Abstract: Methods, computer program products, and/or systems are provided that perform the following operations: determining a pacing requirement for host requests based on one or more thresholds; setting a pacing delay level based on the one or more thresholds in response to the determination of the pacing requirement; and implementing a memory request flow for a host request based on the pacing requirement and the pacing delay level.

Abstract: Embodiments include methods, systems and computer program products for managing a flash memory device. Aspects include monitoring a percentage of memory of the flash memory device that is in a ready to use state. Aspects also include operating the flash memory device in a first operating mode based on a determination that the percentage is greater than a first threshold value. Aspects further include operating the flash memory device in a second operating mode based on a determination that the percentage has fallen below the first threshold value. Aspects include operating the flash memory device in a third operating mode until the percentage exceeds the first threshold value based on a determination that the percentage has fallen below a second threshold value, which is lower than the first threshold value. The erasing of ready to erase memory block stripes is only performed during the third operating mode.

Abstract: A memory system and method for storing data in one or more storage chips includes: one or more memory cards each having a plurality of storage chips, and each chip having a plurality of dies having a plurality of memory cells; a memory controller comprising a translation module, the translation module further comprising: a logical to virtual translation table (LVT) having a plurality of entries, each entry in the LVT configured to map a logical address to a virtual block address (VBA), where the VBA corresponds to a group of the memory cells on the one or more memory cards, wherein each entry in the LVT further includes a write wear level count to track the number of writing operations to the VBA, and a read wear level count to track the number of read operations for the VBA mapped to that LVT entry.

Abstract: Methods, computer program products, and/or systems are provided that perform the following operations: determining a pacing requirement for host requests based on one or more thresholds; setting a pacing delay level based on the one or more thresholds in response to the determination of the pacing requirement; and implementing a memory request flow for a host request based on the pacing requirement and the pacing delay level.

Abstract: Embodiments include methods, systems and computer program products for managing a flash memory device. Aspects include monitoring a percentage of memory of the flash memory device that is in a ready to use state. Aspects also include operating the flash memory device in a first operating mode based on a determination that the percentage is greater than a first threshold value. Aspects further include operating the flash memory device in a second operating mode based on a determination that the percentage has fallen below the first threshold value. Aspects include operating the flash memory device in a third operating mode until the percentage exceeds the first threshold value based on a determination that the percentage has fallen below a second threshold value, which is lower than the first threshold value. The erasing of ready to erase memory block stripes is only performed during the third operating mode.

Abstract: A method and system of managing memory, the method including receiving a request for storage space in the memory system; obtaining a timestamp for a new Logical Unit Number (LUN); allocating a range of logical blocks to the new LUN in accordance with its requested size, the range of logical blocks including a starting logical block and a number of blocks; assigning the timestamp to the new LUN as the LUN creation timestamp; and saving the LUN creation timestamp with other metadata identifying the new LUN and the allocated logical blocks. Methods and system for deleting LUNs and using a deletion timestamp are disclosed as is a process to format a LUN.

Abstract: In an approach to NV SCM data flow with mismatched block sizes, responsive to receiving a command from a host on a memory controller for a storage class memory, whether the command is a write command is determined. Responsive to determining that the command is the write command, the command is inserted into a first buffer. Responsive to the command exiting the first buffer, whether the command generates a cache hit from the internal cache is determined. Responsive to determining that the command generates the cache hit, the write data is written into the internal cache. Responsive to determining that the command does not generate the cache hit, whether an oldest page in the internal cache is dirty is determined. Responsive to determining that the oldest page in the internal cache is dirty, a modified oldest page is written to the internal cache and a second buffer.

Abstract: A method and system of managing memory, the method including receiving a request for storage space in the memory system; obtaining a timestamp for a new Logical Unit Number (LUN); allocating a range of logical blocks to the new LUN in accordance with its requested size, the range of logical blocks including a starting logical block and a number of blocks; assigning the timestamp to the new LUN as the LUN creation timestamp; and saving the LUN creation timestamp with other metadata identifying the new LUN and the allocated logical blocks. Methods and system for deleting LUNs and using a deletion timestamp are disclosed as is a process to format a LUN.

Abstract: A method and system for collecting diagnostic data from a storage class memory chip is disclosed. The method includes performing a scrub process on at least a portion of the storage class memory by: removing the portion of the storage class memory from use, wherein the portion comprises a plurality of memory locations, executing a first write operation to write a first pattern on each of the plurality of memory locations, executing a first read operation to obtain a first set of data written on each of the plurality of memory locations, analyzing the first set of data written on each of the plurality of memory locations to determine the number of stuck-at faults in the portion, and updating one or more counters in an error rate table (ERT) to indicate the number of stuck-at faults.

Abstract: A memory system and method for storing data in one or more storage chips includes: one or more memory cards each having a plurality of storage chips, and each chip having a plurality of dies having a plurality of memory cells; a memory controller comprising a translation module, the translation module further comprising: a logical to virtual translation table (LVT) having a plurality of entries, each entry in the LVT configured to map a logical address to a virtual block address (VBA), where the VBA corresponds to a group of the memory cells on the one or more memory cards, wherein each entry in the LVT further includes a write wear level count to track the number of writing operations to the VBA, and a read wear level count to track the number of read operations for the VBA mapped to that LVT entry.

Abstract: A memory system and method for storing data in one or more storage chips is disclosed. The memory system includes one or more storage dies included in each storage chip and a controller. Each of the plurality of storage dies further comprises one or more media replacement unit (MRU) groups. The controller includes a translation module, the translation module further comprising: a chip select table (CST) configured to identify one or more valid storage chips during translation for performing a read/write operation, and a media repair table (MRT) corresponding to each of storage chips, each MRT configured to identify one or more storage dies during translation for performing a read/write operation.

Abstract: A memory system and method for storing data in one or more storage chips includes: one or more memory cards each having a plurality of storage chips, and each chip having a plurality of dies having a plurality of memory cells; a memory controller comprising a translation module, the translation module further comprising: a logical to virtual translation table (LVT) having a plurality of entries, each entry in the LVT configured to map a logical address to a virtual block address (VBA), where the VBA corresponds to a group of the memory cells on the one or more memory cards, wherein each entry in the LVT further includes a write wear level count to track the number of writing operations to the VBA, and a read wear level count to track the number of read operations for the VBA mapped to that LVT entry.

Abstract: A method and system for collecting diagnostic data from a storage class memory chip is disclosed. The method includes performing a scrub process on at least a portion of the storage class memory by: removing the portion of the storage class memory from use, wherein the portion comprises a plurality of memory locations, executing a first write operation to write a first pattern on each of the plurality of memory locations, executing a first read operation to obtain a first set of data written on each of the plurality of memory locations, analyzing the first set of data written on each of the plurality of memory locations to determine the number of stuck-at faults in the portion, and updating one or more counters in an error rate table (ERT) to indicate the number of stuck-at faults.

Abstract: A memory system and method for storing data in one or more storage chips is disclosed. The memory system includes one or more storage dies included in each storage chip and a controller. Each of the plurality of storage dies further comprises one or more media replacement unit (MRU) groups. The controller includes a translation module, the translation module further comprising: a chip select table (CST) configured to identify one or more valid storage chips during translation for performing a read/write operation, and a media repair table (MRT) corresponding to each of storage chips, each MRT configured to identify one or more storage dies during translation for performing a read/write operation.

Abstract: A controller configures a plurality of solid state disks as a redundant array of independent disks (RAID), wherein the plurality of solid state disks store a plurality of blocks, and wherein storage areas of the plurality of solid state disks corresponding to at least some blocks of the plurality of blocks have different amounts of estimated life expectancies. The controller includes in data structures associated with a block that is to be stored in the storage areas of the plurality of solid state disks an indication that the block includes parity information corresponding to the RAID, wherein parity information comprises information corresponding to an error correction mechanism to protect against a disk failure.

Abstract: A controller configures a plurality of solid state disks as a redundant array of independent disks (RAID), wherein the plurality of solid state disks store a plurality of blocks, and wherein storage areas of the plurality of solid state disks corresponding to at least some blocks of the plurality of blocks have different amounts of estimated life expectancies. The controller includes in data structures associated with a block that is to be stored in the storage areas of the plurality of solid state disks an indication that the block includes parity information corresponding to the RAID, wherein parity information comprises information corresponding to an error correction mechanism to protect against a disk failure.

Abstract: A controller configures a plurality of solid state disks as a redundant array of independent disks (RAID), wherein the plurality of solid state disks store a plurality of blocks, and wherein storage areas of the plurality of solid state disks corresponding to at least some blocks of the plurality of blocks have different amounts of estimated life expectancies. The controller includes in data structures associated with a block that is to be stored in the storage areas of the plurality of solid state disks an indication that the block includes parity information corresponding to the RAID, wherein parity information comprises information corresponding to an error correction mechanism to protect against a disk failure.

Abstract: A controller configures a plurality of solid state disks as a redundant array of independent disks (RAID), wherein the plurality of solid state disks store a plurality of blocks, and wherein storage areas of the plurality of solid state disks corresponding to at least some blocks of the plurality of blocks have different amounts of estimated life expectancies. The controller includes in data structures associated with a block that is to be stored in the storage areas of the plurality of solid state disks an indication that the block includes parity information corresponding to the RAID, wherein parity information comprises information corresponding to an error correction mechanism to protect against a disk failure.

Abstract: A method and apparatus are provided for implementing enhanced vertical ECC storage in a dynamic random access memory. A dynamic random access memory (DRAM) is split into a plurality of groups. Each group resides inside a DRAM row address strobe (RAS) page so that multiple locations inside a group can be accessed without incurring an additional RAS access penalty. Each group is logically split into a plurality of segments for storing data with at least one segment for storing ECC for the data segments. For a write operation, data are written in a data segment and then ECC for the data are written in an ECC segment. For a read operation, ECC are read from an ECC segment, then data are read from the data segment.

Abstract: A method and calibration apparatus implement calibration of sampling of a data strobe signal (DQS) during synchronous dynamic random access memory (DRAM) reads. A calibration control is provided to enable calibration testing. A selected one of a received DQS signal and an internal Enable signal is driven onto a data mask (DQM) IO during a DRAM read for calibration testing. The received DQS signal and the internal Enable signal are used to adjust the Enable delay to generally center the preamble time at the DQS receiver.