Abstract: A method for manufacturing a microfluidic device includes providing a first substrate having a first surface and a second surface located opposite the first surface. An etching mask is produced on the first surface, the etching mask having an opening. A recess is produced by etching in the first surface in a region of the opening. An electrically conductive material is deposited on the etching mask and/or a layer covering the etching mask, and on a region of a bottom of the recess below the opening.

Abstract: A method for manufacturing a microfluidic device includes providing a first substrate having a first surface and a second surface located opposite the first surface. An etching mask is produced on the first surface, the etching mask having an opening. A recess is produced by etching in the first surface in a region of the opening. An electrically conductive material is deposited on the etching mask and/or a layer covering the etching mask, and on a region of a bottom of the recess below the opening.

Abstract: A nano-electromechanical switch and a method for designing a nano-electromechanical switch. The nano-electromechanical switch includes at least one actuator electrode and a curved cantilever beam. The curved cantilever beam is adapted to flex in response to an activation voltage applied between the actuator electrode and the curved cantilever beam to provide an electrical contact between the curved cantilever beam and an output electrode of the nano-electromechanical switch. Before, during and after the curved cantilever beam flex in response to the activation voltage, a remaining gap between the curved cantilever beam and the actuator electrode is uniform.

Abstract: A dynamic logic gate includes a nano-electro-mechanical-switch, preferably a four-terminal-nano-electro-mechanical-switch. The invention further refers to dynamic logic cascade circuits comprising such a dynamic logic gate. In particular, embodiments of the invention concern dynamic logic cascade circuits comprising single or dual rail dynamic logic gates.

Abstract: A dynamic logic gate includes a nano-electro-mechanical-switch, preferably a four-terminal-nano-electro-mechanical-switch. The invention further refers to dynamic logic cascade circuits comprising such a dynamic logic gate. In particular, embodiments of the invention concern dynamic logic cascade circuits comprising single or dual rail dynamic logic gates.

Abstract: The present invention is directed to a nanoelectromechanical (NEM) switch comprising two electrodes (12, 18), wherein: at least one (18) of the electrodes comprises an active layer (10) thereon; and at least one (12) of the electrodes is movable along a given direction (z), from a: non-contact position to a contact position where one of the electrodes contacts the other one (18) of the electrodes, at the level of a contact point (P); and the active layer exhibits a conductive pathway (16), which pathway: extends along said given direction (z) to enable electrical conduction from one of the electrodes to the other one of the electrodes in the contact position; and is confined to a given region (R1) of the active layer, the region having nanoscale dimensions in a sectional plane (x, y) perpendicular to the given direction. The present invention is further directed to related devices, systems and methods.

Abstract: A nano-electromechanical switch and a method for designing a nano-electromechanical switch. The nano-electromechanical switch includes at least one actuator electrode and a curved cantilever beam. The curved cantilever beam is adapted to flex in response to an activation voltage applied between the actuator electrode and the curved cantilever beam to provide an electrical contact between the curved cantilever beam and an output electrode of the nano-electromechanical switch. Before, during and after the curved cantilever beam flex in response to the activation voltage, a remaining gap between the curved cantilever beam and the actuator electrode is uniform.

Abstract: The present invention is notably directed to an electromechanical switching device having: two electrodes, including: a first electrode, having layers of a first 2D layered material, which layers exhibit a first surface; and a second electrode, having layers of a second 2D layered material, which layers exhibit a second surface vis-à-vis said first surface; and an actuation mechanism, where: each of the first and second 2D layered materials is electrically conducting; and at least one of said two electrodes is actuatable by the actuation mechanism to modify a distance between the first surface and the second surface, such as to modify an electrical conductivity transverse to each of the first surface and the second surface and thereby enable current modulation between the first electrode and the second electrode.

Abstract: A nano-electromechanical switch and a method for designing a nano-electromechanical switch. The nano-electromechanical switch includes at least one actuator electrode and a curved cantilever beam. The curved cantilever beam is adapted to flex in response to an activation voltage applied between the actuator electrode and the curved cantilever beam to provide an electrical contact between the curved cantilever beam and an output electrode of the nano-electromechanical switch. Before, during and after the curved cantilever beam flex in response to the activation voltage, a remaining gap between the curved cantilever beam and the actuator electrode is uniform.

Abstract: The present invention is notably directed to an electromechanical switching device having: two electrodes, including: a first electrode, having layers of a first 2D layered material, which layers exhibit a first surface; and a second electrode, having layers of a second 2D layered material, which layers exhibit a second surface vis-à-vis said first surface; and an actuation mechanism, where: each of the first and second 2D layered materials is electrically conducting; and at least one of said two electrodes is actuatable by the actuation mechanism to modify a distance between the first surface and the second surface, such as to modify an electrical conductivity transverse to each of the first surface and the second surface and thereby enable current modulation between the first electrode and the second electrode.

Abstract: A nano-electro-mechanical switch includes an input electrode, a body electrode, an insulating layer, an actuator electrode, an output electrode, and a cantilever beam adapted to flex in response to an actuation voltage applied between the body electrode and the actuator electrode. The cantilever beam includes the input electrode, the body electrode and the insulating layer, the latter separating the body electrode from the input electrode, the cantilever beam being configured such that, upon flexion of the cantilever beam, the input electrode comes in contact with the output electrode at a single mechanical contact point at the level of an end of the cantilever beam.

Abstract: A nano-electro-mechanical switch includes an input electrode, a body electrode, an insulating layer, an actuator electrode, an output electrode, and a cantilever beam adapted to flex in response to an actuation voltage applied between the body electrode and the actuator electrode. The cantilever beam includes the input electrode, the body electrode and the insulating layer, the latter separating the body electrode from the input electrode, the cantilever beam being configured such that, upon flexion of the cantilever beam, the input electrode comes in contact with the output electrode at a single mechanical contact point at the level of an end of the cantilever beam.

Abstract: The present invention exploits the combination of the amplification, provided by the integration of a FET (or any other three terminal active device), with the signal modulation, provided by the MEM resonator, to build a MEM resonator with built-in transistor (hereafter called active MEM resonator). In these devices, a mechanical displacement is converted into a current modulation and depending on the active MEM resonator geometry, number of gates and bias conditions it is possible to selectively amplify an applied signal. This invention integrates proposes to integrate transistor and micro-electro-mechanical resonator operation in a device with a single body and multiple surrounding gates for improved performance, control and functionality. Moreover, under certain conditions, an active resonator can serve as DC-AC converter and provide at the output an AC signal corresponding to its mechanical resonance frequency.

Abstract: A dynamic logic gate includes a nano-electro-mechanical-switch, preferably a four-terminal-nano-electro-mechanical-switch. The invention further refers to dynamic logic cascade circuits comprising such a dynamic logic gate. In particular, embodiments of the invention concern dynamic logic cascade circuits comprising single or dual rail dynamic logic gates.

Abstract: The present invention is directed to a nanoelectromechanical (NEM) switch comprising two electrodes (12, 18), wherein: at least one (18) of the electrodes comprises an active layer (10) thereon; and at least one (12) of the electrodes is movable along a given direction (z), from a: non-contact position to a contact position where one of the electrodes contacts the other one (18) of the electrodes, at the level of a contact point (P); and the active layer exhibits a conductive pathway (16), which pathway: extends along said given direction (z) to enable electrical conduction from one of the electrodes to the other one of the electrodes in the contact position; and is confined to a given region (R1) of the active layer, said region having nanoscale dimensions in a sectional plane (x, y) perpendicular to said given direction. The present invention is further directed to related devices, systems and methods.

Abstract: A nano-electro-mechanical switch includes an input electrode, a body electrode, an insulating layer, an actuator electrode, an output electrode, and a cantilever beam adapted to flex in response to an actuation voltage applied between the body electrode and the actuator electrode. The cantilever beam includes the input electrode, the body electrode and the insulating layer, the latter separating the body electrode from the input electrode, the cantilever beam being configured such that, upon flexion of the cantilever beam, the input electrode comes in contact with the output electrode at a single mechanical contact point at the level of an end of the cantilever beam.

Abstract: A nano-electro-mechanical switch includes an input electrode, a body electrode, an insulating layer, an actuator electrode, an output electrode, and a cantilever beam adapted to flex in response to an actuation voltage applied between the body electrode and the actuator electrode. The cantilever beam includes the input electrode, the body electrode and the insulating layer, the latter separating the body electrode from the input electrode, the cantilever beam being configured such that, upon flexion of the cantilever beam, the input electrode comes in contact with the output electrode at a single mechanical contact point at the level of an end of the cantilever beam.

Abstract: A dynamic logic gate includes a nano-electro-mechanical-switch, preferably a four-terminal-nano-electro-mechanical-switch. The invention further refers to dynamic logic cascade circuits comprising such a dynamic logic gate. In particular, embodiments of the invention concern dynamic logic cascade circuits comprising single or dual rail dynamic logic gates.

Abstract: The present invention exploits the combination of the amplification, provided by the integration of a FET (or any other three terminal active device), with the signal modulation, provided by the MEM resonator, to build a MEM resonator with built-in transistor (hereafter called active MEM resonator). In these devices, a mechanical displacement is converted into a current modulation and depending on the active MEM resonator geometry, number of gates and bias conditions it is possible to selectively amplify an applied signal. This invention integrates proposes to integrate transistor and micro-electro-mechanical resonator operation in a device with a single body and multiple surrounding gates for improved performance, control and functionality. Moreover, under certain conditions, an active resonator can serve as DC-AC converter and provide at the output an AC signal corresponding to its mechanical resonance frequency.

Abstract: The present invention exploits the combination of the amplification, provided by the integration of a FET (or any other active device with two or more terminals), with the signal modulation, provided by the MEM resonator, to build a MEM resonator with built-in transistor (hereafter called active MEM resonator). In these devices, a mechanical displacement is converted into a current modulation and depending on the active MEM resonator geometry, number of gates and bias conditions it is possible to selectively amplify an applied signal. This invention integrates proposes to integrate transistor and micro-electro-mechanical resonator operation in a device with a single body and multiple surrounding gates for improved performance, control and functionality. Moreover, under certain conditions, an active resonator can serve as DC-AC converter and provide at the output an AC signal corresponding to its mechanical resonance frequency.