Patents by Inventor Daniel Glöss

Daniel Glöss has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11918979
    Abstract: The invention relates to a method for activating a photocatalytically active, for example titanium-dioxide-containing, outer layer (13; 23) deposited on a composite, by means of at least one element (14; 24) generating a radiation, for example for generating ultraviolet radiation. The following method steps are comprised here: •a) forming the at least one radiation-generating first element (14; 24) within the composite; •b) forming at least one sensor (16; 26) within the composite; •c) recording an actual value of a physical variable characterizing luminous radiation by means of the at least one sensor (16; 26), wherein the luminous radiation is emitted by a light-generating second element (15; 25); •d) comparing the recorded actual value with a first threshold value within an evaluation device and switching on the at least one radiation-generating first element (14; 24) if the actual value is below or above the first threshold value.
    Type: Grant
    Filed: July 25, 2019
    Date of Patent: March 5, 2024
    Assignee: Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
    Inventors: Gaby Gotzmann, Uwe Vogel, Daniel Glöss, Jessy Schönfelder, Philipp Wartenberg
  • Patent number: 9994950
    Abstract: A method for depositing a piezoelectric film may be provided containing AlN on a substrate by means of magnetron sputtering of at least two targets—of which at least one target contains aluminum—within a vacuum chamber, into which a mixture of gases containing at least reactive nitrogen gas and an inert gas is introduced, and during which magnetron sputtering the unipolar pulse mode and the bipolar pulse mode are alternately used. A film may be provided containing AlN of formula AlXNYOZ, where (0.1?X?1.2); (0.1?Y?1.2) and (0.001?Z?0.1).
    Type: Grant
    Filed: June 24, 2014
    Date of Patent: June 12, 2018
    Assignees: FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ANGEWANDTEN FORSCHUNG E.V., TU DRESDEN
    Inventors: Hagen Bartzsch, Daniel Glöß, Peter Frach, Stephan Barth
  • Publication number: 20160369390
    Abstract: A method for depositing a piezoelectric film may be provided containing AIN on a substrate by means of magnetron sputtering of at least two targets—of which at least one target contains aluminum—within a vacuum chamber, into which a mixture of gases containing at least reactive nitrogen gas and an inert gas is introduced, and during which magnetron sputtering the unipolar pulse mode and the bipolar pulse mode are alternately used. A film may be provided containing AIN of formula AlXNYOZ, where (0.1?X?1.2); (0.1?Y?1.2) and (0.001?Z?0.
    Type: Application
    Filed: June 24, 2014
    Publication date: December 22, 2016
    Inventors: Hagen Bartzsch, Daniel Glöß, Peter Frach, Stephan Barth