Patents by Inventor Daniel Fertig

Daniel Fertig has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190048962
    Abstract: Disclosed herein is an energy-absorbing component for absorbing energy of impacts thereon, where the energy-absorbing component can be plastically deformed by an impact and optionally can undergo at least some extent of destruction. The energy-absorbing component contains at least one core structure and at least one ancillary structure. The at least one core structure is manufactured from a first material which is a metal or is a polymer reinforced with continuous-filament fibers, and the at least one ancillary structure is manufactured from a second material which is an unreinforced polymer material or is a polymer material reinforced with short fibers or with long fibers. The at least one ancillary structure may include ribs and may be bonded to at least one core structure, so that the at least one ancillary structure supports the at least one core structure connected thereto. Processes for producing the energy-absorbing component are also disclosed.
    Type: Application
    Filed: February 9, 2017
    Publication date: February 14, 2019
    Applicant: BASF SE
    Inventors: Andreas WUEST, Levente JUHASZ, Sebastian EBLI, Sebastian ALLINGER, Daniel FERTIG, Henrik SCHMIDT
  • Patent number: 8944225
    Abstract: A structure for absorbing energy from impacts thereon, the structure being plastically deformable by an impact, with, if appropriate, the possibility that it is at least to some extent disrupted. The structure can include a) ribs for reinforcement, the ribs arranged with respect to one another at an angle with respect to the axial direction such that on failure of a rib a force acting on the structure is immediately absorbed axially by another rib, b) ribs running axially, the ribs being in essence corrugated or of zigzag shape, c) at least one rib running axially in a first plane and connected to at least two ribs running axially in a second plane rotated with respect to the first plane. The structure includes, in the direction of impact, at least two layers, each of which has different compressibility properties and different failure properties.
    Type: Grant
    Filed: August 7, 2009
    Date of Patent: February 3, 2015
    Assignee: BASF SE
    Inventors: Andreas Wuest, Stefan Glaser, Daniel Fertig, Torsten Hensel, Uwe Gleiter
  • Publication number: 20110193369
    Abstract: A structure for absorbing energy from impacts thereon, the structure being plastically deformable by an impact, with, if appropriate, the possibility that it is at least to some extent disrupted. The structure can include a) ribs for reinforcement, the ribs arranged with respect to one another at an angle with respect to the axial direction such that on failure of a rib a force acting on the structure is immediately absorbed axially by another rib, b) ribs running axially, the ribs being in essence corrugated or of zigzag shape, c) at least one rib running axially in a first plane and connected to at least two ribs running axially in a second plane rotated with respect to the first plane. The structure includes, in the direction of impact, at least two layers, each of which has different compressibility properties and different failure properties.
    Type: Application
    Filed: August 7, 2009
    Publication date: August 11, 2011
    Applicant: BASF SE
    Inventors: Andreas Wuest, Stefan Glaser, Daniel Fertig, Torsten Hensel, Uwe Gleiter
  • Publication number: 20060267146
    Abstract: An emitter window for a bipolar junction transistor includes a first emitter window layer adjacent to and in contact with a base region, a second emitter window layer adjacent to and in contact with the first layer and a third emitter window layer adjacent to and in contact with the second layer.
    Type: Application
    Filed: May 18, 2006
    Publication date: November 30, 2006
    Applicant: Polar Semiconductor, Inc.
    Inventors: Noel Hoilien, Kyeonglan Rho, Daniel Fertig, Steven Kosier
  • Publication number: 20060270165
    Abstract: A spacer for a lightly-doped drain MOSFET includes a first spacer layer adjacent to and in contact with a gate region and a lightly-doped region, a second spacer layer adjacent to and in contact with the first layer and a third spacer layer adjacent to and in contact with the second layer.
    Type: Application
    Filed: May 18, 2006
    Publication date: November 30, 2006
    Applicant: Polar Semiconductor, Inc.
    Inventors: Kyeonglan Rho, Noel Hoilien, Daniel Fertig, Steven Kosier