of this method
    Patent number: 4242696
    Abstract: A method of forming a contact on the surface of a semiconductor by a serigraphy treatment in which a doped conductive paste is provided in a first deposition, and then a second deposition containing no dopant is provided at least partly on the first deposition. Devices made in accordance with the invention are particularly suited for use as photovoltaic converters for solar radiation.
    Type: Grant
    Filed: December 11, 1978
    Date of Patent: December 30, 1980
    Assignee: U.S. Philips Corporation
    Inventors: Daniel Diguet, Gerard A. David, Pierre Aubril
  • Method of manufacturing semiconductor devices having isoelectronically built-in nitrogen and having the p-n junction formed subsequent to the deposition process
    Patent number: 4154630
    Abstract: A method of manufacturing by liquid epitaxy III-V semiconductor crystals comprising a layer having isoelectronic nitrogen trapping centers.The method is characterized in that the deposition of the nitrogen-doped layer is succeeded by the deposition of a deep layer containing less nitrogen doping after which a p-n junction is formed in the first layer.
    Type: Grant
    Filed: May 19, 1977
    Date of Patent: May 15, 1979
    Assignee: U.S. Philips Corporation
    Inventors: Daniel Diguet, Bernard Legros, Marc Mahieu
  • Polychromatic monolithic semiconductor assembly
    Patent number: 4142196
    Abstract: Polychromatic assembly comprising several electroluminescent semiconductor diodes that are formed by diffusion of islands localized in superimposed epitaxial layers, which layers are of different compositions and are deposited on a semiconductor substrate or a semi-insulator, each epitaxial layer having a forbidden bandwidth smaller than that of the layer below which it is present.
    Type: Grant
    Filed: December 19, 1977
    Date of Patent: February 27, 1979
    Assignee: U.S. Philips Corporation
    Inventors: Daniel Diguet, Michel Gaffre
  • Amphoteric heterojunction
    Patent number: 4035205
    Abstract: A method of manufacturing a hetero junction by epitaxial deposition in a solution.The solution contains an amphoteric dopant and the composition thereof is modified at a temperature which lies between the transition temperatures prior to and after the modification.Application to electroluminescent devices of III and V type.
    Type: Grant
    Filed: December 11, 1975
    Date of Patent: July 12, 1977
    Assignee: U.S. Philips Corporation
    Inventors: Jacques Lebailly, Daniel Diguet
  • III-V semiconductor device with OHMIC contact to high resistivity region
    Patent number: 3987480
    Abstract: The invention relates to a semiconductor device having a weakly doped region which comprises an ohmic contact.According to the invention the ohmic contact comprises two elements of which one causes in the semi-conductor body the same conductivity type as that of the region on which said contact is present.
    Type: Grant
    Filed: May 17, 1974
    Date of Patent: October 19, 1976
    Assignee: U.S. Philips Corporation
    Inventors: Daniel Diguet, Jean-Pierre Rioult
  • Electroluminescent device and method of manufacturing same
    Patent number: 3977016
    Abstract: A device having an electroluminescent diode of which the two regions have a homogeneous concentration of one type of doping centers.The doping centers of the opposite type have a concentration which decreases towards the emissive surface from the junction. Manufacture of the diode by out-diffusion.Application to devices having electroluminescent diodes with compounds III-V.
    Type: Grant
    Filed: August 4, 1975
    Date of Patent: August 24, 1976
    Assignee: U.S. Philips Corporation
    Inventors: Jacques Lebailly, Daniel Diguet
  • Semiconductor device
    Patent number: 3940784
    Abstract: A semiconductor device having a monocrystalline semiconductor layer provided on a surface comprising at least one region obtained by diffusion of a doping impurity whose width from the surface of the semiconductor layer in the direction of the substrate first increases and than decreases while the chemical composition of the semiconductor layer on the substrate side differs from that at the surface.
    Type: Grant
    Filed: May 3, 1974
    Date of Patent: February 24, 1976
    Assignee: U.S. Philips Corporation
    Inventor: Daniel Diguet