Abstract: A compound having the structures: or a pharmaceutically acceptable salt thereof, or a pharmaceutically acceptable solvate of said compound or pharmaceutically acceptable salt, wherein; R selected from the group consisting of H, C1-C6 alkyl, C1-C6 alkoxy and —(CH2)m—W, where W is C3-C8 cycloalkyl, bicycloalkyl, bridged bicycloalkyl, phenyl, 5- or 6-membered heteroaryl or heterocyclic containing one, two or three heteroatoms selected from the group consisting of N, S and O atoms; wherein each of said alkyl, cycloalkyl, alkoxy, heterocyclic, phenyl, naphthyl or heteroaryl may be unsubstituted or substituted by phenyl, halo, cyano, deuterium, hydroxy, C1-C6 alkyl, C1-C6 alkoxy, —SO2—R?, —CONR?R?, NR?COR?, —NR?CONR?R?, —NR?CO2R?, —(CH2)n—SO2—R?, —NHSO2—R?, —NR?SO2—R?, —SO2NR?R?, NR?R? or SR? where R? and R? are independently H, C1-C6 alkyl or C3-C8 cycloalkyl; R1 selected from the group consisting of phenyl, naphthyl, 5- or 6-membered heteroaryl or heterocyclic containing one, two, three or four heteroatoms se

Abstract: An attenuator includes: a first circuit including a common collector or common drain amplifier formed of a first transistor having its control node connected to an input of the attenuator and its emitter or source connected to an intermediate node of the attenuator; and a second circuit including a common collector or common drain amplifier formed of a second transistor having its emitter or source connected to the intermediate node and its control node connected to an output of the attenuator.

Abstract: A wireless unit includes a first motion sensitive device; communications circuitry for wirelessly communicating with a further wireless unit; and a processing device configured to compare at least one first motion vector received from the first motion sensitive device with at least one second motion vector received from a second motion sensitive device of the further wireless unit.

Abstract: An attenuator includes: a first circuit including a common collector or common drain amplifier formed of a first transistor having its control node connected to an input of the attenuator and its emitter or source connected to an intermediate node of the attenuator; and a second circuit including a common collector or common drain amplifier formed of a second transistor having its emitter or source connected to the intermediate node and its control node connected to an output of the attenuator.

Abstract: A stand-alone device comprising a silicon wafer having its front surface including a first layer of a first conductivity type and a second layer of a second conductivity type forming a photovoltaic cell; first vias crossing the wafer from the rear surface of the first layer and second vias crossing the wafer from the rear surface of the second layer; metallization levels on the rear surface of the wafer, the external level of these metallization levels defining contact pads; an antenna formed in one of the metallization levels; and one or several chips assembled on said pads; the metallization levels being shaped to provide selected interconnects between the different elements of the device.

Abstract: A variable impedance device includes a passive tuner that includes at least one variable component, which is controllable to apply a variable impedance value to an input signal of the passive tuner. A low noise amplifier is configured to supply the input signal to the passive tuner by amplifying an input RF (radio frequency) signal.

Abstract: Transmission/reception device for signals having a wavelength of the microwaves, millimeter or terahertz type, comprising an antenna array. The antenna array comprises a first group of first omni-directional antennas and a second group of second directional antennas disposed around the first group of antennas.

Abstract: A semiconductor device includes a substrate. On at least one face of that substrate, integrated circuits are formed. At least one electromagnetic waveguide is also included, that waveguide including two metal plates that are placed on either side of at least one part of the thickness of the substrate and are located facing each other. Two longitudinal walls are placed facing each other and are formed by metal vias made in holes passing through the substrate in its thickness direction. The metal vias electrically connect the two metal plates.

Abstract: A variable impedance device includes a passive tuner that includes at least one variable component, which is controllable to apply a variable impedance value to an input signal of the passive tuner. A low noise amplifier is configured to supply the input signal to the passive tuner by amplifying an input RF (radio frequency) signal.

Abstract: Transmission/reception device for signals having a wavelength of the microwaves, millimeter or terahertz type, comprising an antenna array. The antenna array comprises a first group of first omni-directional antennas and a second group of second directional antennas disposed around the first group of antennas.

Abstract: A stand-alone device comprising a silicon wafer having its front surface including a first layer of a first conductivity type and a second layer of a second conductivity type forming a photovoltaic cell; first vias crossing the wafer from the rear surface of the first layer and second vias crossing the wafer from the rear surface of the second layer; metallization levels on the rear surface of the wafer, the external level of these metallization levels defining contact pads; an antenna formed in one of the metallization levels; and one or several chips assembled on said pads; the metallization levels being shaped to provide selected interconnects between the different elements of the device.

Abstract: An electronic device includes a semiconductor component having a support substrate in the form of a wafer. On one side of this substrate integrated circuits including an RF circuit and an antenna connected to this RF circuit are formed. A metal layer is situated on the other side of the substrate, facing the antenna. At least on metal via is provided in a through-hole in the substrate, this via being connected at one end to the metal layer and at the other end to the RF circuit, at the same reference potential node as the antenna.

Abstract: A semiconductor device includes a substrate. On at least one face of that substrate, integrated circuits are formed. At least one electromagnetic waveguide is also included, that waveguide including two metal plates that are placed on either side of at least one part of the thickness of the substrate and are located facing each other. Two longitudinal walls are placed facing each other and are formed by metal vias made in holes passing through the substrate in its thickness direction. The metal vias electrically connect the two metal plates.

Abstract: An antenna is formed with a self-supporting structure (1), a dielectric structure (2), and a conducting structure (3), each structure being formed from at least one structural element (10; 21, 22; 31-34). The structural elements of the different structures (1, 2, 3) constitute a stack in which these elements (10; 21, 22; 31-34) are connected to each other, and the dielectric structure (2) is formed in the stack by nano-imprinting.

Abstract: An an antenna is formed with a self-supporting structure (1), a dielectric structure (2), and a conducting structure (3), each structure being formed from at least one structural element (10; 21, 22; 31-34). The structural elements of the different structures (1, 2, 3) constitute a stack in which these elements (10; 21, 22; 31-34) are connected to each other, and the dielectric structure (2) is formed in the stack by nano-imprinting.

Abstract: A semiconductor device includes a substrate, for example made of silicon, and layers, deposited on this substrate. Within at least one of these layers a radio signal transmission/reception antenna is formed. Located between the antenna and the substrate, a screen for collecting induced currents between this antenna and this substrate is formed within at least one of the layers. The screen includes at least one main branch connected to a fixed potential, for example a ground reference, and a plurality of secondary branches connected to the main branch at one of their extremities. The collector screen accordingly presents a tree-like structure.

Abstract: An integrated inductor comprises a first substantially plane conducting track made on the surface of a substrate and having a shape which defines a predetermined number N of concentric turns. A first pair of access points corresponds to the two respective ends of the said first conducting track. In addition, at least a second pair of access points different from the access points of the first pair, are placed at two respective regions of the first conducting track.

Abstract: A semiconductor device includes a substrate, for example made of silicon, and layers, deposited on this substrate. Within at least one of these layers a radio signal transmission/reception antenna is formed. Located between the antenna and the substrate, a screen for collecting induced currents between this antenna and this substrate is formed within at least one of the layers. The screen includes at least one main branch connected to a fixed potential, for example a ground reference, and a plurality of secondary branches connected to the main branch at one of their extremities. The collector screen accordingly presents a tree-like structure.

Abstract: A multilayer semiconductor device includes at least one structure for transmitting electrical signals, and in particular, microwave signals. The device includes at least one electrically conductive enclosure that includes a bottom plate and a top plate in two different layers. Lateral walls connect the bottom and top plates. Electrically conductive connecting strips extend into the enclosure and are in an intermediate layer, and are electrically insulated from the enclosure. The enclosure has at least one passage through which extends electrical connections of the connecting strips, which are also electrically insulated from the enclosure.

Abstract: An integrated inductor comprises a first substantially plane conducting track made on the surface of a substrate and having a shape which defines a predetermined number N of concentric turns. A first pair of access points corresponds to the two respective ends of the said first conducting track. In addition, at least a second pair of access points different from the access points of the first pair, are placed at two respective regions of the first conducting track.