Patents by Inventor Daniel F Gealy

Daniel F Gealy has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods of making crystalline tantalum pentoxide
    Patent number: 8673390
    Abstract: There is disclosed a method of forming crystalline tantalum pentoxide on a ruthenium-containing material having an oxygen-containing surface wherein the oxygen-containing surface is contacted with a treating composition, such as water, to remove at least some oxygen. Crystalline tantalum pentoxide is formed on at least a portion of the surface having reduced oxygen content.
    Type: Grant
    Filed: September 13, 2012
    Date of Patent: March 18, 2014
    Assignee: Micron Technology, Inc.
    Inventors: Vishwanath Bhat, Rishikesh Krishnan, Daniel F. Gealy
  • Methods of making crystalline tantalum pentoxide
    Patent number: 8282988
    Abstract: There is disclosed a method of forming crystalline tantalum pentoxide on a ruthenium-containing material having an oxygen-containing surface wherein the oxygen-containing surface is contacted with a treating composition, such as water, to remove at least some oxygen. Crystalline tantalum pentoxide is formed on at least a portion of the surface having reduced oxygen content.
    Type: Grant
    Filed: August 16, 2011
    Date of Patent: October 9, 2012
    Assignee: Micron Technology, Inc
    Inventors: Vishwanath Bhat, Rishikesh Krishnan, Daniel F. Gealy
  • Apparatus for stabilizing high pressure oxidation of a semiconductor device
    Patent number: 7279435
    Abstract: A method and apparatus for preventing N2O from becoming super critical during a high pressure oxidation stage within a high pressure oxidation furnace are disclosed. The method and apparatus utilize a catalyst to catalytically disassociate N2O as it enters the high pressure oxidation furnace. This catalyst is used in an environment of between five (5) atmospheres to twenty-five (25) atmospheres N2O and a temperature range of 600° C. to 750° C., which are the conditions that lead to the N2O going super critical. By preventing the N2O from becoming super critical, the reaction is controlled that prevents both temperature and pressure spikes. The catalyst can be selected from the group of noble transition metals and their oxides. This group can comprise palladium, platinum, iridium, rhodium, nickel, silver, and gold.
    Type: Grant
    Filed: September 2, 2004
    Date of Patent: October 9, 2007
    Assignee: Micron Technology, Inc.
    Inventors: Daniel F. Gealy, Dave Chapek, Scott DeBoer, Husam N. Al-Shareef, Randhir Thakur
  • Method for stabilizing high pressure oxidation of a semiconductor device
    Patent number: 6955996
    Abstract: A method and apparatus for preventing N2O from becoming super critical during a high pressure oxidation stage within a high pressure oxidation furnace are disclosed. The method and apparatus utilize a catalyst to catalytically disassociate N2O as it enters the high pressure oxidation furnace. This catalyst is used in an environment of between five atmospheres and 25 atmospheres N2O and a temperature range of 600° to 750° C., which are the conditions that lead to the N2O going super critical. By preventing the N2O from becoming super critical, the reaction is controlled that prevents both temperature and pressure spikes. The catalyst can be selected from the group of noble transition metals and their oxides. This group can comprise palladium, platinum, iridium, rhodium, nickel, silver, and gold.
    Type: Grant
    Filed: July 22, 2003
    Date of Patent: October 18, 2005
    Assignee: Micron Technology, Inc.
    Inventors: Daniel F Gealy, Dave Chapek, Scott DeBoer, Husam N. Al-Shareef, Randhir Thakur
  • System and method for inhibiting imprinting of capacitor structures of a memory
    Patent number: 6522570
    Abstract: A system and method for inhibiting the imprinting of capacitor structures employed by memory cells by occasionally changing charge states of the capacitors to a complementary charge state.
    Type: Grant
    Filed: December 13, 2001
    Date of Patent: February 18, 2003
    Assignee: Micron Technology, Inc.
    Inventors: Cem Basceri, Daniel F. Gealy