Patents by Inventor Daniel Gall

Daniel Gall has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Pore formation by in situ etching of nanorod PEM fuel cell electrodes
    Patent number: 8980502
    Abstract: The invention includes a method for use in creating electrochemical electrodes including removing a supporting structure in situ after the assembly of the electrochemical cell.
    Type: Grant
    Filed: July 8, 2010
    Date of Patent: March 17, 2015
    Assignee: Rensselaer Polytechnic Institute
    Inventors: Michael David Gasda, Glenn Eisman, Daniel Gall
  • PORE FORMATION BY IN SITU ETCHING OF NANOROD PEM FUEL CELL ELECTRODES
    Publication number: 20120107723
    Abstract: The invention includes a method for use in creating electrochemical electrodes including removing a supporting structure in situ after the assembly of the electrochemical cell.
    Type: Application
    Filed: July 8, 2010
    Publication date: May 3, 2012
    Applicant: RENSSELAER POLYTECHNIC INSTITUTE
    Inventors: Michael David Gasda, Glenn Eisman, Daniel Gall
  • Method for forming an epitaxial cobalt silicide layer on MOS devices
    Patent number: 6797598
    Abstract: A method for forming an epitaxial cobalt silicide layer on a MOS device includes sputter depositing cobalt in an ambient to form a first layer of cobalt suicide on a gate and source/drain regions of the MOS device. Subsequently, cobalt is sputter deposited again in an ambient of argon to increase the thickness of the cobalt silicide layer to a second thickness.
    Type: Grant
    Filed: August 22, 2002
    Date of Patent: September 28, 2004
    Assignee: The Board of Trustees of the University of Illinois
    Inventors: Chong Wee Lim, Chan Soo Shin, Daniel Gall, Ivan Georgiev Petrov, Joseph E. Greene
  • Method for forming an epitaxial cobalt silicide layer on MOS devices
    Publication number: 20040038528
    Abstract: A method for forming an epitaxial cobalt silicide layer on a MOS device includes sputter depositing cobalt in an ambient to form a first layer of cobalt suicide on a gate and source/drain regions of the MOS device. Subsequently, cobalt is sputter deposited again in an ambient of argon to increase the thickness of the cobalt silicide layer to a second thickness.
    Type: Application
    Filed: August 22, 2002
    Publication date: February 26, 2004
    Applicant: The Board of Trustees of the University of Illinois
    Inventors: Chong Wee Lim, Chan Soo Shin, Daniel Gall, Ivan Georgiev Petrov, Joseph E. Greene