Abstract: A process produces a SiC bulk monocrystal by sublimation growth. A SiC seed crystal is arranged in a crystal growth region of a growth crucible, and SiC source material is introduced into a SiC reservoir region. A SiC growth gas phase is generated in the crystal growth region by sublimating the SiC source material and transporting the sublimated gaseous components there. The SiC bulk monocrystal has a central crystal longitudinal axis growing on the SiC seed crystal by deposition from the SiC growth gas phase. During an annealing and cooling phase, the previously grown SiC bulk monocrystal is cooled, an axial cooling temperature gradient measured in the direction of the central crystal longitudinal axis is provided within the SiC bulk monocrystal, and an axial quotient of the axial cooling temperature gradient and an axial growth temperature gradient has at most an axial comparison value of 0.4.