Abstract: A time-to-digital converter circuit is disclosed, the time-to-digital converter circuit including a plurality of delay stages connected to form a delay line, a plurality of event counters, an encoder circuit for triggering the delay line, and a binning circuit for associating an event with an event counter from plurality of event counters. The binning circuit selects the event counter based on a signal from the delay line, and wherein the encoder circuit is configured to sequentially trigger a different delay stage of the plurality of delay stages. Also disclosed is a time-of-flight sensor implementing the time-to-digital converter circuit, and an associated apparatus and method.

Abstract: The present disclosure describes a method and apparatus for enabling an imaging sensor to perform Time-of-Flight measurements while requiring less histogram memory and in many cases less power consumption. A light source is operated to cause multiple light emissions and a coarse/estimated distance is determined based on a first echo received based on the first light emission. A histogram is saved and a fine distance is calculated from the coarse distance and data derived from the echo of a second light emission.

Abstract: A time-to-digital converter circuit is disclosed, the time-to-digital converter circuit including a plurality of delay stages connected to form a delay line, a plurality of event counters, an encoder circuit for triggering the delay line, and a binning circuit for associating an event with an event counter from plurality of event counters. The binning circuit selects the event counter based on a signal from the delay line, and wherein the encoder circuit is configured to sequentially trigger a different delay stage of the plurality of delay stages. Also disclosed is a time-of-flight sensor implementing the time-to-digital converter circuit, and an associated apparatus and method.

Abstract: A sensing system is disclosed for performing distance measurements. The sensing system may include an emitter configured to emit electromagnetic radiation modulated at a known frequency. The sensing system may further include a detector configured to sample incident electromagnetic radiation at the known frequency, convert the sampled electromagnetic radiation into charge carriers, and collect the charge carriers in a storage component to produce an electronic signal. The sensing system may include a processor configured to determine a correction by applying a non-linear polynomial function to the electronic signal.

Abstract: The present disclosure describes a method and apparatus for enabling an imaging sensor to perform Time-of-Flight measurements while requiring less histogram memory and in many cases less power consumption. A light source is operated to cause multiple light emissions and a coarse/estimated distance is determined based on a first echo received based on the first light emission. A histogram is saved and a fine distance is calculated from the coarse distance and data derived from the echo of a second light emission.

Abstract: An optoelectronic module operable to acquire distance data and spectral data includes an array of demodulation pixels and an array of spectral filters. The demodulation pixels can possess an intrinsic wavelength-dependent sensitivity, wherein the intrinsic wavelength-dependent sensitivity can be offset by an intensity balancing micro-lens array in some cases. In some cases, the intrinsic wavelength-dependent sensitivity can be offset by a combined filter array, while in other cases the intrinsic wavelength-dependent sensitivity can be offset by an intensity balancing filter array. Still in other cases, the demodulation pixels can be operable in such as to offset the intrinsic wavelength-dependent sensitivity.

Abstract: An imaging device, including a monolithic semiconductor integrated circuit substrate, comprises a focal plane array of pixel cells. Each one of the pixel cells includes a gate overlying a region of the substrate operable to convert incident radiation into charge carriers. The pixel also includes a CMOS readout circuit including at least one output transistor in the substrate. The pixel further includes a charge coupled device section on the substrate adjacent the gate, the charge coupled device section including a sense node to receive charge carriers transferred from the region of the substrate beneath the gate. The sense node is coupled to the output transistor. The pixel also includes a reset switch coupled to the sense node. The pixel's charge coupled device section has a buried channel region. The pixel also includes one or more bias enabling switches operable to enable a bias voltage to be applied to the gate.

Abstract: The present disclosure describes quantum dot film based demodulation structures and optical ranging systems including an array of QDF demodulation structures.

Abstract: An optoelectronic module operable to acquire distance data and spectral data includes an array of demodulation pixels and an array of spectral filters. The demodulation pixels can possess an intrinsic wavelength-dependent sensitivity, wherein the intrinsic wavelength-dependent sensitivity can be offset by an intensity balancing micro-lens array in some cases. In some cases, the intrinsic wavelength-dependent sensitivity can be offset by a combined filter array, while in other cases the intrinsic wavelength-dependent sensitivity can be offset by an intensity balancing filter array. Still in other cases, the demodulation pixels can be operable in such as to offset the intrinsic wavelength-dependent sensitivity.

Abstract: An imaging device, including a monolithic semiconductor integrated circuit substrate, comprises a focal plane array of pixel cells. Each one of the pixel cells includes a gate overlying a region of the substrate operable to convert incident radiation into charge carriers. The pixel also includes a CMOS readout circuit including at least one output transistor in the substrate. The pixel further includes a charge coupled device section on the substrate adjacent the gate, the charge coupled device section including a sense node to receive charge carriers transferred from the region of the substrate beneath the gate. The sense node is coupled to the output transistor. The pixel also includes a reset switch coupled to the sense node. The pixel's charge coupled device section has a buried channel region. The pixel also includes one or more bias enabling switches operable to enable a bias voltage to be applied to the gate.

Abstract: The present disclosure describes quantum dot film based demodulation structures and optical ranging systems including an array of QDF demodulation structures.

Abstract: A flush-mounted switch, in particular a door-opener switch, for mounting on a fastening surface, has a tubular housing and a flange which protrudes over the cover and an axially moveable button for actuating a switching member connected to the housing. The button is held in its rest position by a restoring force and can be pushed in counter to the action of this restoring force. A fastening ring affixes the door-opener switch on the fastening surface. The flange of the housing covers the fastening ring. A support ring is provided by way of which the button is lockable to the fastening ring.

Abstract: A flush-mounted switch, in particular a door-opener switch, for mounting on a fastening surface, has a tubular housing and a flange which protrudes over the cover and an axially moveable button for actuating a switching member connected to the housing. The button is held in its rest position by a restoring force and can be pushed in counter to the action of this restoring force. A fastening ring affixes the door-opener switch on the fastening surface. The flange of the housing covers the fastening ring. A support ring is provided by way of which the button is lockable to the fastening ring.