Patents by Inventor Daniel G. Hannoun

Daniel G. Hannoun has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of forming a low resistance semiconductor device and structure therefor
    Publication number: 20040219752
    Abstract: A transistor (10) is formed with a low resistance trench structure that is utilized for a gate (17) of the transistor. The low resistance trench structure facilitates forming a shallow source region (49) that reduces the gate-to-source capacitance.
    Type: Application
    Filed: May 11, 2004
    Publication date: November 4, 2004
    Inventors: Misbahul Azam, Jeffrey Pearse, Daniel G. Hannoun
  • Method of forming a low resistance semiconductor device and structure therefor
    Patent number: 6753228
    Abstract: A transistor (10) is formed with a low resistance trench structure that is utilized for a gate (17) of the transistor. The low resistance trench structure facilitates forming a shallow source region (49) that reduces the gate-to-source capacitance.
    Type: Grant
    Filed: October 15, 2002
    Date of Patent: June 22, 2004
    Assignee: Semiconductor Components Industries, L.L.C.
    Inventors: Misbahul Azam, Jeffrey Pearse, Daniel G. Hannoun
  • METHOD OF FORMING A LOW RESISTANCE SEMICONDUCTOR DEVICE AND STRUCTURE THEREFOR
    Publication number: 20040070028
    Abstract: A transistor (10) is formed with a low resistance trench structure that is utilized for a gate (17) of the transistor. The low resistance trench structure facilitates forming a shallow source region (49) that reduces the gate-to-source capacitance.
    Type: Application
    Filed: October 15, 2002
    Publication date: April 15, 2004
    Applicant: Semiconductor Components Industries, LLC
    Inventors: Misbahul Azam, Jeffrey Pearse, Daniel G. Hannoun