Patents by Inventor Daniel Felnhofer

Daniel Felnhofer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20140210836
    Abstract: This disclosure provides systems, methods and apparatus for reducing image artifacts that arise when a display is exposed to sunlight over time. Various implementations disclosed herein can be implemented to prevent charge injection from inducing a negative offset voltage shift for display elements in the display. In one aspect, a buffer layer is applied to block electrons from being photoelectrically ejected from a movable reflective layer of a display element and into a stationary optical stack of the display element.
    Type: Application
    Filed: January 28, 2013
    Publication date: July 31, 2014
    Applicant: QUALCOMM MEMS TECHNOLOGIES, INC.
    Inventors: Fan Zhong, Guneet Sethi, Daniel Felnhofer, Thanh N. Tu
  • Publication number: 20140099992
    Abstract: A mobile device may include a sensor array. The sensor array may be a touch sensor array, such as a projected capacitive touch (PCT) sensor array. The mobile device may be configured to determine whether one or more sensor signals from the sensor array indicate an ear gesture and/or the presence of an ear. One or more device operations may be invoked according to the determination.
    Type: Application
    Filed: October 9, 2012
    Publication date: April 10, 2014
    Applicant: QUALCOMM MEMS TECHNOLOGIES, INC.
    Inventors: David William Burns, Daniel Felnhofer, Donald John Elloway
  • Publication number: 20130135620
    Abstract: This disclosure provides systems, methods and apparatus, including computer programs encoded on computer storage media, for testing an electromechanical systems (EMS) device. In one aspect, a laser is directed at a driven EMS device, and the reflected light pattern is analyzed to provide information regarding the characteristics of the driven EMS device. In some aspects, the reflected light pattern is analyzed to determine a resonant frequency of the EMS device or the damping forces acting on the EMS device. The resonant frequency can then be used to determine stresses within the EMS device, or pressure or temperature within a device package encapsulating the EMS device.
    Type: Application
    Filed: November 30, 2011
    Publication date: May 30, 2013
    Applicant: QUALCOMM MEMS Technologies, Inc.
    Inventors: Wilhelmus A. De Groot, Daniel Felnhofer
  • Publication number: 20130124116
    Abstract: This disclosure provides systems, methods and apparatus, including computer programs encoded on computer storage media, for estimating the lifetime or remaining lifetime of an electromechanical systems (EMS) device. In one aspect, a parameter of the device, such as a release or actuation voltage, is measured. The parameter measurement is used in conjunction with a model of the aging of the device according to the measured parameter to determine an estimated remaining lifetime of the device.
    Type: Application
    Filed: November 15, 2011
    Publication date: May 16, 2013
    Applicant: QUALCOMM MEMS Technologies, Inc.
    Inventors: Yan Du, Kostadin D. Djordjev, Denis H. Endisch, Wilhelmus A. de Groot, Daniel Felnhofer
  • Publication number: 20130100090
    Abstract: This disclosure provides systems, methods and apparatus for electromechanical systems variable capacitance devices. In one aspect, an electromechanical systems variable capacitance device includes a substrate with a first metal layer including a first bias electrode overlying the substrate. A member suspended above the first metal layer includes a dielectric beam and a second metal layer including a first radio frequency electrode and a ground electrode. The member and the first metal layer define a first air gap. A third metal layer over the member includes a second bias electrode, and the third metal layer and the member define a second air gap. The member includes a plane of symmetry substantially parallel a plane containing the first bias electrode.
    Type: Application
    Filed: October 21, 2011
    Publication date: April 25, 2013
    Applicant: QUALCOMM MEMS TECHNOLOGIES, INC.
    Inventors: Daniel FELNHOFER, Wenyue ZHANG, Je-Hsuing LAN
  • Publication number: 20130100065
    Abstract: This disclosure provides systems, methods and apparatus for electromechanical systems variable capacitance devices. In one aspect, an electromechanical systems variable capacitance device includes a substrate with a bottom bias electrode on the substrate. A first radio frequency electrode above the bottom bias electrode defines a first air gap. A non-planarized first dielectric layer is between the bottom bias electrode and the first radio frequency electrode. A metal layer above the first radio frequency electrode defines a second air gap. The metal layer includes a top bias electrode and a second radio frequency electrode.
    Type: Application
    Filed: October 21, 2011
    Publication date: April 25, 2013
    Applicant: QUALCOMM MEMS TECHNOLOGIES, INC.
    Inventors: Daniel FELNHOFER, Wenyue ZHANG, Je-Hsuing LAN
  • Publication number: 20120053872
    Abstract: A system and method for determining humidity based on determination of an offset voltage shift are disclosed. In one embodiment, a system for determining humidity comprises an electromechanical device comprising a first layer, a second layer, and a dielectric between the two layers, wherein the dielectric is spaced apart from at least one of the first and second layers in an unactuated state of the electromechanical device, and wherein the dielectric contacts both the first and second layers in an actuated state of the electromechanical device, a voltage source configured to apply, between the first and second layers, one or more voltages, and a processor configured to control the voltage source, to determine an offset voltage shift based on the applied voltages, and to determine information regarding humidity about the device based on the offset voltage shift.
    Type: Application
    Filed: August 26, 2010
    Publication date: March 1, 2012
    Applicant: QUALCOMM MEMS TECHNOLOGIES, INC.
    Inventors: Daniel Felnhofer, Wihelmus A. de Groot
  • Patent number: 7978395
    Abstract: A capacitive MEMS device is formed having a material between electrodes that traps and retains charges. The material can be realized in several configurations. It can be a multilayer dielectric stack with regions of different band gap energies or band energy levels. The dielectric materials can be trappy itself, i.e. when defects or trap sites are pre-fabricated in the material. Another configuration involves a thin layer of a conductive material with the energy level in the forbidden gap of the dielectric layer. The device may be programmed (i.e. offset and threshold voltages pre-set) by a method making advantageous use of charge storage in the material, wherein the interferometric modulator is pre-charged in such a way that the hysteresis curve shifts, and the actuation voltage threshold of the modulator is significantly lowered. During programming phase, charge transfer between the electrodes and the materials can be performed by applying voltage to the electrodes (i.e.
    Type: Grant
    Filed: May 27, 2010
    Date of Patent: July 12, 2011
    Assignee: Qualcomm MEMS Technologies, Inc.
    Inventors: Daniel Felnhofer, Evgeni Gousev
  • Publication number: 20100238537
    Abstract: A capacitive MEMS device is formed having a material between electrodes that traps and retains charges. The material can be realized in several configurations. It can be a multilayer dielectric stack with regions of different band gap energies or band energy levels. The dielectric materials can be trappy itself, i.e. when defects or trap sites are pre-fabricated in the material. Another configuration involves a thin layer of a conductive material with the energy level in the forbidden gap of the dielectric layer. The device may be programmed (i.e. offset and threshold voltages pre-set) by a method making advantageous use of charge storage in the material, wherein the interferometric modulator is pre-charged in such a way that the hysteresis curve shifts, and the actuation voltage threshold of the modulator is significantly lowered. During programming phase, charge transfer between the electrodes and the materials can be performed by applying voltage to the electrodes (i.e.
    Type: Application
    Filed: May 27, 2010
    Publication date: September 23, 2010
    Applicant: QUALCOMM MEMS Technologies, Inc.
    Inventors: Daniel Felnhofer, Evgeni Gousev
  • Patent number: 7729036
    Abstract: A capacitive MEMS device is formed having a material between electrodes that traps and retains charges. The material can be realized in several configurations. It can be a multilayer dielectric stack with regions of different band gap energies or band energy levels. The dielectric materials can be trappy itself, i.e. when defects or trap sites are pre-fabricated in the material. Another configuration involves a thin layer of a conductive material with the energy level in the forbidden gap of the dielectric layer. The device may be programmed (i.e. offset and threshold voltages pre-set) by a method making advantageous use of charge storage in the material, wherein the interferometric modulator is pre-charged in such a way that the hysteresis curve shifts, and the actuation voltage threshold of the modulator is significantly lowered. During programming phase, charge transfer between the electrodes and the materials can be performed by applying voltage to the electrodes (i.e.
    Type: Grant
    Filed: November 12, 2007
    Date of Patent: June 1, 2010
    Assignee: QUALCOMM MEMS Technologies, Inc.
    Inventors: Daniel Felnhofer, Evgeni Gousev
  • Publication number: 20090122384
    Abstract: A capacitive MEMS device is formed having a material between electrodes that traps and retains charges. The material can be realized in several configurations. It can be a multilayer dielectric stack with regions of different band gap energies or band energy levels. The dielectric materials can be trappy itself, i.e. when defects or trap sites are pre-fabricated in the material. Another configuration involves a thin layer of a conductive material with the energy level in the forbidden gap of the dielectric layer. The device may be programmed (i.e. offset and threshold voltages pre-set) by a method making advantageous use of charge storage in the material, wherein the interferometric modulator is pre-charged in such a way that the hysteresis curve shifts, and the actuation voltage threshold of the modulator is significantly lowered. During programming phase, charge transfer between the electrodes and the materials can be performed by applying voltage to the electrodes (i.e.
    Type: Application
    Filed: November 12, 2007
    Publication date: May 14, 2009
    Applicant: QUALCOMM Incorporated
    Inventors: Daniel Felnhofer, Evgeni Gousev