Abstract: A process is provided to allow session state data to be used across sessions. In the process, a first session is established. The first session includes session state data. Then, a second session is established. It is then determined if the second session desires to access session state data established by the first session. If so, at least some of the session state data from the first session is used during the second session to establish the initial session state during the second session.

Abstract: A capillary flow device useful in double capture assays, such as double capture immunoassays, and a double capture assay. The capillary flow device comprises a capillary track, a sample receptacle, a particle collecting means and, optionally, a magnet and a particle concentrator. The assay method is useful for determining any analyte of interest for which there is a specific binding partner.

Abstract: A single level masking process for producing microelectronic structures, such as magnetic bubble domain devices, which require very fine line widths. This is a subtractive dry process using a very thin, additively plated mask in order to obtain optimum lithographic resolution. Use of the very thin plated mask eliminates the need for a thick resist layer which would adversely affect resolution. In one example, a double layer metallurgy comprising a conductor layer (such as Au) and an overlying magnetically soft layer (such as NiFe) is patterned using a thin Ti (or Cr) mask. The Ti mask is subtractively patterned using a NiFe mask which is itself patterned by electroplating through a thin resist layer. The double layer NiFe/Au structure is patterned to provide devices having high aspect ratio, good pattern acuity, and uniform thicknesses, where the minimum feature is 1 micron or less.

Abstract: A method for etching materials in which a solid, located in the vicinity of the substrate, is used to provide reactive species for etching the substrate. In contrast with prior art etching techniques, an ion beam is provided which strikes a solid source located in the vicinity of the substrate. Reactive gas species are given off by the solid source when it is hit by the ion beam and these species etch the substrate. Etch rates can be enhanced or retarded depending upon the composition of the solid mask. The process has particular utility in etching generally active metals such as Ti, Nb, Ta, NiFe, etc. which undergo a large change in etch rate when mixed gases, such as argon plus O.sub.2, CF.sub.4, CO, or CO.sub.2 (singularly or in combination) are used. As an example, solid TEFLON* can be used to surround the substrate during etching in order to generate active species, such as C and F, for etching of materials such as Ti, Si, NiFe, etc. Conductors and dielectrics can also be etched by this technique.