Patents by Inventor Daniel Gäbler
Daniel Gäbler has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11646389Abstract: A light sensitive semiconductor structure including a pn-junction in a silicon substrate. The pn-junction includes a central part and an edge part around surrounding the central part, the edge part being in contact with a surface of the silicon substrate. The structure further includes a plasma shielding structure covering at least a depletion width of the pn-junction over at least a part of the edge part where the edge part contacts the surface of the silicon substrate.Type: GrantFiled: November 10, 2021Date of Patent: May 9, 2023Assignee: X-FAB Global Services GmbHInventor: Daniel Gäbler
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Patent number: 11605742Abstract: A dark reference device comprises: a photodiode comprising an optical active area; a light shield configured to prevent light from entering said optical active area, wherein said light shield comprises first and second overlapping metal covers, and wherein each of said metal covers comprises a plurality of openings overlapping said optical active area.Type: GrantFiled: June 17, 2021Date of Patent: March 14, 2023Assignee: X-FAB Global Services GmbHInventors: Daniel Gäbler, Pablo Siles
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Patent number: 11575061Abstract: A single photon avalanche diode (SPAD) device comprises: a silicon layer; an active region in said silicon layer for detecting incident light; and a blocking structure overlapping said active region for blocking incident light having a wavelength at least in the range of 200 nm to 400 nm, so that light having said wavelength can only be detected by said SPAD device when incident upon a region of said silicon layer outside of said active region.Type: GrantFiled: June 24, 2020Date of Patent: February 7, 2023Assignee: X-FAB SEMICONDUCTOR FOUNDRIES GMBHInventors: Daniel Gäbler, Hannes Schmidt, Pablo Siles, Matthias Krojer, Alexander Zimmer
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Publication number: 20220359780Abstract: A light sensitive semiconductor structure comprises: a substrate; a doped upper region of said substrate having a first type of doping; a first implant region located below and being in direct contact with said doped upper region, said first implant region having a second type of doping so that a pn-junction is located between said doped upper region and said first implant region; and a second implant region located below said first implant region and having said second type of doping, and wherein a peak in a doping profile of said second type of doping is located in said second implant region.Type: ApplicationFiled: May 10, 2022Publication date: November 10, 2022Inventors: Daniel Gäbler, Alexander Zimmer, Robin Weirauch
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Patent number: 11404461Abstract: A Complementary Metal Oxide Semiconductor, CMOS, device for radiation detection. The CMOS device includes a semiconductor diffusion layer having a photodetector region for receiving incident light, and a polysilicon layer having a patterned structure in a region at least partially overlapping the photodetector region. The structure includes a plurality of features being perforations extending through the polysilicon layer or columns of polysilicon, wherein the perforations are filled with, or the columns are surrounded by, a dielectric material.Type: GrantFiled: June 25, 2019Date of Patent: August 2, 2022Assignee: X-FAB SEMICONDUCTOR FOUNDRIES GMBHInventor: Daniel Gäbler
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Publication number: 20220149222Abstract: A light sensitive semiconductor structure including a pn-junction in a silicon substrate. The pn-junction includes a central part and an edge part around surrounding the central part, the edge part being in contact with a surface of the silicon substrate. The structure further includes a plasma shielding structure covering at least a depletion width of the pn-junction over at least a part of the edge part where the edge part contacts the surface of the silicon substrate.Type: ApplicationFiled: November 10, 2021Publication date: May 12, 2022Applicant: X-FAB Global Services GmbHInventor: Daniel GÄBLER
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Publication number: 20220149105Abstract: A semiconductor imaging apparatus including a light detection device in a silicon substrate, an optical filter arranged to filter light incident on the light detection device and including a gap for allowing unfiltered light to reach the silicon substrate, an isolation structure for stopping light generated charge carriers in the silicon substrate from reaching the light detection device, and a photodiode for detecting the charge carriers.Type: ApplicationFiled: October 21, 2021Publication date: May 12, 2022Applicant: X-FAB Global Services GmbHInventors: Daniel Gäbler, Alexander Zimmer
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Patent number: 11276787Abstract: A semiconductor device for light detection comprises: a photodiode comprising an optical active region; and a resistor connected to said photodiode and overlapping at least a part of said optical active region, wherein the resistor comprising an anti-reflective coating for reducing reflection loss.Type: GrantFiled: April 21, 2020Date of Patent: March 15, 2022Assignee: X-FAB Semiconductor Foundries GmbHInventor: Daniel Gäbler
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Publication number: 20210399149Abstract: A dark reference device comprises: a photodiode comprising an optical active area; a light shield configured to prevent light from entering said optical active area, wherein said light shield comprises first and second overlapping metal covers, and wherein each of said metal covers comprises a plurality of openings overlapping said optical active area.Type: ApplicationFiled: June 17, 2021Publication date: December 23, 2021Inventors: Daniel Gäbler, Pablo Siles
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Publication number: 20210375968Abstract: An optical sensor including an array of photodiodes having a first and a second photodiode, each having an optical active region and a peripheral region. The sensor further includes a metal layer having a plurality of metal wires located in the peripheral regions of the first and second photodiodes, wherein the first photodiode is connected to a first subset of metal wires of the plurality of metal wires and wherein the second photodiode is connected to a second, different subset of metal wires of the plurality of metal wires.Type: ApplicationFiled: May 28, 2021Publication date: December 2, 2021Applicant: X-FAB Global Services GmbHInventor: Daniel Gäbler
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Patent number: 11177410Abstract: Electrically modulatable photodiode, comprising a substrate having a first and a second p-n junction, a common contact for jointly contacting the p or n dopings of the two p-n junctions, and two further contacts for separately contacting the other doping of the p and n dopings of the two p-n junctions, and a circuit, wherein the circuit is designed to measure a current flow caused by charge carriers which have been generated by impinging radiomagnetic waves in the substrate and which have reached the first further contact, and to switch the second further contact at different times to at least one first and one second switching state, wherein in the first switching state the second further contact is switched to the floating state and in the second switching state a potential is applied, and wherein a blocking voltage applied between the common contact and the first further contact is constant.Type: GrantFiled: March 13, 2019Date of Patent: November 16, 2021Assignee: X-FAB SEMICONDUCTOR FOUNDRIES GMBHInventors: Daniel Gäbler, Sebastian Wicht
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Patent number: 11107851Abstract: A semiconductor device for light detection including a semiconductor layer having an optical active region for receiving incident light and a peripheral region around the optical active region. The device further includes a lens layer including a first lens for directing light into the optical active region, the first lens being located in a first region of the lens layer which overlaps a part but not the whole of the optical active region in the semiconductor layer.Type: GrantFiled: August 7, 2019Date of Patent: August 31, 2021Assignee: X-FAB SEMICONDUCTOR FOUNDRIES GMBHInventor: Daniel Gäbler
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Publication number: 20210255231Abstract: A semiconductor structure for measuring a breakdown voltage of a pn-junction, said semiconductor structure comprises: a substrate; a sensor device comprising an optical active region comprising said pn-junction in said substrate, wherein said sensor device is configured to apply a reverse bias voltage to said pn-junction; and an emitter located adjacent to said optical active region in said substrate and configured to provide charge carriers to said optical active region in order to trigger breakdown of said pn-junction when said reverse bias voltage is equal to or greater than said breakdown voltage.Type: ApplicationFiled: February 18, 2021Publication date: August 19, 2021Inventors: Alexander Zimmer, Daniel Gäbler
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Publication number: 20200411710Abstract: A single photon avalanche diode (SPAD) device comprises: a silicon layer; an active region in said silicon layer for detecting incident light; and a blocking structure overlapping said active region for blocking incident light having a wavelength at least in the range of 200 nm to 400 nm, so that light having said wavelength can only be detected by said SPAD device when incident upon a region of said silicon layer outside of said active region.Type: ApplicationFiled: June 24, 2020Publication date: December 31, 2020Inventors: Daniel Gäbler, Hannes Schmidt, Pablo Siles, Matthias Krojer, Alexander Zimmer
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Publication number: 20200343389Abstract: A semiconductor device for light detection comprises: a photodiode comprising an optical active region; and a resistor connected to said photodiode and overlapping at least a part of said optical active region, wherein the resistor comprising an anti-reflective coating for reducing reflection loss.Type: ApplicationFiled: April 21, 2020Publication date: October 29, 2020Inventor: Daniel Gäbler
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Patent number: 10672808Abstract: An optical sensor in which photo currents generated by light in the visible and infrared wavelength ranges are to be tapped separately at pn junctions of active regions. The active regions include n- or p-doping and are formed in a p-substrate 52. The optical sensor comprises a surface-near first active region 12, and a second active region 14 subjacent to the first active region 12 and forming together with the first active region 12 a pn junction 22 that is short-circuited. A third active region 20 is subjacent to the second active region 14 and forming together with the second active region a further pn junction 23. Together with a fourth active region 24 subjacent to the second active region 20, a further pn junction 25, 29 is formed together with the third active region 20 and the substrate 52.Type: GrantFiled: August 6, 2019Date of Patent: June 2, 2020Assignee: X-FAB Semiconductor Foundries GmbHInventor: Daniel Gaebler
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Publication number: 20200052026Abstract: A semiconductor device for light detection including a semiconductor layer having an optical active region for receiving incident light and a peripheral region around the optical active region. The device further includes a lens layer including a first lens for directing light into the optical active region, the first lens being located in a first region of the lens layer which overlaps a part but not the whole of the optical active region in the semiconductor layer.Type: ApplicationFiled: August 7, 2019Publication date: February 13, 2020Applicant: X-FAB Semiconductor Foundries GmbHInventor: Daniel Gäbler
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Publication number: 20190393251Abstract: A Complementary Metal Oxide Semiconductor, CMOS, device for radiation detection. The CMOS device includes a semiconductor diffusion layer having a photodetector region for receiving incident light, and a polysilicon layer having a patterned structure in a region at least partially overlapping the photodetector region. The structure includes a plurality of features being perforations extending through the polysilicon layer or columns of polysilicon, wherein the perforations are filled with, or the columns are surrounded by, a dielectric material.Type: ApplicationFiled: June 25, 2019Publication date: December 26, 2019Applicant: X-FAB Semiconductor Foundries GmbHInventor: Daniel Gäbler
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Publication number: 20190363113Abstract: An optical sensor in which photo currents generated by light in the visible and infrared wavelength ranges are to be tapped separately at pn junctions of active regions. The active regions include n- or p-doping and are formed in a p-substrate 52. The optical sensor comprises a surface-near first active region 12, and a second active region 14 subjacent to the first active region 12 and forming together with the first active region 12 a pn junction 22 that is short-circuited. A third active region 20 is subjacent to the second active region 14 and forming together with the second active region a further pn junction 23. Together with a fourth active region 24 subjacent to the second active region 20, a further pn junction 25, 29 is formed together with the third active region 20 and the substrate 52.Type: ApplicationFiled: August 6, 2019Publication date: November 28, 2019Inventor: Daniel Gaebler
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Publication number: 20190288151Abstract: Electrically modulatable photodiode, comprising a substrate having a first and a second p-n junction, a common contact for jointly contacting the p or n dopings of the two p-n junctions, and two further contacts for separately contacting the other doping of the p and n dopings of the two p-n junctions, and a circuit, wherein the circuit is designed to measure a current flow caused by charge carriers which have been generated by impinging radiomagnetic waves in the substrate and which have reached the first further contact, and to switch the second further contact at different times to at least one first and one second switching state, wherein in the first switching state the second further contact is switched to the floating state and in the second switching state a potential is applied, and wherein a blocking voltage applied between the common contact and the first further contact is constant.Type: ApplicationFiled: March 13, 2019Publication date: September 19, 2019Inventors: Daniel GÄBLER, Sebastian WICHT