Abstract: A time-passage indicator device can comprise a housing, a plurality of light elements coupled to the housing, a window comprising an inner surface and an outer surface, and a processor that controls the plurality of light elements. The window can be attached to the housing and diffuse or scatter light emitted from the plurality of light elements. The light elements can emit the light through the window to form an illuminated region. The processor can control the light elements such that the illuminated region changes to indicate the passage of time. The illuminated region can have a minimum viewing angle from 0 degrees to 20 degrees, where the minimum viewing angle of 0 degrees is measured from a plane of the base surface.

Abstract: A time-passage indicator device can comprise a housing, a plurality of light elements located inside the housing, a window comprising an inner and an outer surface, and a processor that controls the plurality of light elements. Some devices also contain a touch sensor, and the processor controls the light elements based upon signals from the touch sensor. The window can be attached to the housing and diffuses or scatters the light from the plurality of light elements. The light elements can emit light through the window forming an illuminated region viewable by a user. The processor can control the light elements such that the illuminated region changes to indicate the passage of time. The illuminated region can be viewable from all angles between 10 degrees and 90 degrees, where the angle of 90 degrees corresponds to a normal viewing angle.

Abstract: The present disclosure provides techniques for a ventilator system with a removable airway. A ventilator system may include a removable airway and a base unit. The removable airway may include an air inlet port, a patient inhalation port, an air exhaust port, and a patient exhalation port. The base unit may include two pinch valves. In some cases, the removable airway does not comprise any openings other than the air inlet port, the air exhaust port, the patient inhalation port, and the patient exhalation port. In some cases, the removable airway is configured such that air inside the removable airway does not contact any part of the base unit. In some cases, the removable airway is configured such that air that enters the patient exhalation port is contained within the removable airway along a contiguous path and at no point does the contiguous path contact the base unit.

Abstract: The present disclosure provides techniques for a ventilator system with a removable airway. A ventilator system may include a removable airway and a base unit. The removable airway may include an air inlet port, a patient inhalation port, an air exhaust port, a patient exhalation port, a first portion of a pressure sensor, and a first portion of a flow sensor. The base unit may include two pinch valves, a second portion of the pressure sensor, and a second portion of the flow sensor. In some cases, the airway does not comprise any openings other than the air inlet port, the air exhaust port, the patient inhalation port, and the patient exhalation port. In some cases, air inside the removable airway does not contact any part of the base unit without first exiting the air exhaust port.

Abstract: The present disclosure provides techniques for a ventilator system with a removable airway. A ventilator system may include a removable airway and a base unit. The removable airway may include an air inlet port, a patient inhalation port, an air exhaust port, a patient exhalation port, a first portion of a pressure sensor, and a first portion of a flow sensor. The base unit may include two pinch valves, a second portion of the pressure sensor, and a second portion of the flow sensor. In some cases, the airway does not comprise any openings other than the air inlet port, the air exhaust port, the patent inhalation port, and the patient exhalation port. In some cases, air inside the removable airway does not contact any part of the base unit without first exiting the air exhaust port.

Abstract: A time-passage indicator device can comprise a housing, a plurality of light elements located inside the housing, a window comprising an inner and an outer surface, and a processor that controls the plurality of light elements. Some devices also contain a touch sensor, and the processor controls the light elements based upon signals from the touch sensor. The window can be attached to the housing and diffuses or scatters the light from the plurality of light elements. The light elements can emit light through the window forming an illuminated region viewable by a user. The processor can control the light elements such that the illuminated region changes to indicate the passage of time. The illuminated region can be viewable from all angles between 10 degrees and 90 degrees, where the angle of 90 degrees corresponds to a normal viewing angle.

Abstract: Prostate treatment using fluid stream to resect prostate tissue, thereby relieving symptoms of conditions such as BPH, prostatitis, and prostatic carcinoma. A device having a fluid delivery element is positioned within a lumen of the urethra within the prostate. A fluid stream is directed outwardly from the fluid delivery element toward a wall of the urethral lumen. The fluid delivery element is moved to scan the fluid stream over the wall to remove a volume of tissue surrounding the lumen. The fluid may be combined with therapeutically active substances or with substances that increase resection efficiency. Fluid force may be adjusted to provide selective tissue resection such that soft tissue is removed while harder tissue is left undamaged. In order to gain a working space within the urethra, another fluid may be introduced to insufflate the urethra in the region of treatment.

Abstract: Prostate treatment using fluid stream to resect prostate tissue, thereby relieving symptoms of conditions such as BPH, prostatitis, and prostatic carcinoma. A device having a fluid delivery element is positioned within a lumen of the urethra within the prostate. A fluid stream is directed outwardly from the fluid delivery element toward a wall of the urethral lumen. The fluid delivery element is moved to scan the fluid stream over the wall to remove a volume of tissue surrounding the lumen. The fluid may be combined with therapeutically active substances or with substances that increase resection efficiency. Fluid force may be adjusted to provide selective tissue resection such that soft tissue is removed while harder tissue is left undamaged. In order to gain a working space within the urethra, another fluid may be introduced to insufflate the urethra in the region of treatment.

Abstract: A metal source/drain field effect transistor is fabricated such that the source/drain regions are deposited, multilayer structures, with at least a second metal deposited on exposed surfaces of a first metal.

Abstract: A transistor includes a semiconductor channel disposed nearby a gate and in an electrical path between a source and a drain, wherein the channel and at least one of the source or the drain are separated by an interface layer so as to form a channel-interface layer-source/drain junction in which a Fermi level of the semiconductor channel is depinned in a region near the junction and the junction has a specific contact resistance of less than approximately 1000 ?-?m2. The interface layer may include a passivating material such as a nitride, a fluoride, an oxide, an oxynitride, a hydride and/or an arsenide of the semiconductor of the channel. In some cases, the interface layer consists essentially of a monolayer configured to depin the Fermi level of the semiconductor of the channel, or an amount of passivation material sufficient to terminate all or a sufficient number of dangling bonds of the semiconductor channel to achieve chemical stability of the surface.

Abstract: Processes for forming self-aligned, deposited source/drain, insulated gate, transistors and, in particular, FETs. By depositing a source/drain in a recess such that it remains only in the recess, the source/drain can be formed self-aligned to a gate and/or a channel of such a device. For example, in one such process a gate structure of a transistor may be formed and, in a material surrounding the gate structure, a recess created so as to be aligned to an edge of the gate structure. Subsequently, a source/drain conducting material may be deposited in the recess. Such a source/drain conducting material may be deposited, in some cases, as layers, with one or more such layers being planarized following its deposition. In this way, the conducting material is kept within the boundaries of the recess.

Abstract: An electrical device in which an interface layer is disposed between and in contact with a metal and a Si-based semiconductor, the interface layer being of a thickness effective to depin of the Fermi level of the semiconductor while still permitting current to flow between the metal and the semiconductor. The interface layer may include a layer of a passivating material (e.g., made from nitrogen, oxygen, oxynitride, arsenic, hydrogen and/or fluorine) and sometimes also includes a separation layer. In some cases, the interface layer may be a monolayer of a semiconductor passivating material. The interface layer thickness corresponds to a minimum specific contact resistance of less than or equal to 10 ?-?m2 or even less than or equal to 1 ?-?m2 for the electrical device.

Abstract: A transistor includes one or more channel taps containing a stack consisting at least in part of a semiconductor an interfacial III-VI layered compound and a conductor. The III-VI compound consists primarily of atoms from Groups IIIA-B and from Group VIA of the Periodic Table of the Elements in an approximate 1:1 ratio. These materials may be formed as layers of covalently bonded elements from Groups IIIA-B and covalently bonded Group VIA elements, adjacent and respective planes of which may be bonded by Van der Waals forces (e.g., to form a single bilayer consisting of a single plane of atoms from Groups IIIA-B and a single plane of Group VIA atoms). One particular III-VI material from which the interfacial layer is made, especially for p-channel transistors, is GaSe. Other III-VI compounds, whether pure compounds or alloys of pure compounds, may also be used.

Abstract: An electrical junction that includes a semiconductor (e.g., C, Ge, or an Si-based semiconductor), a conductor, and an interface layer disposed therebetween. The interface layer is sufficiently thick to depin a Fermi level of the semiconductor, yet sufficiently thin to provide the junction with a specific contact resistance of less than or equal to approximately 1000 ?-?m2, and in some cases a minimum specific contact resistance.

Abstract: The present invention provides a magnetic compensation system and a method of utilizing a magnetic compensation system to neutralize magnetic fields in an environment of a magnetically sensitive instrument. A magnetometer is used to sense magnetic field components in the environment and convert them into a signal. The signal is filtered to remove frequency components associated with the resonant frequency of the compensation system. The filtered signal is amplified by a signal amplifier and amplified by a power amplifier to generate current to drive a semi-Helmholtz coil disposed in the environment of the instrument. Magnetic fields are produced by the semi-Helmholtz coil which neutralize the sensed magnetic fields. The filter may be implemented using either a low-pass filter or a notch filter with notch frequencies set to the resonant frequency and harmonics thereof.