Patents by Inventor Daniel G. Queyssac

Daniel G. Queyssac has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5950072
    Abstract: An integrated circuit package had leadless solderballs attached to the substrate with a conductive thermoplastic adhesive. The leadless solderballs are preferably made with a copper-nickel-gold alloy. The conductive thermoplastic is preferably of the silver fill type. The integrated circuit package is placed in a frame and held to the printed circuit board with a clamp or with a screw.
    Type: Grant
    Filed: July 25, 1997
    Date of Patent: September 7, 1999
    Assignee: STMicroelectronics, Inc.
    Inventor: Daniel G. Queyssac
  • Patent number: 5714803
    Abstract: An integrated circuit package has leadless solderballs attached to the substrate with a conductive thermoplastic adhesive. The leadless solderballs are preferably made with a copper-nickel-gold alloy. The conductive thermoplastic is preferably of the silver fill type. The integrated circuit package is placed in a frame and held to the printed circuit board with a clamp or with a screw.
    Type: Grant
    Filed: July 28, 1995
    Date of Patent: February 3, 1998
    Assignee: SGS-Thomson Microelectronics, Inc.
    Inventor: Daniel G. Queyssac
  • Patent number: 5426059
    Abstract: A vertical bipolar structure is fabricated utilizing high energy implant techniques. An epitaxial substrate (10) is first formed of the first conductivity material. A deep implant is formed in the substrate to a first level to form a layer (12) of the first conductivity type. Thereafter, a second implant at a slightly lower energy level is made to provide a second conductivity type layer (14) on top of the layer (12). A third implant of a lower energy of the first conductivity type material is then made to form an even shallower depth layer (16). This is followed by a final lower energy implant to form a second conductivity type layer (18) above the layer (16). This therefore results in a vertical stack of alternating conductivity type layers. The substrate is then patterned and etched to form vertical structures (26) which are disposed in an array with trenches aligned along the columns and the rows.
    Type: Grant
    Filed: May 26, 1994
    Date of Patent: June 20, 1995
    Inventor: Daniel G. Queyssac