Abstract: A wiring harness for a battery and inverter system includes a main cable. It further includes an inverter connector configured to plug the main cable into an inverter module. It further includes a first spur of the main cable terminating in a first-type battery device connector. It further includes a second spur of the main cable terminating in a second type battery device connector.

Abstract: In various embodiments, an energy storage mounting system includes an inverter wall bracket mounted to a wall, wherein an inverter is coupled to the inverter wall bracket. The system includes a battery wall bracket to which a battery block is coupled. The battery wall bracket interfaces with an auxiliary bracket that is mounted to the wall, is vertically translatable relative to the auxiliary bracket, and is at least in part ground-supported. The battery block is electrically connected to the inverter.

Abstract: A method of fabricating an electronic device can include forming a plurality of vertical channels having sidewalls over a substrate, and forming gate dielectric regions over portions of the vertical channels and planar regions adjoining the vertical channels. Gate electrode regions are then formed over portions of the gate dielectric regions. The gate electrode material and the vertical channel region are doped and sized to enable full depletion of charges during operation. Source and body tie regions are formed on the vertical sidewalls by doping with a p-type or n-type dopant. Dielectric regions over the gate electrode regions are formed to electrically isolate the gate electrode regions from the source regions. A metallic layer is formed over the first side of the substrate having the vertical channels. Stress is then induced within the substrate by annealing and/or cooling to separate a semiconductor region of the substrate and the metallic layer from the remaining portion of the substrate.

Abstract: A method of fabricating an electronic device can include forming a plurality of vertical channels having sidewalls over a substrate, and forming gate dielectric regions over portions of the vertical channels and planar regions adjoining the vertical channels. Gate electrode regions are then formed over portions of the gate dielectric regions. The gate electrode material and the vertical channel region are doped and sized to enable full depletion of charges during operation. Source and body tie regions are formed on the vertical sidewalls by doping with a p-type or n-type dopant. Dielectric regions over the gate electrode regions are formed to electrically isolate the gate electrode regions from the source regions. A metallic layer is formed over the first side of the substrate having the vertical channels. Stress is then induced within the substrate by annealing and/or cooling to separate a semiconductor region of the substrate and the metallic layer from the remaining portion of the substrate.

Abstract: A method of fabricating an electronic device can include forming a plurality of vertical channels having sidewalls over a substrate, and forming gate dielectric regions over portions of the vertical channels and planar regions adjoining the vertical channels. Gate electrode regions are then formed over portions of the gate dielectric regions. The gate electrode material and the vertical channel region are doped and sized to enable full depletion of charges during operation. Source and body tie regions are formed on the vertical sidewalls by doping with a p-type or n-type dopant. Dielectric regions over the gate electrode regions are formed to electrically isolate the gate electrode regions from the source regions. A metallic layer is formed over the first side of the substrate having the vertical channels. Stress is then induced within the substrate by annealing and/or cooling to separate a semiconductor region of the substrate and the metallic layer from the remaining portion of the substrate.

Abstract: A method of fabricating an electronic device can include forming a plurality of vertical channels having sidewalls over a substrate, and forming gate dielectric regions over portions of the vertical channels and planar regions adjoining the vertical channels. Gate electrode regions are then formed over portions of the gate dielectric regions. The gate electrode material and the vertical channel region are doped and sized to enable full depletion of charges during operation. Source and body tie regions are formed on the vertical sidewalls by doping with a p-type or n-type dopant. Dielectric regions over the gate electrode regions are formed to electrically isolate the gate electrode regions from the source regions. A metallic layer is formed over the first side of the substrate having the vertical channels. Stress is then induced within the substrate by annealing and/or cooling to separate a semiconductor region of the substrate and the metallic layer from the remaining portion of the substrate.

Abstract: The present disclosure provides methods, uses, and kits for treating cancer in an individual. The methods comprise administering to the individual a PD-1 axis binding antagonist (such as an anti-PD-1 or anti-PD-L1 antibody) and an RNA vaccine (e.g., a personalized cancer vaccine that comprises one or more polynucleotides encoding one or more neoepitopes resulting from cancer-specific somatic mutations present in a tumor specimen obtained from the individual). Further provided herein are RNA molecules (e.g., a personalized RNA cancer vaccine that comprises one or more polynucleotides encoding one or more neoepitopes resulting from cancer-specific somatic mutations present in a tumor specimen obtained from the individual), as well as DNA molecules and methods useful for production or use of RNA vaccines.

Abstract: Methods and devices for forming droplets are provided. In certain embodiments, the methods and devices form droplets having different diameters. In particular embodiments, the device includes a fluid supply channel, a collection chamber, and one or more nozzles disposed between the fluid supply channel and the collection chamber. Each nozzle may include an inlet portion with a channel height, a first step with a first step height and a first tread length, and a second step with a second step height and a second tread length. In certain embodiments, the first step height is greater than the channel height, and the second step height is greater than the first step height.

Abstract: A nanochannel delivery device and method of manufacturing and use. The nanochannel delivery device comprises an inlet, an outlet, electrodes and a nanochannel. The nanochannel may be oriented parallel to the primary plane of the nanochannel delivery device. The inlet and outlet may be in direct fluid communication with the nanochannel.

Abstract: Methods and devices for forming droplets are provided. In certain embodiments, the methods and devices form droplets having different diameters.

Abstract: Methods and devices for forming droplets are provided. In certain embodiments, the methods and devices form droplets having different diameters.

Abstract: A nanochannel delivery device and method of manufacturing and use. The nanochannel delivery device comprises an inlet, an outlet, and a nanochannel. The nanochannel may be oriented parallel to the primary plane of the nanochannel delivery device. The inlet and outlet may be in direct fluid communication with the nanochannel.

Abstract: Methods and devices for forming droplets are provided. In certain embodiments, the methods and devices form droplets having different diameters.

Abstract: The present invention is directed to methods to detect and diagnose osteoporosis and periodontal disease using salivary biomarkers.

Abstract: A nanochannel delivery device and method of manufacturing and use. The nanochannel delivery device comprises an inlet, an outlet, electrodes and a nanochannel. The nanochannel may be oriented parallel to the primary plane of the nanochannel delivery device. The inlet and outlet may be in direct fluid communication with the nanochannel.

Abstract: A nanochannel delivery device and method of manufacturing and use. The nanochannel delivery device comprises an inlet, an outlet, and a nanochannel. The nanochannel may be oriented parallel to the primary plane of the nanochannel delivery device. The inlet and outlet may be in direct fluid communication with the nanochannel.

Abstract: The present invention relates generally to dental diseases, caries and periodontal disease. More specifically, the invention relates to Lactoferrin and Statherin fusion proteins (STAT-LF) along with therapeutic, diagnostic and research uses for these polypeptides. The present invention also provides methods of treating dental diseases, caries and periodontal disease.

Abstract: A nanochannel delivery device and method of manufacturing and use. The nanochannel delivery device comprises an inlet, an outlet, and a nanochannel. The nanochannel may be oriented parallel to the primary plane of the nanochannel delivery device. The inlet and outlet may be in direct fluid communication with the nanochannel.

Abstract: The present invention relates generally to dental diseases, caries and periodontal disease. More specifically, the invention relates to Lactoferrin and Statherin fusion proteins (STAT-LF) along with therapeutic, diagnostic and research uses for these polypeptides. The present invention also provides methods of treating dental diseases, caries and periodontal disease.

Abstract: The present invention relates generally to dental diseases, caries and periodontal disease. More specifically, the invention relates to Lactoferrin and Statherin fusion proteins (STAT-LF) along with therapeutic, diagnostic and research uses for these polypeptides. The present invention also provides methods of treating dental diseases, caries and periodontal disease.