Patents by Inventor Daniel E. Holcomb

Daniel E. Holcomb has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230237143
    Abstract: Embodiments described herein include a system, apparatus, article of manufacture, method and/or computer program product embodiments, and/or combinations and sub-combinations thereof, for delay-based physical unclonable functions (PUFs) for chiplets to verify system integrity. A die may include a plurality of chiplets including a first chiplet and a second chiplet. The first chiplet may be connected to the second chiplet via an interposer. As part of an authentication process, the first chiplet may request the second chiplet to transmit a signal via one or more wires of the interposer. A first signature based on the characteristics of the transmitted signal may be measured at a first time, which constitutes the first evaluation of the PUF. The first signature may be used as a baseline comparison for subsequent signatures as a means to confirm that the chiplets, interposers, and/or interconnects have not been altered or modified.
    Type: Application
    Filed: January 25, 2023
    Publication date: July 27, 2023
    Inventors: Nimit Nguansiri, Daniel E. Holcomb, Aleksa Deric
  • Patent number: 10038564
    Abstract: A technique is presented for performing a physical unclonable function (PUF) using an array of SRAM cells. The technique can be viewed as an attempt to read multiple cells in a column at the same time, creating contention that is resolved according to process variation. An authentication challenge is issued to the array of SRAM cells by activating two or more wordlines concurrently. The response is simply the value that the SRAM produces from a read operation when the challenge condition is applied. The number of challenges that can be applied the array of SRAM cells grows exponentially with the number of SRAM rows and these challenges can be applied at any time without power cycling.
    Type: Grant
    Filed: August 23, 2017
    Date of Patent: July 31, 2018
    Assignee: The Regents of The University of Michigan
    Inventors: Daniel E. Holcomb, Kevin Fu
  • Publication number: 20170373862
    Abstract: A technique is presented for performing a physical unclonable function (PUF) using an array of SRAM cells. The technique can be viewed as an attempt to read multiple cells in a column at the same time, creating contention that is resolved according to process variation. An authentication challenge is issued to the array of SRAM cells by activating two or more wordlines concurrently. The response is simply the value that the SRAM produces from a read operation when the challenge condition is applied. The number of challenges that can be applied the array of SRAM cells grows exponentially with the number of SRAM rows and these challenges can be applied at any time without power cycling.
    Type: Application
    Filed: August 23, 2017
    Publication date: December 28, 2017
    Inventors: Daniel E. HOLCOMB, Kevin FU
  • Patent number: 9787481
    Abstract: A technique is presented for performing a physical unclonable function (PUF) using an array of SRAM cells. The technique can be viewed as an attempt to read multiple cells in a column at the same time, creating contention that is resolved according to process variation. An authentication challenge is issued to the array of SRAM cells by activating two or more wordlines concurrently. The response is simply the value that the SRAM produces from a read operation when the challenge condition is applied. The number of challenges that can be applied the array of SRAM cells grows exponentially with the number of SRAM rows and these challenges can be applied at any time without power cycling.
    Type: Grant
    Filed: August 28, 2015
    Date of Patent: October 10, 2017
    Assignee: THE REGENTS OF THE UNIVERSITY OF MICHIGAN
    Inventors: Daniel E. Holcomb, Kevin Fu
  • Publication number: 20160065379
    Abstract: A technique is presented for performing a physical unclonable function (PUF) using an array of SRAM cells. The technique can be viewed as an attempt to read multiple cells in a column at the same time, creating contention that is resolved according to process variation. An authentication challenge is issued to the array of SRAM cells by activating two or more wordlines concurrently. The response is simply the value that the SRAM produces from a read operation when the challenge condition is applied. The number of challenges that can be applied the array of SRAM cells grows exponentially with the number of SRAM rows and these challenges can be applied at any time without power cycling.
    Type: Application
    Filed: August 28, 2015
    Publication date: March 3, 2016
    Inventors: Daniel E. HOLCOMB, Kevin FU
  • Publication number: 20140005967
    Abstract: The present disclosure provides a method and a system for characterizing and identifying an electronic device using a physical fingerprint. In one aspect, the characterizing method includes determining the physical fingerprint of a test device using selected memory cells of an SRAM array in the test device, and storing data associated with the physical fingerprint in a database. The physical fingerprint of the test device includes data retention voltages respectfully corresponding to the selected memory cells. In one aspect, the identifying method includes characterizing a test device using data retention voltages of selected memory cells in the test device as a physical fingerprint of the test device, and comparing the physical fingerprint of the test device with a predetermined fingerprint of a target device.
    Type: Application
    Filed: June 28, 2013
    Publication date: January 2, 2014
    Inventors: Kevin E. Fu, Daniel E. Holcomb, Wayne P. Burleson
  • Patent number: 7529118
    Abstract: A memory element which includes a family of fault-tolerant storage elements using complementary metal-oxide-semiconductor (CMOS) technology is provided. The memory element provides arbitrary levels of redundancy, allowing the tolerance of multiple single event upsets due to particle hits. The memory element may be used in memory arrays such as caches and register files, and clocked registers and latches found in data path and control structures.
    Type: Grant
    Filed: March 28, 2007
    Date of Patent: May 5, 2009
    Assignee: Intel Corporation
    Inventors: Wayne Burleson, Shubhendu S. Mukherjee, Vinod Ambrose, Daniel E. Holcomb
  • Publication number: 20080239793
    Abstract: A memory element which includes a family of fault-tolerant storage elements using complementary metal-oxide-semiconductor (CMOS) technology is provided. The memory element provides arbitrary levels of redundancy, allowing the tolerance of multiple single event upsets due to particle hits. The memory element may be used in memory arrays such as caches and register files, and clocked registers and latches found in data path and control structures.
    Type: Application
    Filed: March 28, 2007
    Publication date: October 2, 2008
    Inventors: Wayne Burleson, Shubhendu S. Mukherjee, Vinod Ambrose, Daniel E. Holcomb