Patents by Inventor Daniel Distaso
Daniel Distaso has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11456205Abstract: Methods of producing grating materials with variable height fins are provided. In one example, a method may include providing a mask layer atop a substrate, the mask layer including a first opening over a first processing area and a second opening over a second processing area. The method may further include etching the substrate to recess the first and second processing areas, forming a grating material over the substrate, and etching the grating material in the first and second processing areas to form a plurality of structures oriented at a non-zero angle with respect to a vertical extending from a top surface of the substrate.Type: GrantFiled: May 11, 2020Date of Patent: September 27, 2022Assignee: Applied Materials, Inc.Inventors: Morgan Evans, Joseph C. Olson, Rutger Meyer Timmerman Thijssen, Daniel Distaso, Ryan Boas
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Publication number: 20210351069Abstract: Methods of producing grating materials with variable height fins are provided. In one example, a method may include providing a mask layer atop a substrate, the mask layer including a first opening over a first processing area and a second opening over a second processing area. The method may further include etching the substrate to recess the first and second processing areas, forming a grating material over the substrate, and etching the grating material in the first and second processing areas to form a plurality of structures oriented at a non-zero angle with respect to a vertical extending from a top surface of the substrate.Type: ApplicationFiled: May 11, 2020Publication date: November 11, 2021Applicant: Applied Materials, Inc.Inventors: Morgan Evans, Joseph C. Olson, Rutger Meyer Timmerman Thijssen, Daniel Distaso, Ryan Boas
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Patent number: 10904996Abstract: Embodiments described herein generally relate to plasma assisted or plasma enhanced processing chambers. More specifically, embodiments herein relate to electrostatic chucking (ESC) substrate supports configured to provide pulsed DC voltage, and methods of applying a pulsed DC voltage, to a substrate during plasma assisted or plasma enhanced semiconductor manufacturing processes.Type: GrantFiled: September 20, 2017Date of Patent: January 26, 2021Assignee: APPLIED MATERIALS, INC.Inventors: Travis Lee Koh, Haitao Wang, Philip Allan Kraus, Vijay D. Parkhe, Daniel Distaso, Christopher A. Rowland, Mark Markovsky, Robert Casanova
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Patent number: 10290470Abstract: An apparatus and method for the creation of negative ion beams is disclosed. The apparatus includes an RF ion source, having an extraction aperture. An antenna disposed proximate a dielectric window is energized by a pulsed RF power supply. While the RF power supply is actuated, a plasma containing primarily positive ions and electrons is created. When the RF power supply is deactivated, the plasma transforms into an ion-ion plasma. Negative ions may be extracted from the RF ion source while the RF power supply is deactivated. These negative ions, in the form of a negative ribbon ion beam, may be directed toward a workpiece at a specific incident angle. Further, both a positive ion beam and a negative ion beam may be extracted from the same ion source by pulsing the bias power supply multiple times each period.Type: GrantFiled: July 10, 2017Date of Patent: May 14, 2019Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Daniel Distaso, Svetlana B. Radovanov, Joseph P. Dzengeleski
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Publication number: 20190090338Abstract: Embodiments described herein generally relate to plasma assisted or plasma enhanced processing chambers. More specifically, embodiments herein relate to electrostatic chucking (ESC) substrate supports configured to provide pulsed DC voltage, and methods of applying a pulsed DC voltage, to a substrate during plasma assisted or plasma enhanced semiconductor manufacturing processes.Type: ApplicationFiled: September 20, 2017Publication date: March 21, 2019Inventors: Travis Lee KOH, Haitao WANG, Philip Allan KRAUS, Vijay D. PARKHE, Daniel DISTASO, Christopher A. ROWLAND, Mark MARKOVSKY, Robert CASANOVA
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Patent number: 10081861Abstract: Methods for the selective processing of the outer portion of a workpiece are disclosed. The outer portion is processed by directing an ion beam toward the workpiece, where the ion beam extends beyond the outer edge of the workpiece at two locations. The workpiece is then rotated relative to the ion beam about the center so that all regions of the outer portion are exposed to the ion beam. The workpiece may be rotated an integral number of rotations. The ion beam may perform any process, such as ion implantation, etching or deposition. The outer portion may be an annular ring having an outer diameter equal to that of the workpiece and having a width of 1 to 30 millimeters. The rotation of the workpiece may be aligned with a notch on the outer edge of the workpiece.Type: GrantFiled: April 8, 2015Date of Patent: September 25, 2018Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Morgan D. Evans, Daniel Distaso, Stanislav S. Todorov, Mark R. Amato, William Davis Lee, Jillian Reno
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Publication number: 20170309454Abstract: An apparatus and method for the creation of negative ion beams is disclosed. The apparatus includes an RF ion source, having an extraction aperture. An antenna disposed proximate a dielectric window is energized by a pulsed RF power supply. While the RF power supply is actuated, a plasma containing primarily positive ions and electrons is created. When the RF power supply is deactivated, the plasma transforms into an ion-ion plasma. Negative ions may be extracted from the RF ion source while the RF power supply is deactivated. These negative ions, in the form of a negative ribbon ion beam, may be directed toward a workpiece at a specific incident angle. Further, both a positive ion beam and a negative ion beam may be extracted from the same ion source by pulsing the bias power supply multiple times each period.Type: ApplicationFiled: July 10, 2017Publication date: October 26, 2017Inventors: Daniel Distaso, Svetlana B. Radovanov, Joseph P. Dzengeleski
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Patent number: 9734991Abstract: An apparatus and method for the creation of negative ion beams is disclosed. The apparatus includes an RF ion source, having an extraction aperture. An antenna disposed proximate a dielectric window is energized by a pulsed RF power supply. While the RF power supply is actuated, a plasma containing primarily positive ions and electrons is created. When the RF power supply is deactivated, the plasma transforms into an ion-ion plasma. Negative ions may be extracted from the RF ion source while the RF power supply is deactivated. These negative ions, in the form of a negative ribbon ion beam, may be directed toward a workpiece at a specific incident angle. Further, both a positive ion beam and a negative ion beam may be extracted from the same ion source by pulsing the bias power supply multiple times each period.Type: GrantFiled: July 28, 2015Date of Patent: August 15, 2017Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Daniel Distaso, Svetlana B. Radovanov, Joseph P. Dzengeleski
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Publication number: 20170032937Abstract: An apparatus and method for the creation of negative ion beams is disclosed. The apparatus includes an RF ion source, having an extraction aperture. An antenna disposed proximate a dielectric window is energized by a pulsed RF power supply. While the RF power supply is actuated, a plasma containing primarily positive ions and electrons is created. When the RF power supply is deactivated, the plasma transforms into an ion-ion plasma. Negative ions may be extracted from the RF ion source while the RF power supply is deactivated. These negative ions, in the form of a negative ribbon ion beam, may be directed toward a workpiece at a specific incident angle. Further, both a positive ion beam and a negative ion beam may be extracted from the same ion source by pulsing the bias power supply multiple times each period.Type: ApplicationFiled: July 28, 2015Publication date: February 2, 2017Inventors: Daniel Distaso, Svetlana B. Radovanov, Joseph P. Dzengeleski
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Publication number: 20160298229Abstract: Methods for the selective processing of the outer portion of a workpiece are disclosed. The outer portion is processed by directing an ion beam toward the workpiece, where the ion beam extends beyond the outer edge of the workpiece at two locations. The workpiece is then rotated relative to the ion beam about the center so that all regions of the outer portion are exposed to the ion beam. The workpiece may be rotated an integral number of rotations. The ion beam may perform any process, such as ion implantation, etching or deposition. The outer portion may be an annular ring having an outer diameter equal to that of the workpiece and having a width of 1 to 30 millimeters. The rotation of the workpiece may be aligned with a notch on the outer edge of the workpiece.Type: ApplicationFiled: April 8, 2015Publication date: October 13, 2016Inventors: Morgan D. Evans, Daniel Distaso, Stanislav S. Todorov, Mark R. Amato, William Davis Lee, Jillian Reno
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Patent number: 9336998Abstract: In one embodiment a method of etching a substrate includes directing a first ion beam to the substrate through an extraction plate of a processing apparatus using a first set of control settings of the processing apparatus. The method may further include detecting a signal from the substrate that indicates a change in material being etched by the first ion beam from a first material to a second material, adjusting control settings of the processing apparatus to a second set of control settings different from the first set of control settings based on the second material, and directing a second ion beam to the substrate through the extraction plate using the second set of control settings.Type: GrantFiled: May 9, 2014Date of Patent: May 10, 2016Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Ludovic Godet, Daniel Distaso, Nini Munoz, Tristan Ma, Yu Liu
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Publication number: 20160111254Abstract: A system and method for processing a workpiece is disclosed. A plasma chamber is used to create a ribbon ion beam, extracted through an extraction aperture. A workpiece is translated proximate the extraction aperture so as to expose different portions of the workpiece to the ribbon ion beam. As the workpiece is being exposed to the ribbon ion beam, at least one parameter associated with the plasma chamber is varied. The variable parameters include extraction voltage duty cycle, workpiece scan velocity and the shape of the ion beam. In some embodiments, after the entire workpiece has been exposed to the ribbon ion beam, the workpiece is rotated and exposed to the ribbon ion beam again, while the parameters are varied. This sequence may be repeated a plurality of times.Type: ApplicationFiled: October 8, 2015Publication date: April 21, 2016Inventors: Morgan D. Evans, Kevin Anglin, Daniel Distaso, John Hautala, Steven Robert Sherman, Joseph C. Olson
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Publication number: 20150325410Abstract: In one embodiment a method of etching a substrate includes directing a first ion beam to the substrate through an extraction plate of a processing apparatus using a first set of control settings of the processing apparatus. The method may further include detecting a signal from the substrate that indicates a change in material being etched by the first ion beam from a first material to a second material, adjusting control settings of the processing apparatus to a second set of control settings different from the first set of control settings based on the second material, and directing a second ion beam to the substrate through the extraction plate using the second set of control settings.Type: ApplicationFiled: May 9, 2014Publication date: November 12, 2015Applicant: Varian Semiconductor Equipment Associates, Inc.Inventors: Ludovic Godet, Daniel Distaso, Nini Munoz, Tristan Ma, Yu Liu
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Patent number: 9118001Abstract: In one embodiment a method of method of treating a sidewall layer of a patterned feature includes providing the patterned feature as an etched structure comprising one or more layers disposed on a substrate and generally parallel to a plane of the substrate defined by a front surface of the substrate. The sidewall layer comprises material from the one or more etched layers. The method further includes arranging the substrate proximate a sheath modifier that is adjacent a plasma, and providing ions in an ion dose to the substrate by extracting the ions from the plasma through the sheath modifier, the ions impinging upon the substrate at an angle with respect to a perpendicular to the plane of the substrate.Type: GrantFiled: July 2, 2013Date of Patent: August 25, 2015Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Ludovic Godet, Daniel Distaso, John J. Hautala, Christopher Campbell
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Publication number: 20140017817Abstract: In one embodiment a method of method of treating a sidewall layer of a patterned feature includes providing the patterned feature as an etched structure comprising one or more layers disposed on a substrate and generally parallel to a plane of the substrate defined by a front surface of the substrate. The sidewall layer comprises material from the one or more etched layers. The method further includes arranging the substrate proximate a sheath modifier that is adjacent a plasma, and providing ions in an ion dose to the substrate by extracting the ions from the plasma through the sheath modifier, the ions impinging upon the substrate at an angle with respect to a perpendicular to the plane of the substrate.Type: ApplicationFiled: July 2, 2013Publication date: January 16, 2014Inventors: Ludovic Godet, Daniel Distaso, John J. Hautala, Christopher Campbell
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Patent number: 8590485Abstract: An ion source, capable of generating high-density wide ribbon ion beam, utilizing inductively coupled plasma production is disclosed. As opposed to conventional ICP sources, the present disclosure describes an ICP source which is not cylindrical. Rather, the source is defined such that its width, which is the dimension along which the beam is extracted, is greater than its height. The depth of the source may be defined to maximize energy transfer from the antenna to the plasma. In a further embodiment, a multicusp magnetic field surrounding the ICP source is used to further increase the current density and improve the uniformity of the extracted ion beam. Ion beam uniformity can also be controlled by means of several independent controls, including gas flow rate, and input RF power.Type: GrantFiled: April 26, 2010Date of Patent: November 26, 2013Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Costel Biloiu, Jay Scheuer, Joseph Olson, Frank Sinclair, Daniel Distaso
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Publication number: 20130146790Abstract: A processing system may include a plasma source for providing a plasma and a workpiece holder arranged to receive ions from the plasma. The processing system may further include a pulsed bias circuit electrically coupled to the plasma source and operable to switch a bias voltage supplied to the plasma source between a high voltage state in which the plasma source is biased positively with respect to ground and a low voltage state in which the plasma source is biased negatively with respect to the ground.Type: ApplicationFiled: December 7, 2011Publication date: June 13, 2013Applicant: Varian Semiconductor Equipment Associates, INC.Inventors: Peter F. Kurunczi, Christopher J. Leavitt, Daniel Distaso, Timothy J. Miller
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Patent number: 8461556Abstract: Blockers in an ion beam blocker unit selectively block or trim an ion beam. In one instance, the ion beam has first current regions and second current regions. These current regions may be unequal. The ion beam is then implanted into a workpiece to form regions with different doses. The workpiece may be scanned so that the entirety of its surface is implanted.Type: GrantFiled: September 8, 2010Date of Patent: June 11, 2013Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Daniel Distaso, Russell J. Low
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Patent number: 8461554Abstract: A processing system may include a plasma source for providing a plasma and a workpiece holder arranged to receive ions from the plasma. The processing system may further include a pulsed bias circuit electrically coupled to the plasma source and operable to switch a bias voltage supplied to the plasma source between a high voltage state in which the plasma source is biased positively with respect to ground and a low voltage state in which the plasma source is biased negatively with respect to the ground.Type: GrantFiled: December 7, 2011Date of Patent: June 11, 2013Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Peter F. Kurunczi, Christopher J. Leavitt, Daniel Distaso, Timothy J. Miller
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Publication number: 20120056107Abstract: An ion beam is generated and the energy of this ion beam is changed from a first energy to a second energy through, for example, acceleration or deceleration. A portion of the ion beam is blocked after the energy is changed and the ion beam is implanted into a workpiece. A plurality of blockers may be used to block the beam. Each blocker may be attached to a drive unit configured to translate one of the blockers in a first direction.Type: ApplicationFiled: September 8, 2010Publication date: March 8, 2012Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.Inventors: Daniel DISTASO, Joseph C. OLSON, Frank SINCLAIR