Abstract: Aspects of wireless communication are described, including a radiofrequency (RF) amplifier chip, configured for transmitting or receiving data, comprising a first substrate comprising a first material and a second substrate comprising a second material that is different from the first material. The first substrate and the second substrate may be lattice-matched such that an interface region between the first substrate and the second substrate exhibits an sp3 carbon peak at about 1332 cm·1 having a full width half maximum of no more than 5.0 cm·1 as measured by Raman spectroscopy. In some aspects, the first substrate and said second substrate permit said chip to transmit or receive data at a transfer rate of at least 500 megabits per second and a frequency of at least 8 GHz. In some aspects, the RF amplifier chip is part of a satellite transmitter.

Abstract: Aspects of diamond growth on semiconductors are described. Some aspects include deposition of a layer of diamond seeds on a semiconductor-containing layered structure. Some aspects include the deposition of an intermediate layer over the layer of diamond seeds. In some aspects, the intermediate layer is an immobilizing layer to immobilize the diamond seeds. Some aspects include generating synthetic diamond over a surface of a semiconductor-containing layered structure. In some aspects, synthetic diamond is generated over a surface comprising diamond seeds and an intermediate layer. In some aspects, semiconductor-containing layered structure is etched with diamond seeds in place over a surface of the semiconductor-containing layered structure.

Abstract: Aspects of features in thermally conductive substrates and methods of forming the same are described. A substrate may comprise a material having an average value of thermal conductivity equal to or greater than about 1,000 W/mK. The substrate may comprise diamond. The substrate may comprise a wide-bandgap semiconductor material. A feature may comprise an interconnect, such as a via hole. A feature may comprise a singulation feature, such as a die street. The substrate may comprise a plurality of crystals each having an average crystal grain diameter from about 10 nanometers to about 100 nanometers. The plurality of crystals may be disposed a distance of less than or equal to about 100 micrometers from a surface of the feature. The substrate may comprise a keyhole or void. The keyhole may be disposed a distance of less than or equal to about 100 micrometers from a surface of the feature.

Abstract: The present disclosure provides methods and systems of generating high-efficiency structures for improved wireless communications. Such structures may comprise hard and chemically inert materials. Such structures may include materials having average thermal conductivities equal to or greater than about 1,000 W/mK. Such structures may comprise diamond. Such structures may comprise materials whose properties may be affected through processing such structures. Such structures may comprise devices with improved electron mobilities and efficiencies. Such structures may comprise substrate features. Such features may be configured to communicatively couple to a device or a component of a substrate. A device may comprise a radio transmitter. Some examples include satellite transmitters.

Abstract: Aspects of wireless communication are described, including a radiofrequency (RF) amplifier chip, configured for transmitting or receiving data, comprising a first substrate comprising a first material and a second substrate comprising a second material that is different from the first material. The first substrate and the second substrate may be lattice-matched such that an interface region between the first substrate and the second substrate exhibits an sp3 carbon peak at about 1332 cm·1 having a full width half maximum of no more than 5.0 cm·1 as measured by Raman spectroscopy. In some aspects, the first substrate and said second substrate permit said chip to transmit or receive data at a transfer rate of at least 500 megabits per second and a frequency of at least 8 GHz. In some aspects, the RF amplifier chip is part of a satellite transmitter.

Abstract: The present invention discloses a semiconductor-on-diamond-on-carrier substrate wafer. The semiconductor-on-diamond-on-carrier wafer comprises: a semiconductor-on-diamond wafer having a diamond side and semiconductor side; a carrier substrate disposed on the diamond side of the semiconductor-on-diamond wafer and including at least one layer having a lower coefficient of thermal expansion (CTE) than diamond; and an adhesive layer disposed between the diamond side of the semiconductor-on-diamond wafer and the carrier substrate to bond the carrier substrate to the semiconductor-on-diamond wafer. The semiconductor-on-diamond-on-carrier substrate wafer has the following characteristics: a total thickness variation of no more than 40 ?m; a wafer bow of no more than 100 ?m; and a wafer warp of no more than 40 ?m.

Abstract: Aspects of diamond growth on semiconductors are described. Some aspects include direct growth of synthetic diamond on wide-bandgap semiconductors without the use of nucleating layers or protective layers. Some aspects include generating synthetic diamond over a gallium nitride surface of a layered structure in accordance with a set of growth parameters that are generated based at least in part on an interface property of an interface generated between the gallium nitride surface and the synthetic diamond. In some aspects, the interface is a single interface between the synthetic diamond and the gallium nitride surface. In some aspects, the synthetic diamond is in contact with the gallium nitride surface. Some aspects include synthetic diamond growth on wide-bandgap semiconductor structures to achieve thermal extraction without introducing electrically conductive regions in the semiconductor structure. Such aspects may include generating less than optimal quality synthetic diamond.

Abstract: A tissue interface module has an applicator chamber on a proximal side of the tissue interface module and a tissue acquisition chamber on a distal side of the tissue interface module. The applicator chamber may include: an opening adapted to receive the applicator; an attachment mechanism positioned in the applicator chamber and adapted to attach the tissue interface module to the applicator; a sealing member positioned at a proximal side of the applicator chamber; and a vacuum interface positioned at a proximal side of the applicator chamber and adapted to receive a vacuum inlet positioned on a distal end of the applicator. The invention also includes corresponding methods.

Abstract: Apparatuses, computer readable medium, and methods are disclosed for dynamic sampling based on talent pool size. The method of dynamic sampling based on talent pool size may include determining, by at least one hardware processor, a talent pool based on a query from a user, where the talent pool comprises members and the members comprise attributes. The method further includes determining based on a size of the talent pool a sampling size number, where the attributes are represented by probability distribution functions. The method may further include determining an aggregate distribution of the attributes by combining the sampling size number of samples from each of the attributes and determining a range of a value of the aggregate distribution of the attributes. The method may further include causing the range of the value of the aggregate distribution of the attributes to be displayed to the user.

Abstract: Aspects of wireless communication are described, including a radiofrequency (RF) amplifier chip, configured for transmitting or receiving data, comprising a first substrate comprising a first material and a second substrate comprising a second material that is different from the first material. The first substrate and the second substrate may be lattice-matched such that an interface region between the first substrate and the second substrate exhibits an sp3 carbon peak at about 1332 cm·1 having a full width half maximum of no more than 5.0 cm·1 as measured by Raman spectroscopy. In some aspects, the first substrate and said second substrate permit said chip to transmit or receive data at a transfer rate of at least 500 megabits per second and a frequency of at least 8 GHz. In some aspects, the RF amplifier chip is part of a satellite transmitter.

Abstract: Aspects of wireless communication are described, including a radiofrequency (RF) amplifier chip, configured for transmitting or receiving data, comprising a first substrate comprising a first material and a second substrate comprising a second material that is different from the first material. The first substrate and the second substrate may be lattice-matched such that an interface region between the first substrate and the second substrate exhibits an sp3 carbon peak at about 1332 cm?1 having a full width half maximum of no more than 5.0 cm?1 as measured by Raman spectroscopy. In some aspects, the first substrate and said second substrate permit said chip to transmit or receive data at a transfer rate of at least 500 megabits per second and a frequency of at least 8 GHz. In some aspects, the RF amplifier chip is part of a satellite transmitter.

Abstract: Aspects of wireless communication are described, including a radiofrequency (RF) amplifier chip, configured for transmitting or receiving data, comprising a first substrate comprising a first material and a second substrate comprising a second material that is different from the first material. The first substrate and the second substrate may be lattice-matched such that an interface region between the first substrate and the second substrate exhibits an sp3 carbon peak at about 1332 cm?1 having a full width half maximum of no more than 5.0 cm?1 as measured by Raman spectroscopy. In some aspects, the first substrate and said second substrate permit said chip to transmit or receive data at a transfer rate of at least 500 megabits per second and a frequency of at least 8 GHz. In some aspects, the RF amplifier chip is part of a satellite transmitter.

Abstract: Systems and methods for delivering microwave energy to skin are provided, such that a focal zone of destructive heat is generated in the upper sub-dermis, mid-dermis, and/or lower dermis. This microwave therapy may be used for hair removal, treatment of acne, skin tightening, treatment of toe nail fungus, or sweat reduction. According to one embodiment, a system can include a microwave applicator having a distal treatment portion that includes at least one microwave antenna, a cooling system, and vacuum features. In some embodiments, the interaction between incident waves transmitted from the microwave applicator and reflected waves may be used to generate a standing wave with a peak energy density in selected regions of the dermis.

Abstract: The present invention discloses a semiconductor-on-diamond-on-carrier substrate wafer. The semiconductor-on-diamond-on-carrier wafer comprises: a semiconductor-on-diamond wafer having a diamond side and semiconductor side; a carrier substrate disposed on the diamond side of the semiconductor-on-diamond wafer and including at least one layer having a lower coefficient of thermal expansion (CTE) than diamond; and an adhesive layer disposed between the diamond side of the semiconductor-on-diamond wafer and the carrier substrate to bond the carrier substrate to the semiconductor-on-diamond wafer. The semiconductor-on-diamond-on-carrier substrate wafer has the following characteristics: a total thickness variation of no more than 40 ?m; a wafer bow of no more than 100 ?m; and a wafer warp of no more than 40 ?m.

Abstract: A method of fabricating a semiconductor device structure includes: providing a substrate comprising a layer of compound semiconductor material; forming a seed layer of nano-crystalline diamond having a layer thickness in a range 5 to 50 nm on the layer of compound semiconductor material; and growing a layer of polycrystalline CVD diamond on the seed layer using a chemical vapour deposition (CVD) technique. An effective thermal boundary resistance (TBReff) at an interface between the layer of compound semiconductor material and the layer of polycrystalline CVD diamond material is no more than 50 m2K/GW.

Abstract: Apparatuses, computer readable medium, and methods are disclosed for dynamic sampling based on talent pool size. The method of dynamic sampling based on talent pool size may include determining, by at least one hardware processor, a talent pool based on a query from a user, where the talent pool comprises members and the members comprise attributes. The method further includes determining based on a size of the talent pool a sampling size number, where the attributes are represented by probability distribution functions. The method may further include determining an aggregate distribution of the attributes by combining the sampling size number of samples from each of the attributes and determining a range of a value of the aggregate distribution of the attributes. The method may further include causing the range of the value of the aggregate distribution of the attributes to be displayed to the user.

Abstract: Systems, methods and devices for creating an effect using microwave energy to specified tissue are disclosed herein. A system for the application of microwave energy to a tissue can include, in some embodiments, a signal generator adapted to generate a microwave signal having predetermined characteristics, an applicator connected to the generator and adapted to apply microwave energy to tissue, the applicator comprising one or more microwave antennas and a tissue interface, a vacuum source connected to the tissue interface, a cooling source connected to said tissue interface, and a controller adapted to control the signal generator, the vacuum source, and the coolant source. The tissue may include a first layer and a second layer, the second layer below the first layer, and the controller is configured such that the system delivers energy such that a peak power loss density profile is created in the second layer.

Abstract: A tissue interface module has an applicator chamber on a proximal side of the tissue interface module and a tissue acquisition chamber on a distal side of the tissue interface module. The applicator chamber may include: an opening adapted to receive the applicator; an attachment mechanism positioned in the applicator chamber and adapted to attach the tissue interface module to the applicator; a sealing member positioned at a proximal side of the applicator chamber; and a vacuum interface positioned at a proximal side of the applicator chamber and adapted to receive a vacuum inlet positioned on a distal end of the applicator. The invention also includes corresponding methods.

Abstract: Techniques are provided for dynamically generating content. A request for content about a first entity is received from a client device. In response to receiving the request, an identity of a second entity of the client device is determined. Based on the identity, attributes of the second entity are identified. It is determined whether the attributes satisfy targeting criteria of a campaign that was initiated by the first entity. In response to determining that the attributes satisfy the targeting criteria, a first number of entities that (i) share one or more attributes in common with the second entity and (ii) satisfy the targeting criteria is determined. Also, a second number of entities that share the one or more attributes in common with the second entity is determined. A ratio is calculated based on the two numbers. First content that specifies the ratio is sent to the client device for display.

Abstract: Methods for mounting and dismounting thin and/or bowed semiconductor-on-diamond wafers to a carrier are disclosed that flatten said wafers and provide mechanical support to enable efficient semiconductor device processing on said semiconductor-on-diamond wafers.