Abstract: A memory system and method for simplifying scheduling on a flash interface module and reducing latencies in a multi-die environment are provided. In one embodiment, a memory die is provided comprising a memory array, an interface, at least one register, and circuitry. The circuitry is configured to receive, via the interface, a pause command from a controller in communication with the memory die; and in response to receiving the pause command: pause a data transfer between the memory die and the controller; and while the data transfer is paused and until a resume command is received, maintain state(s) of the at least one register irrespective of inputs received via the interface that would otherwise change the state(s) of the at least one register. Other embodiments are provided.

Abstract: A storage device utilizing read look ahead (RLA) may utilize auxiliary or spare latches as a RLA cache for storing pre-fetch data. The RLA may predict the next commands and do a speculative read to the flash using the latches for RLA storage. The auxiliary/spare latches may be present on a plane or die of non-volatile memory and may be different from the transfer data latch (XDL) that transfers data from the memory and the host. When the XDL is backed up, sense commands may still be performed and the data is stored in the auxiliary latches before being transferred with the XDL.

Abstract: A memory system and method for reducing read disturb errors are disclosed. In one embodiment, a memory system is provided comprising a plurality of blocks of memory and a controller. The controller is configured to detect a read disturb error in a block, identify data that caused the read disturb error, and move the data that caused the read disturb error to a block with a higher read endurance. This can be done by assigning read counters to blocks to determine frequently-read data, and storing that data in a separate block until it is less frequently read and will likely not cause additional read disturb errors.

Abstract: A storage module and method for datapath bypass are disclosed. In one embodiment, a storage module begins to perform a read operation that reads a set of code words from the memory and attempts to perform an error detection and correction operation on one of the read code words. In response to determining that the code word has an uncorrectable error, the storage module reads the other code words in the set but bypasses the error detection and correction operation on those other code words. The code word that had the uncorrectable error and the other code words are re-read, wherein at least the code word with the uncorrectable error is re-read with a different read condition. The storage module then attempts to perform the error detection and correction operation on the re-read code words. Other embodiments are provided.

Abstract: A memory system and method for delta writes are provided. In one embodiment, a memory system receives a request to store data in the memory and determines whether the data requested to be stored in the memory is a modified version of data already stored in the memory. If it is, the memory system compares the data requested to be stored in the memory with the data already stored in the memory to identify differences between the data to be stored and the data already stored. The memory system then stores the identified differences in the memory, along with a table that maps the stored identified differences to corresponding locations in the data already stored in the memory. Other embodiments are provided.

Abstract: A storage module and method for virtual abort are disclosed. In one embodiment, a virtual abort of a read command is provided. The read command triggers a read operation that comprises reading data from the storage module's memory, processing the data by at least one processing module as the data moves along a data path from the memory to the storage module's host interface module, and then providing the data to a host via the host interface module. When an abort command is received, the storage module allows the data that is read from the memory to be processed by the at least one processing module as the data moves along the data path to the host interface module but prevents the host interface module from providing the data to the host. In another embodiment, a virtual abort of a write command is provided.

Abstract: A memory system and method for simplifying scheduling on a flash interface module and reducing latencies in a multi-die environment are provided. In one embodiment, a memory die is provided comprising a memory array, an interface, at least one register, and circuitry. The circuitry is configured to receive, via the interface, a pause command from a controller in communication with the memory die; and in response to receiving the pause command: pause a data transfer between the memory die and the controller; and while the data transfer is paused and until a resume command is received, maintain state(s) of the at least one register irrespective of inputs received via the interface that would otherwise change the state(s) of the at least one register. Other embodiments are provided.

Abstract: A storage module and method for on-chip copy gather are provided. In one embodiment, a storage module is provided with a memory comprising a plurality of word lines and a plurality of data latches. The memory copies data from a first word line into a first data latch and copies data from a second word line into a second data latch. The memory then copies only some of the data from the first data latch and only some of the data from the second data latch into a third data latch. After that, the memory copies the data from the third data latch to a third word line. In another embodiment, a storage module is provided comprising a memory and an on-chip copy gather module. Other embodiments are provided.

Abstract: A storage device utilizing read look ahead (RLA) may utilize auxiliary or spare latches as a RLA cache for storing pre-fetch data. The RLA may predict the next commands and do a speculative read to the flash using the latches for RLA storage. The auxiliary/spare latches may be present on a plane or die of non-volatile memory and may be different from the transfer data latch (XDL) that transfers data from the memory and the host. When the XDL is backed up, sense commands may still be performed and the data is stored in the auxiliary latches before being transferred with the XDL.

Abstract: A storage module and method are provided for determining ready/busy status of a plurality of memory dies. In one embodiment, a bus has a ready/busy line that is shared among the plurality of memory dies, and a time-division multiplex signal on the shared ready/busy line is used to communicate the ready/busy status of each of the memory dies. In another embodiment, each of the memory dies sends its ready/busy status to the storage controller using a different one of a plurality of data lines in the bus. In yet another embodiment, each of the memory dies sends a pulse across the ready/busy line with a different pulse width. To avoid collisions, each memory die waits a different number of clock cycles before attempting to send its pulse status after determining that the shared ready/busy line is in use.

Abstract: A storage controller is configured to find a last-written page in a block in a memory by sending a command to the memory to read a page of data, receiving at least some of the data from that page, and analyzing the at least some of the data from that page to determine if that page is a written page. In one embodiment, the storage controller instructs the memory to read the page of data using a sense time that is shorter than a sense time used to read a page of data in response to a read request from a host controller. Additionally or alternatively, the amount of the data received by the storage controller can be less than the amount of data received when reading a page of data in response to a read request from a host controller.

Abstract: A storage module and method are provided for using healing effects of a quarantine process. In one embodiment, a storage module is provided comprising a controller and a memory. The controller is configured to identify a set of memory cells in the memory that contains a bit error rate above a threshold, wherein the bit error rate is above the threshold due to trapped charge in dielectrics of the memory cells. The controller is also configured to quarantine the set of memory cells for a period of time, wherein while the set of memory cells is quarantined, heat generated by the storage module anneals the set of memory cells to at least partially remove the trapped charge.

Abstract: In one embodiment, a storage module comprises a controller and a memory having a plurality of bit lines. The controller detects an uncorrectable error in a code word read from the memory, determines location(s) of grown bad bit line(s) that contributed to the error in the code word being uncorrectable, and uses the determined location(s) of the grown bad bit line(s) to attempt to correct the error in the code word.

Abstract: A memory die is provided comprising a non-volatile memory organized in physical pages, a transfer data latch in communication with the non-volatile memory, at least one auxiliary data latch in communication with the transfer data latch, and circuitry. The circuitry is configured to receive a plurality of sense commands, wherein each sense command indicates a physical page in the non-volatile memory to be sensed and a portion of the physical page to be stored in the at least one auxiliary data latch. For each sense command, the circuitry is configured to store data from the physical page sensed by the sense command in the transfer data latch and move data from the portion of the physical page indicated by the sense command to an available location in the at least one auxiliary data latch.

Abstract: A memory system and method for reducing read disturb errors are disclosed. In one embodiment, a memory system is provided comprising a plurality of blocks of memory and a controller. The controller is configured to detect a read disturb error in a block, identify data that caused the read disturb error, and move the data that caused the read disturb error to a block with a higher read endurance. This can be done by assigning read counters to blocks to determine frequently-read data, and storing that data in a separate block until it is less frequently read and will likely not cause additional read disturb errors.

Abstract: A memory system and method for delta writes are provided. In one embodiment, a memory system receives a request to store data in the memory and determines whether the data requested to be stored in the memory is a modified version of data already stored in the memory. If it is, the memory system compares the data requested to be stored in the memory with the data already stored in the memory to identify differences between the data to be stored and the data already stored. The memory system then stores the identified differences in the memory, along with a table that maps the stored identified differences to corresponding locations in the data already stored in the memory. Other embodiments are provided.

Abstract: A memory system or flash card may be exposed to elapsed time or increased temperature conditions which may degrade the memory. For example, extended time periods or high temperature conditions may hinder data retention in a memory device. An estimate of elapsed time and temperature conditions may be useful for memory management. An algorithm that periodically identifies one or more sentinel blocks in the memory device and measures the data retention shift in those sentinel blocks can calculate a scalar value that approximates the combined effect of elapsed time and/or temperature conditions.

Abstract: A storage module and method for datapath bypass are disclosed. In one embodiment, a storage module begins to perform a read operation that reads a set of code words from the memory and attempts to perform an error detection and correction operation on one of the read code words. In response to determining that the code word has an uncorrectable error, the storage module reads the other code words in the set but bypasses the error detection and correction operation on those other code words. The code word that had the uncorrectable error and the other code words are re-read, wherein at least the code word with the uncorrectable error is re-read with a different read condition. The storage module then attempts to perform the error detection and correction operation on the re-read code words. Other embodiments are provided.

Abstract: A storage module and method for on-chip copy gather are provided. In one embodiment, a storage module is provided with a memory comprising a plurality of word lines and a plurality of data latches. The memory copies data from a first word line into a first data latch and copies data from a second word line into a second data latch. The memory then copies only some of the data from the first data latch and only some of the data from the second data latch into a third data latch. After that, the memory copies the data from the third data latch to a third word line. In another embodiment, a storage module is provided comprising a memory and an on-chip copy gather module. Other embodiments are provided.

Abstract: A storage module and method are provided for using healing effects of a quarantine process. In one embodiment, a storage module is provided comprising a controller and a memory. The controller is configured to identify a set of memory cells in the memory that contains a bit error rate above a threshold, wherein the bit error rate is above the threshold due to trapped charge in dielectrics of the memory cells. The controller is also configured to quarantine the set of memory cells for a period of time, wherein while the set of memory cells is quarantined, heat generated by the storage module anneals the set of memory cells to at least partially remove the trapped charge.