Abstract: Semiconductor device packages are provided. In one example, the semiconductor device package includes a semiconductor die. The semiconductor die includes a wide bandgap semiconductor material. The semiconductor die includes a metallization layer on a surface of the semiconductor die. The semiconductor device package includes a submount. The metallization of the semiconductor die is directly bonded to the submount.

Abstract: Die-attach materials for semiconductor device packages are provided. In one example, a semiconductor device package includes a submount. The semiconductor device package includes a semiconductor die comprising a wide bandgap semiconductor. The semiconductor device package includes a die-attach layer between the submount and the semiconductor die. The die-attach layer comprises gold (Au), tin (Sn), and cobalt (Co).

Abstract: Semiconductor packages are provided. In one example, a semiconductor package includes a submount having a first surface and a second surface opposing the first surface. The semiconductor package includes at least one semiconductor die attached to the second surface of submount. The semiconductor package includes an insulating portion on the second surface of the submount and on the at least one semiconductor die. The insulating portion forms a first external surface of the semiconductor package. The semiconductor package includes at least one through-mold via extending from the first external surface through the insulating portion to at least one of the semiconductor die or the submount.

Abstract: Semiconductor packages are provided. In one example, a semiconductor package includes a submount and a semiconductor die attached to the submount using a die-attach material. The semiconductor die includes a sidewall having at least one fillet reduction feature. The at least one fillet reduction feature is configured to limit a fillet height of the die-attach material along the sidewall of the semiconductor die.

Abstract: Semiconductor packages are provided. In one example, a power semiconductor package includes a first carrier submount, a second carrier submount, and a plurality of semiconductor die. Each semiconductor die of the plurality of semiconductor die has a first surface and an opposing second surface. Furthermore, for each semiconductor die of the plurality of semiconductor die, the first surface is directly coupled to the first carrier submount, and the second surface is directly coupled to the second carrier submount.

Abstract: A control device may include at least a first electromechanical setpoint controller having a prime mover that applies a setpoint force in response to at least a controller signal, and a controller circuit that generates at least the controller signal in response to setpoint control data. A pneumatic controller may have at least one gas flow inlet and a flow regulator that varies a gas flow property in response to the setpoint force.

Abstract: A control device may include at least a first electromechanical setpoint controller having a prime mover that applies a setpoint force in response to at least a controller signal, and a controller circuit that generates at least the controller signal in response to setpoint control data. A pneumatic controller may have at least one gas flow inlet and a flow regulator that varies a gas flow property in response to the setpoint force.