Abstract: In a system and method, the emitted beams of multiple diode bar array assemblies are combined to achieve an increase in the resulting power density in the combined output beam, while addressing the need for heat distribution in each of the individual assemblies. The present invention enables the combination of output planes of illumination, to form a single, merged beam of area Ag having intensity IM˜M*Istack and brightness BM˜M*Bstack, where Istack and Bstack refer respectively to the intensity and brightness of the output plane of illumination of a single stacked array, and where IM and BM refer respectively to the intensity and brightness of the combined output plane of illumination of M stacked arrays. In this manner, the present invention is useful in applications where there is a need for high-intensity, high-brightness light energy.

Abstract: In a system and method, the emitted beams of multiple diode bar array assemblies are combined to achieve an increase in the resulting power density in the combined output beam, while addressing the need for heat distribution in each of the individual assemblies. The present invention enables the combination of output planes of illumination, to form a single, merged beam of area Ag having intensity IM˜M*Istack and brightness BM˜M*Bstack, where Istack and Bstack refer respectively to the intensity and brightness of the output plane of illumination of a single stacked array, and where IM and BM refer respectively to the intensity and brightness of the combined output plane of illumination of M stacked arrays. In this manner, the present invention is useful in applications where there is a need for high-intensity, high-brightness light energy.

Abstract: In a system and method, the emitted beams of multiple diode bar array assemblies are combined to achieve an increase in the resulting power density in the combined output beam, while addressing the need for heat distribution in each of the individual assemblies. The present invention enables the combination of output planes of illumination, to form a single, merged beam of area Ag having intensity IM˜M*Istack and brightness BM˜M*Bstack, where Istack and Bstack refer respectively to the intensity and brightness of the output plane of illumination of a single stacked array, and where IM and BM refer respectively to the intensity and brightness of the combined output plane of illumination of M stacked arrays. In this manner, the present invention is useful in applications where there is a need for high-intensity, high-brightness light energy.

Abstract: A zig-zag laser has the ability to generate a high power beam while effectively removing heat without degrading the beam quality. The laser has a series of gaps interposed between the thin slabs, the gain medium, and between the thin slabs and the quartz windows to receive coolant and cool the cell assembly. The coolant flows transversely relative to the path of the laser and the flow of the coolant is in the opposite direction on each side of the thin slab to minimize the temperature gradient. The gaps in conjunction with the inner channel portions in the secondary manifold flow the coolant through the cell assembly in a laminar manner therein not degrading the laser beam quality. A transparent quartz/quartz interface between the secondary manifold and the cell assembly allow the fluorescence to move away from the cell assembly and minimizes heat in the cell assembly.

Abstract: Amplified spontaneous emission (ASE) ducts are disclosed for use with various gain media. An ASE duct may be configured and arranged to remove ASE from solid state or liquid gain media and transmit the ASE to an exterior optical medium. The refractive index of an ASE duct is selected as desired based on the refractive index of a gain medium and an exterior optical medium. An ASE duct may include first and second boundary surfaces joined at a vertex having an included angle that allows ASE (light) reflected off on one boundary surface to be incident on the another boundary surface at less than the critical angle and transmitted outside of the ASE duct. Laser systems using ASE ducts and methods of using and manufacturing ASE ducts are disclosed.

Abstract: Embodiments of the present invention are directed to staggered arrays of laser diode bars positioned on stepped support structures. Optical waveguides may direct the outputs of the individual diode bars to a desired location, for example, a common output plane. The optical waveguides may be glass plates in certain embodiments. Waste heat generated by the diode bars may be removed from the support structures at certain locations and as a result, the diode bars may be closely positioned with respect to each other. By closely positioning the laser diode bars and directing the diode bar outputs to a desired orientation, the effective brightness and fluence may be increased for a given output area and operational power compared to the prior art. Associated methods of manufacturing staggered array couplers and producing high-power pump energy are also described.

Abstract: In a system and method, the emitted beams of multiple diode bar array assemblies are combined to achieve an increase in the resulting power density in the combined output beam, while addressing the need for heat distribution in each of the individual assemblies. The present invention enables the combination of output planes of illumination, to form a single, merged beam of area Ag having intensity IM˜M*Istack and brightness BM˜M*Bstack, where Istack and Bstack refer respectively to the intensity and brightness of the output plane of illumination of a single stacked array, and where IM and BM refer respectively to the intensity and brightness of the combined output plane of illumination of M stacked arrays. In this manner, the present invention is useful in applications where there is a need for high-intensity, high-brightness light energy.

Abstract: A semiconductor structure includes a first cladding layer, a second cladding layer, and one or more semiconductor active regions. An optical resonator is formed by the inclusion of a first mirror and a second mirror at opposite ends of the structure with respect to the optical axis. One or more angled facets provide the semiconductor structure with optical coupling. The associated beam path along an optical axis within the structure is a zigzag path, which is substantially independent of the height of the active region. A signal generator and an optical amplifier may be formed with the structure. An optical modulator, multiplexer, and demultiplexer may also use the structure.

Abstract: In an apparatus and method for remote ultrasonic determination of thin material properties using signal correlation, a method and apparatus are provided by which an arbitrarily-oriented anisotropic thin material may be interrogated for characterizing an unknown material property value thereof. The unknown material property may comprise for example temperature, pressure, elastic constants, density, hardness, composition, crystal orientation, grain size, and residual stress, or any material property that is variable with respect to known physical parameters of the material, for example known material elastic constants and/or density. In a first embodiment, theoretical signals are generated, for example a theoretical signal matrix, to characterize a material property value of a thin anisotropic material. A model of the thin material is generated comprising the behavior of the known material physical properties as functions of the unknown material property value to be characterized.

Abstract: In an apparatus and method for remote ultrasonic determination of thin material properties, a match filter calibration technique is employed. For a plurality of known material property values and known material thicknesses, an elastic stress wave is generated in the material at a source location. The intensity of a signal generated by the elastic stress wave is sensed at a sense location positioned a known distance from the source location. A feature is selected from among the sensed signals which demonstrates minimal thickness dependents from a plurality of known material thicknesses. The selected feature is applied to the sensed signals to determine propagation time of the signals over the known distance. A calibration curve is then generated to characterize the relationship between signal propagation time and material property value for each material thickness.

Abstract: Disclosed herein is an interferometric-based materials analysis system (10) that employs a novel combination of laser beam shaping and pointing techniques, the use of a low cost, rugged, and compact diode laser (22) as a detection laser, and the use of signal processing techniques that compensate for inherent instabilities and short-term drift in the diode laser. A matched filter processing technique is disclosed for processing interferometrically-obtained data points from a target being analyzed. The matched filter technique is shown to be especially useful for detecting and analyzing Lamb modes within thin targets, such as a silicon wafer undergoing a rapid thermal processing cycle. Also disclosed is a method and apparatus for interferometrically monitoring a target to determine, in accordance with predetermined criteria, an occurrence of a period of time that is optimum for obtaining a data point.

Abstract: Disclosed herein is an interferometric-based materials analysis system (10) that employs a novel combination of laser beam shaping and pointing techniques, the use of a low cost, rugged, and compact diode laser (22) as a detection laser, and the use of signal processing techniques that compensate for inherent instabilities and short-term drift in the diode laser. A matched filter processing technique is disclosed for processing interferometrically-obtained data points from a target being analyzed. The matched filter technique is shown to be especially useful for detecting and analyzing Lamb modes within thin targets, such as a silicon wafer undergoing a rapid thermal processing cycle. Also disclosed is a method and apparatus for interferometrically monitoring a target to determine, in accordance with predetermined criteria, an occurrence of a period of time that is optimum for obtaining a data point.