Abstract: A semiconductor die includes a semiconductor body having a gate, a source contact, and a drain contact thereon, a metal contact structure on the semiconductor body and electrically connected to the gate, the source contact, or the drain contact, and an encapsulation structure. The encapsulation structure includes first and second encapsulation layers of respective non-conductive materials stacked on the metal contact structure, and an opening extending therethrough to expose the metal contact structure. The opening includes a sidewall having a substantially continuous slope that extends through the first and second encapsulation layers to the metal contact structure. Related devices and fabrication methods are also discussed.

Abstract: A transistor amplifier package includes a package substrate comprising conductive patterns exposed by solder mask patterns at a surface thereof, and at least one transistor die comprising a semiconductor structure attached to the surface of the package substrate by a solder material and aligned by the solder mask patterns such that respective gate, drain, and/or source terminals of the at least one transistor die are electrically connected to respective ones of the conductive patterns. Related transistor amplifiers and fabrication methods are also discussed.

Abstract: A transistor amplifier package includes a package substrate comprising conductive patterns exposed by solder mask patterns at a surface thereof, and at least one transistor die comprising a semiconductor structure attached to the surface of the package substrate by a solder material and aligned by the solder mask patterns such that respective gate, drain, and/or source terminals of the at least one transistor die are electrically connected to respective ones of the conductive patterns. Related transistor amplifiers and fabrication methods are also discussed.

Abstract: A transistor device includes a semiconductor body and a non-ohmic contact on the semiconductor body. The non-ohmic contact includes a phonon scattering layer on the semiconductor body, a protection layer on a surface of the phonon scattering layer opposite the semiconductor body, and a contact layer on a surface of the protection layer opposite the phonon scattering layer. The phonon scattering layer has a work function in a range of about 4.5 eV to about 5.7 eV and a melting point in a range of about 1550° C. to about 3200° C.

Abstract: A transistor amplifier package includes a package substrate comprising conductive patterns exposed by solder mask patterns at a surface thereof, and at least one transistor die comprising a semiconductor structure attached to the surface of the package substrate by a solder material and aligned by the solder mask patterns such that respective gate, drain, and/or source terminals of the at least one transistor die are electrically connected to respective ones of the conductive patterns. Related transistor amplifiers and fabrication methods are also discussed.

Abstract: A semiconductor die includes a semiconductor body having a gate, a source contact, and a drain contact thereon, a metal contact structure on the semiconductor body and electrically connected to the gate, the source contact, or the drain contact, and an encapsulation structure. The encapsulation structure includes first and second encapsulation layers of respective non-conductive materials stacked on the metal contact structure, and an opening extending therethrough to expose the metal contact structure. The opening includes a sidewall having a substantially continuous slope that extends through the first and second encapsulation layers to the metal contact structure. Related devices and fabrication methods are also discussed.

Abstract: A semiconductor die includes a semiconductor body, and a multi-layer environmental barrier on the semiconductor body. The multi-layer environmental barrier includes a plurality of sublayers that are stacked on the semiconductor body. Each of the sublayers comprises a respective stress in one or more directions, where the respective stresses of at least two of the sublayers are different. The sublayers may include a first stressor sublayer comprising first stress, and a second stressor sublayer comprising a second stress that at least partially compensates for the first stress in the one or more directions. Related devices and methods of fabrication are also discussed.

Abstract: A pressure sensor for measuring a pressure of a fluid, the pressure sensor including: a sensor element for measuring the pressure of the fluid; a control and/or evaluation circuit for controlling and/or evaluating a measuring signal of the sensor element; a circuit carrier, the control and/or evaluation circuit being disposed on the circuit carrier; a carrier element, the circuit carrier being fastened on the carrier element; and a housing element, the carrier element together with the circuit carrier being fastened in the housing element in a form-locking and/or force-locking manner, wherein the carrier element is configured in one piece from an electrically non-conducting material.

Abstract: A pressure sensor for detecting a pressure of a fluid medium in a measuring chamber and a method for manufacturing the pressure sensor are provided. The pressure sensor includes a pressure connector, with the aid of which the pressure sensor is attachable to or in the measuring chamber, and a sensor element for detecting the pressure of the fluid medium. A feed channel is formed in the pressure connector. The sensor element is situated on a substrate. The feed channel is sealed off by the substrate and is designed to feed the fluid medium to the sensor element. The pressure connector and the substrate are designed as one piece and the sensor element is printed onto the substrate.

Abstract: A pressure sensor for measuring a pressure of a fluid, the pressure sensor including: a sensor element for measuring the pressure of the fluid; a control and/or evaluation circuit for controlling and/or evaluating a measuring signal of the sensor element; a circuit carrier, the control and/or evaluation circuit being disposed on the circuit carrier; a carrier element, the circuit carrier being fastened on the carrier element; and a housing element, the carrier element together with the circuit carrier being fastened in the housing element in a form-locking and/or force-locking manner, wherein the carrier element is configured in one piece from an electrically non-conducting material.

Abstract: A device is provided for sensing a pressure of a fluid medium, having a pressure-sensing element disposed in a sensor housing, the sensor housing having a first housing part provided with a pressure connector in the form of a metallic threaded part, and a second housing part provided with an electrical connection, the first housing part at least sectionally having an outer case formed as an external drive. The first housing part is injection-molded as a plastic injection-molded part onto the pressure connector.

Abstract: A pressure sensor for detecting a pressure of a fluid medium in a measuring chamber and a method for manufacturing the pressure sensor are provided. The pressure sensor includes a pressure connector, with the aid of which the pressure sensor is attachable to or in the measuring chamber, and a sensor element for detecting the pressure of the fluid medium. A feed channel is formed in the pressure connector. The sensor element is situated on a substrate. The feed channel is sealed off by the substrate and is designed to feed the fluid medium to the sensor element. The pressure connector and the substrate are designed as one piece and the sensor element is printed onto the substrate.

Abstract: A device is provided for sensing a pressure of a fluid medium, having a pressure-sensing element disposed in a sensor housing, the sensor housing having a first housing part provided with a pressure connector in the form of a metallic threaded part, and a second housing part provided with an electrical connection, the first housing part at least sectionally having an outer case formed as an external drive. The first housing part is injection-molded as a plastic injection-molded part onto the pressure connector.

Abstract: A transistor device includes a semiconductor body, a spacer layer, and a field plate. The spacer layer is over at least a portion of a surface of the semiconductor body. The field plate is over at least a portion of the spacer layer, and includes a first current carrying layer, a refractory metal interposer layer over the first current carrying layer, and a second current carrying layer over the refractory metal interposer layer. By including the refractory metal interposer layer between the first current carrying layer and the second current carrying layer, the electromigration of metals in the field plate is significantly reduced. Since electromigration of metals in the field plate is a common cause of transistor device failures, reducing the electromigration of metals in the field plate improves the reliability and lifetime of the transistor device.

Abstract: A transistor device includes a semiconductor body, a spacer layer, and a field plate. The spacer layer is over at least a portion of a surface of the semiconductor body. The field plate is over at least a portion of the spacer layer, and includes a first current carrying layer, a refractory metal interposer layer over the first current carrying layer, and a second current carrying layer over the refractory metal interposer layer. By including the refractory metal interposer layer between the first current carrying layer and the second current carrying layer, the electromigration of metals in the field plate is significantly reduced. Since electromigration of metals in the field plate is a common cause of transistor device failures, reducing the electromigration of metals in the field plate improves the reliability and lifetime of the transistor device.