Patents by Inventor Daniel Felnhofer
Daniel Felnhofer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20140210836Abstract: This disclosure provides systems, methods and apparatus for reducing image artifacts that arise when a display is exposed to sunlight over time. Various implementations disclosed herein can be implemented to prevent charge injection from inducing a negative offset voltage shift for display elements in the display. In one aspect, a buffer layer is applied to block electrons from being photoelectrically ejected from a movable reflective layer of a display element and into a stationary optical stack of the display element.Type: ApplicationFiled: January 28, 2013Publication date: July 31, 2014Applicant: QUALCOMM MEMS TECHNOLOGIES, INC.Inventors: Fan Zhong, Guneet Sethi, Daniel Felnhofer, Thanh N. Tu
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Publication number: 20140099992Abstract: A mobile device may include a sensor array. The sensor array may be a touch sensor array, such as a projected capacitive touch (PCT) sensor array. The mobile device may be configured to determine whether one or more sensor signals from the sensor array indicate an ear gesture and/or the presence of an ear. One or more device operations may be invoked according to the determination.Type: ApplicationFiled: October 9, 2012Publication date: April 10, 2014Applicant: QUALCOMM MEMS TECHNOLOGIES, INC.Inventors: David William Burns, Daniel Felnhofer, Donald John Elloway
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Publication number: 20130135620Abstract: This disclosure provides systems, methods and apparatus, including computer programs encoded on computer storage media, for testing an electromechanical systems (EMS) device. In one aspect, a laser is directed at a driven EMS device, and the reflected light pattern is analyzed to provide information regarding the characteristics of the driven EMS device. In some aspects, the reflected light pattern is analyzed to determine a resonant frequency of the EMS device or the damping forces acting on the EMS device. The resonant frequency can then be used to determine stresses within the EMS device, or pressure or temperature within a device package encapsulating the EMS device.Type: ApplicationFiled: November 30, 2011Publication date: May 30, 2013Applicant: QUALCOMM MEMS Technologies, Inc.Inventors: Wilhelmus A. De Groot, Daniel Felnhofer
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Publication number: 20130124116Abstract: This disclosure provides systems, methods and apparatus, including computer programs encoded on computer storage media, for estimating the lifetime or remaining lifetime of an electromechanical systems (EMS) device. In one aspect, a parameter of the device, such as a release or actuation voltage, is measured. The parameter measurement is used in conjunction with a model of the aging of the device according to the measured parameter to determine an estimated remaining lifetime of the device.Type: ApplicationFiled: November 15, 2011Publication date: May 16, 2013Applicant: QUALCOMM MEMS Technologies, Inc.Inventors: Yan Du, Kostadin D. Djordjev, Denis H. Endisch, Wilhelmus A. de Groot, Daniel Felnhofer
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Publication number: 20130100090Abstract: This disclosure provides systems, methods and apparatus for electromechanical systems variable capacitance devices. In one aspect, an electromechanical systems variable capacitance device includes a substrate with a first metal layer including a first bias electrode overlying the substrate. A member suspended above the first metal layer includes a dielectric beam and a second metal layer including a first radio frequency electrode and a ground electrode. The member and the first metal layer define a first air gap. A third metal layer over the member includes a second bias electrode, and the third metal layer and the member define a second air gap. The member includes a plane of symmetry substantially parallel a plane containing the first bias electrode.Type: ApplicationFiled: October 21, 2011Publication date: April 25, 2013Applicant: QUALCOMM MEMS TECHNOLOGIES, INC.Inventors: Daniel FELNHOFER, Wenyue ZHANG, Je-Hsuing LAN
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Publication number: 20130100065Abstract: This disclosure provides systems, methods and apparatus for electromechanical systems variable capacitance devices. In one aspect, an electromechanical systems variable capacitance device includes a substrate with a bottom bias electrode on the substrate. A first radio frequency electrode above the bottom bias electrode defines a first air gap. A non-planarized first dielectric layer is between the bottom bias electrode and the first radio frequency electrode. A metal layer above the first radio frequency electrode defines a second air gap. The metal layer includes a top bias electrode and a second radio frequency electrode.Type: ApplicationFiled: October 21, 2011Publication date: April 25, 2013Applicant: QUALCOMM MEMS TECHNOLOGIES, INC.Inventors: Daniel FELNHOFER, Wenyue ZHANG, Je-Hsuing LAN
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Publication number: 20120053872Abstract: A system and method for determining humidity based on determination of an offset voltage shift are disclosed. In one embodiment, a system for determining humidity comprises an electromechanical device comprising a first layer, a second layer, and a dielectric between the two layers, wherein the dielectric is spaced apart from at least one of the first and second layers in an unactuated state of the electromechanical device, and wherein the dielectric contacts both the first and second layers in an actuated state of the electromechanical device, a voltage source configured to apply, between the first and second layers, one or more voltages, and a processor configured to control the voltage source, to determine an offset voltage shift based on the applied voltages, and to determine information regarding humidity about the device based on the offset voltage shift.Type: ApplicationFiled: August 26, 2010Publication date: March 1, 2012Applicant: QUALCOMM MEMS TECHNOLOGIES, INC.Inventors: Daniel Felnhofer, Wihelmus A. de Groot
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Patent number: 7978395Abstract: A capacitive MEMS device is formed having a material between electrodes that traps and retains charges. The material can be realized in several configurations. It can be a multilayer dielectric stack with regions of different band gap energies or band energy levels. The dielectric materials can be trappy itself, i.e. when defects or trap sites are pre-fabricated in the material. Another configuration involves a thin layer of a conductive material with the energy level in the forbidden gap of the dielectric layer. The device may be programmed (i.e. offset and threshold voltages pre-set) by a method making advantageous use of charge storage in the material, wherein the interferometric modulator is pre-charged in such a way that the hysteresis curve shifts, and the actuation voltage threshold of the modulator is significantly lowered. During programming phase, charge transfer between the electrodes and the materials can be performed by applying voltage to the electrodes (i.e.Type: GrantFiled: May 27, 2010Date of Patent: July 12, 2011Assignee: Qualcomm MEMS Technologies, Inc.Inventors: Daniel Felnhofer, Evgeni Gousev
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Publication number: 20100238537Abstract: A capacitive MEMS device is formed having a material between electrodes that traps and retains charges. The material can be realized in several configurations. It can be a multilayer dielectric stack with regions of different band gap energies or band energy levels. The dielectric materials can be trappy itself, i.e. when defects or trap sites are pre-fabricated in the material. Another configuration involves a thin layer of a conductive material with the energy level in the forbidden gap of the dielectric layer. The device may be programmed (i.e. offset and threshold voltages pre-set) by a method making advantageous use of charge storage in the material, wherein the interferometric modulator is pre-charged in such a way that the hysteresis curve shifts, and the actuation voltage threshold of the modulator is significantly lowered. During programming phase, charge transfer between the electrodes and the materials can be performed by applying voltage to the electrodes (i.e.Type: ApplicationFiled: May 27, 2010Publication date: September 23, 2010Applicant: QUALCOMM MEMS Technologies, Inc.Inventors: Daniel Felnhofer, Evgeni Gousev
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Patent number: 7729036Abstract: A capacitive MEMS device is formed having a material between electrodes that traps and retains charges. The material can be realized in several configurations. It can be a multilayer dielectric stack with regions of different band gap energies or band energy levels. The dielectric materials can be trappy itself, i.e. when defects or trap sites are pre-fabricated in the material. Another configuration involves a thin layer of a conductive material with the energy level in the forbidden gap of the dielectric layer. The device may be programmed (i.e. offset and threshold voltages pre-set) by a method making advantageous use of charge storage in the material, wherein the interferometric modulator is pre-charged in such a way that the hysteresis curve shifts, and the actuation voltage threshold of the modulator is significantly lowered. During programming phase, charge transfer between the electrodes and the materials can be performed by applying voltage to the electrodes (i.e.Type: GrantFiled: November 12, 2007Date of Patent: June 1, 2010Assignee: QUALCOMM MEMS Technologies, Inc.Inventors: Daniel Felnhofer, Evgeni Gousev
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Publication number: 20090122384Abstract: A capacitive MEMS device is formed having a material between electrodes that traps and retains charges. The material can be realized in several configurations. It can be a multilayer dielectric stack with regions of different band gap energies or band energy levels. The dielectric materials can be trappy itself, i.e. when defects or trap sites are pre-fabricated in the material. Another configuration involves a thin layer of a conductive material with the energy level in the forbidden gap of the dielectric layer. The device may be programmed (i.e. offset and threshold voltages pre-set) by a method making advantageous use of charge storage in the material, wherein the interferometric modulator is pre-charged in such a way that the hysteresis curve shifts, and the actuation voltage threshold of the modulator is significantly lowered. During programming phase, charge transfer between the electrodes and the materials can be performed by applying voltage to the electrodes (i.e.Type: ApplicationFiled: November 12, 2007Publication date: May 14, 2009Applicant: QUALCOMM IncorporatedInventors: Daniel Felnhofer, Evgeni Gousev