Patents by Inventor Daniel Edward Engelhard

Daniel Edward Engelhard has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Adaptive correlation of pattern resist structures using optical metrology
    Patent number: 7440881
    Abstract: A correlation between develop inspect (DI) and final inspect (FI) profile parameters are established empirically with test wafers. During production, a wafer is measured at DI phase to obtain DI profile parameters and FI phase profile parameters are predicted according to the DI profile parameters and the established correlation. Each wafer is subsequently measured at FI phase to obtain actual FI profile parameters and the correlation is updated with actual DI and FI profile parameters.
    Type: Grant
    Filed: August 2, 2004
    Date of Patent: October 21, 2008
    Assignee: Timbre Technologies, Inc.
    Inventors: Daniel Edward Engelhard, Manuel B. Madriaga
  • Adaptive correlation of pattern resist structures using optical metrology
    Patent number: 6791679
    Abstract: A correlation between develop inspect (DI) and final inspect (FI) profile parameters are established empirically with test wafers. During production, a wafer is measured at DI phase to obtain DI profile parameters and FI phase profile parameters are predicted according to the DI profile parameters and the established correlation. Each wafer is subsequently measured at FI phase to obtain actual FI profile parameters and the correlation is updated with actual DI and FI profile parameters.
    Type: Grant
    Filed: February 4, 2003
    Date of Patent: September 14, 2004
    Assignee: Timbre Technologies, Inc.
    Inventors: Daniel Edward Engelhard, Manuel B. Madriaga
  • Adaptive correlation of pattern resist structures using optical metrology
    Publication number: 20040152221
    Abstract: A correlation between develop inspect (DI) and final inspect (FI) profile parameters are established empirically with test wafers. During production, a wafer is measured at DI phase to obtain DI profile parameters and FI phase profile parameters are predicted according to the DI profile parameters and the established correlation. Each wafer is subsequently measured at FI phase to obtain actual FI profile parameters and the correlation is updated with actual DI and FI profile parameters.
    Type: Application
    Filed: February 4, 2003
    Publication date: August 5, 2004
    Inventors: Daniel Edward Engelhard, Manuel B. Madriaga